Heng-Tung Hsu

2023

A 20-W wideband voltage controlled attenuator for millimeter-wave applications

Wang, Y., Hsu, H. T. & Tsao, Y. F., 2023, (Accepted/In press) 於: International Journal of Circuit Theory and Applications.

研究成果: Article › 同行評審

A Tall Gate Stem GaN HEMT with Improved Power Density and Efficiency at Ka-Band

Lee, P. H., Lin, Y. C., Hsu, H. T., Tsao, Y. F., Dee, C. F., Su, P. & Chang, E. Y., 2023, (Accepted/In press) 於: IEEE Journal of the Electron Devices Society. p. 1 1 p.

研究成果: Article › 同行評審

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Design of a Compact RF Front-End Transceiver Module for 5G New-Radio Applications

Wang, Y., Hsu, H. T., Desai, A. & Tsao, Y. F., 2023, 於: IEEE Transactions on Instrumentation and Measurement. 72, 2000409.

研究成果: Article › 同行評審

Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications

Hieu, L. T., Hsu, H. T., Chiang, C. H., Panda, D., Lee, C. T., Lin, C. H. & Chang, E. Y., 2月 2023, 於: Semiconductor Science and Technology. 38, 2, 025006.

研究成果: Article › 同行評審

High power handling GaAs SP4T Switch-based Beam-Switching planar antenna module for 5G New-Radio FR2 applications

Tsao, Y. F., Hsu, H. T. & Desai, A., 2月 2023, 於: AEU - International Journal of Electronics and Communications. 159, 154494.

研究成果: Article › 同行評審

2022

A Normally-Off GaN MIS-HEMT Fabricated Using Atomic Layer Etching to Improve Device Performance Uniformity for High Power Applications

Yang, T. Y., Huang, H. Y., Liang, Y. K., Wu, J. S., Kuo, M. Y., Chang, K. P., Hsu, H. T. & Chang, E. Y., 1 10月 2022, 於: Ieee Electron Device Letters. 43, 10, p. 1629-1632 4 p.

研究成果: Article › 同行評審

A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer

Weng, Y. C., Lin, Y. C., Hsu, H. T., Kao, M. L., Huang, H. Y., Ueda, D., Ha, M. T. H., Yang, C. Y., Maa, J. S., Chang, E. Y. & Dee, C. F., 1 2月 2022, 於: Materials. 15, 3, p. 1-10 10 p., 703.

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2 引文斯高帕斯（Scopus）

Dual-Band and Dual-Polarization CPW Fed MIMO Antenna for Fifth-Generation Mobile Communications Technology at 28 and 38 GHz

Tsao, Y. F., Desai, A. & Hsu, H. T., 2022, 於: IEEE Access. 10, p. 46853-46863 11 p.

研究成果: Article › 同行評審

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4 引文斯高帕斯（Scopus）

Dual-Band Power Amplifier Design at 28/38 GHz for 5G New Radio Applications

Tsao, Y. F., Hsu, H. S., Wurfl, J. & Hsu, H. T., 2022, 於: IEEE Access. 10, p. 77826-77836 11 p.

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2 引文斯高帕斯（Scopus）

Effect of the Indium Compositions in Tri-Gate In_xGa_1−xAs HEMTs for High-Frequency Low Noise Application

Wang, C., Kuo, C. N., Lin, Y. C., Hsu, H. T., Tsao, Y. F., Lee, C. T. & Chang, E. Y., 11月 2022, 於: ECS Journal of Solid State Science and Technology. 11, 11, 115006.

研究成果: Article › 同行評審

Interconnected CPW Fed Flexible 4-Port MIMO Antenna for UWB, X, and Ku Band Applications

Desai, A., Kulkarni, J., Kamruzzaman, M. M., Hubalovsky, S., Hsu, H. T. & Ibrahim, A. A., 2022, 於: IEEE Access. 10, p. 57641-57654 14 p.

研究成果: Article › 同行評審

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12 引文斯高帕斯（Scopus）

Optimization of Forward and Reverse Electrical Characteristics of GaN-on-Si Schottky Barrier Diode Through Ladder-Shaped Hybrid Anode Engineering

Yang, C. Y., Wu, J. H., Chung, C. H., You, J. Y., Yu, T. C., Ma, C. J., Lee, C. T., Ueda, D., Hsu, H. T. & Chang, E. Y., 1 12月 2022, 於: IEEE Transactions on Electron Devices. 69, 12, p. 6644-6649 6 p.

研究成果: Article › 同行評審

Rigorous Analysis and Investigation of the Bandwidth Broadening Mechanism in a Compact Power Divider With Physical Port Isolation

Desai, A., Tsao, Y. F., Chang, T. J. & Hsu, H. T., 2022, 於: IEEE Access. 10, p. 133655-133662 8 p.

研究成果: Article › 同行評審

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Sub-10 nm Top Width Nanowire InGaAs Gate-All-Around MOSFETs with Improved Subthreshold Characteristics and Device Reliability

Ko, H. L., Luc, Q. H., Huang, P., Wu, J. Y., Chen, S. M., Tran, N. A., Hsu, H. T. & Chang, E. Y., 8 2月 2022, 於: IEEE Journal of the Electron Devices Society. 10, p. 188-191 4 p.

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5 引文斯高帕斯（Scopus）

The Impact of Hot Carrier Injection-Induced Device Degradation for Lower-Power FinFETs

Chen, Y. L., Yeh, W-K., Hsu, H. T., Chen, K. H., Lien, D. H., Lin, W. C., Yu, T. H., Chiu, Y. S., Godwinraj, D., Godfrey, D. & Wu, C. H., 2022, (Accepted/In press) 於: Journal of Electronic Materials.

研究成果: Article › 同行評審

2021

Adoption of the wet surface treatment technique for the improvement of device performance of enhancement-mode algan/gan moshemts for millimeter-wave applications

Wang, C., Chen, Y. C., Hsu, H. T., Tsao, Y. F., Lin, Y. C., Dee, C. F. & Chang, E. Y., 1 11月 2021, 於: Materials. 14, 21, p. 1-10 10 p., 6558.

研究成果: Article › 同行評審

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1 引文斯高帕斯（Scopus）

An automatic platform based on nanostructured microfluidic chip for isolating and identification of circulating tumor cells

Jou, H. J., Chou, L. Y., Chang, W. C., Ho, H. C., Zhang, W. T., Ling, P. Y., Tsai, K. H., Chen, S. H., Chen, T. H., Lo, P. H., Chen, M. & Hsu, H. T., 5月 2021, 於: Micromachines. 12, 5, p. 1-14 14 p., 473.

研究成果: Article › 同行評審

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14 引文斯高帕斯（Scopus）

Compact phase shifter using arbitrary length of two coupled transmission lines

Chang, T-J., Pande, K. P., Huang, T-J. & Hsu, H-T., 23 3月 2021, (E-pub ahead of print) 於: IET Circuits, Devices and Systems. 15, 5, p. 403-414 12 p.

研究成果: Article › 同行評審

2020

A 52-58 GHz Power Amplifier with 18.6-dBm Saturated Output Power for Space Applications

Tsao, Y. F. & Hsu, H. T., 2020, (Accepted/In press) 於: IEEE Transactions on Circuits and Systems I: Regular Papers. 68, 6, p. 1927-1931 5 p.

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

Bandwidth Improvement of Conventional Dual-Band Power Divider Using Physical Port Separation Structure

Chang, T. J., Tsao, Y. F., Huang, T. J. & Hsu, H-T., 12月 2020, 於: Electronics (Switzerland). 9, 12, p. 1-11 11 p., 2192.

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

Bandwidth improvement of mmic single-pole-double-throw passive hemt switches with radial stubs in impedance-transformation networks

Tsao, Y. F., Würfl, J. & Hsu, H-T., 5 2月 2020, 於: Electronics (Switzerland). 9, 2, p. 1-12 12 p., 270.

研究成果: Article › 同行評審

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5 引文斯高帕斯（Scopus）

Compact low-noise power amplifier design and implementation for millimetre wave frequencies

Tsao, C. M., Tsao, Y. F., Lin, T. S., Huang, T. J. & Hsu, H. T., 1 10月 2020, 於: IET Circuits, Devices and Systems. 14, 7, p. 1026-1031 6 p.

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

Enhancement of electron transport properties of InAlGaN/AlN/GaN HEMTs on silicon substrate with GaN insertion layer

Kao, M. L., Ha, M. T. H., Lin, Y., Weng, Y. C., Hsu, H-T. & Chang, E. Y., 1 6月 2020, 於: Applied Physics Express. 13, 6, p. 1-5 5 p., 065501.

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

Gallium nitride (gan) high-electron-mobility transistors with thick copper metallization featuring a power density of 8.2 w/mm for ka-band applications

Lin, Y. C., Chen, S. H., Lee, P. H., Lai, K. H., Huang, T. J., Chang, E. Y. & Hsu, H. T., 2月 2020, 於: Micromachines. 11, 2, p. 1-11 11 p., 222.

研究成果: Article › 同行評審

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12 引文斯高帕斯（Scopus）

Novel low-cost power divider for 5.8 GHz

Chang, T. J., Pande, K. P. & Hsu, H-T., 4月 2020, 於: Electronics (Switzerland). 9, 4, p. 1-9 9 p., 699.

研究成果: Article › 同行評審

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Study of E-Mode AlGaN/GaN MIS-HEMT with La-silicate Gate Insulator for Power Applications

Huang, K. N., Lin, Y. C., Lin, J. C., Hsu, C. C., Lee, J. H., Wu, C. H., Yao, J. N., Hsu, H-T., Nagarajan, V., Kakushima, K., Tsutsui, K., Iwai, H., Chien, C-H. & Chang, E. Y., 2月 2020, 於: Journal of Electronic Materials. 49, 2, p. 1348-1353 6 p.

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

2019

Communication—Potential of the π-gate InAs HEMTs for high-speed and low-power logic applications

Yao, J. N., Lin, Y. C., Wong, Y. C., Huang, T. J., Hsu, H-T., Sze, S. M. & Chang, E. Y., 7 6月 2019, 於: ECS Journal of Solid State Science and Technology. 8, 6, p. P319-P321 3 p.

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

Evaluation of an InAs HEMT with source-connected field plate for high-speed and low-power logic applications

Yao, J. N., Lin, Y. C., Lin, M. S., Huang, T. J., Hsu, H-T., Sze, S. M. & Chang, E. Y., 1 7月 2019, 於: Solid-State Electronics. 157, p. 55-60 6 p.

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

2018

Evaluation of a 100-nm Gate Length E-Mode InAs High Electron Mobility Transistor with Ti/Pt/Au Ohmic Contacts and Mesa Sidewall Channel Etch for High-Speed and Low-Power Logic Applications

Yao, J. N., Lin, Y. C., Hsu, H-T., Yang, K. C., Hsu, H. H., Sze, S. M. & Chang, E. Y., 4 7月 2018, 於: IEEE Journal of the Electron Devices Society. 6, p. 797-802 6 p., 8404134.

研究成果: Article › 同行評審

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3 引文斯高帕斯（Scopus）

2017

Effect of surface passivation on the electrical performance of AlGaN/GaN high-electron-mobility transistors with slant field plates fabricated using deep-UV lithography

Huang, L. C., Chang, C. H., Lin, Y. C. & Hsu, H-T., 1 1月 2017, 於: Physica Status Solidi (C) Current Topics in Solid State Physics. 14, 1-2, 1600230.

研究成果: Article › 同行評審

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1 引文斯高帕斯（Scopus）

High-performance GaN MOSHEMTs fabricated with ALD Al2O3 dielectric and NBE gate recess technology for high frequency power applications

Lin, Y. K., Noda, S., Huang, C. C., Lo, H. C., Wu, C. H., Luc, Q. H., Chang, P. C., Hsu, H-T., Samukawa, S. & Chang, E. Y., 1 6月 2017, 於: IEEE Electron Device Letters. 38, 6, p. 771-774 4 p., 7906539.

研究成果: Article › 同行評審

20 引文斯高帕斯（Scopus）

Reliability improvement in GaN HEMT power device using a field plate approach

Wu, W. H., Lin, Y. C., Chin, P. C., Hsu, C. C., Lee, J. H., Liu, S. C., Maa, J-S., Iwai, H., Chang, E. Y. & Hsu, H-T., 1 7月 2017, 於: Solid-State Electronics. 133, p. 64-69 6 p.

研究成果: Article › 同行評審

18 引文斯高帕斯（Scopus）

2016

A 60-nm-thick enhancement mode In_0.65Ga_0.35As/InAs/In_0.65Ga_0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications

Fatah, F. A., Lin, Y. C., Liu, R. X., Yang, K. C., Lin, T. W., Hsu, H-T., Yang, J. H., Miyamoto, Y., Iwai, H., Hu, C-M., Salahuddin, S. & Chang, E. Y., 1 2月 2016, 於: Applied Physics Express. 9, 2, 026502.

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

AlGaN/GaN HEMTs with Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications

Lin, Y. K., Noda, S., Lo, H. C., Liu, S. C., Wu, C. H., Wong, Y. Y., Luc, Q. H., Chang, P. C., Hsu, H-T., Samukawa, S. & Chang, E. Y., 1 11月 2016, 於: IEEE Electron Device Letters. 37, 11, p. 1395-1398 4 p., 7569098.

研究成果: Article › 同行評審

10 引文斯高帕斯（Scopus）

Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La₂O₃/SiO₂ gate dielectric

Hsu, C. H., Shih, W. C., Lin, Y. C., Hsu, H-T., Hsu, H. H., Huang, Y. X., Lin, T. W., Wu, C. H., Wu, W. H., Maa, J. S., Iwai, H., Kakushima, K. & Chang, E. Y., 4月 2016, 於: Japanese journal of applied physics. 55, 4, 04EG04.

研究成果: Article › 同行評審

10 引文斯高帕斯（Scopus）

Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs by Strain Engineering Design

Tsai, S. P., Hsu, H-T., Wuerfl, J. & Chang, E. Y., 1 10月 2016, 於: IEEE Transactions on Electron Devices. 63, 10, p. 3876-3881 6 p., 7534734.

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

2015

Influence of AlN buffer layer thickness on material and electrical properties of InAlN/GaN high-electron-mobility transistors

Huang, W. C., Liu, K. S., Wong, Y. Y., Hsieh, C. F., Chang, E. Y. & Hsu, H-T., 1 7月 2015, 於: Japanese journal of applied physics. 54, 7, 071001.

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

Investigation of electrical and thermal properties of multiple AlGaN/GaN high-electron-mobility transistors flip-chip packaged in parallel for power electronics

Tsai, S. P., Hsu, H-T., Tu, Y. Y. & Chang, E. Y., 1 3月 2015, 於: Applied Physics Express. 8, 3, 034101.

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

Potential of enhancement mode In_0.65Ga_0.35As/InAs/In_0.65Ga_0.35As HEMTs for using in high-speed and low-power logic applications

Fatah, F. A., Lin, Y. C., Lee, T. Y., Yang, K. C., Liu, R. X., Chan, J. R., Hsu, H-T., Miyamoto, Y. & Chang, E. Y., 1 1月 2015, 於: ECS Journal of Solid State Science and Technology. 4, 12, p. N157-N159

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

Terahertz negative refraction in a high-temperature superconducting material

Wu, M. R., Hsu, H-T., Wu, C. J. & Chang, S. J., 1 3月 2015, 於: IEEE Transactions on Terahertz Science and Technology. 5, 2, p. 230-235 6 p., 7008526.

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

Thickness-dependent transmission in a finite photonic crystal containing nearly ferroelectric superconductor

Hsu, H-T. & Wu, C. J., 1 3月 2015, 於: IEEE Journal of Selected Topics in Quantum Electronics. 21, 2, 6880822.

研究成果: Article › 同行評審

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1 引文斯高帕斯（Scopus）

2014

A x 2 dual-band antenna array for Radio-Frequency Identification (RFID) handheld reader applications

Hsu, H-T. & Huang, T. J., 1 10月 2014, 於: IEEE Transactions on Antennas and Propagation. 62, 10, p. 5260-5267 8 p., 2340897.

研究成果: Article › 同行評審

16 引文斯高帕斯（Scopus）

Frequency Response of a Ferroelectric Material in Double-Negative Region

Wu, M. R., Hsu, H-T., Wu, C. J. & Chang, S. J., 1 10月 2014, 於: IEEE Photonics Journal. 6, 5, 2201711.

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Investigation of the flip-chip package with BCB underfill for W-band applications

Wang, C. T., Hsu, L. H., Wu, W. C., Hsu, H-T., Chang, E. Y., Hu, Y. C., Lee, C. T. & Tsai, S. P., 1 1月 2014, 於: IEEE Microwave and Wireless Components Letters. 24, 1, p. 11-13 3 p., 6665105.

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

Monolithic wideband linear power amplifier with 45% power bandwidth using pseudomorphic high-electron-mobility transistors for long-term evolution application

Chiang, C. Y., Hsu, H-T. & Chang, E. Y., 1 11月 2014, 於: Japanese journal of applied physics. 53, 11, 110311.

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

Performance enhancement of flip-chip packaged AlGaN/GaN HEMTs using active-region bumps-induced piezoelectric effect

Tsai, S. P., Hsu, H-T., Chiang, C. Y., Tu, Y. Y., Chang, C. H., Hsieh, T. E., Wang, H. C., Liu, S. C. & Chang, E. Y., 1 1月 2014, 於: IEEE Electron Device Letters. 35, 7, p. 735-737 3 p., 6823098.

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

2013

A koch-shaped log-periodic dipole array (LPDA) antenna for universal ultra-high-frequency (UHF) radio frequency identification (RFID) handheld reader

Hsu, H-T. & Huang, T. J., 1 1月 2013, 於: IEEE Transactions on Antennas and Propagation. 61, 9, p. 4852-4856 5 p., 6517871.

研究成果: Article › 同行評審

56 引文斯高帕斯（Scopus）

Antenna miniaturisation and broadband design via a decomposition of structure into conjugated elemental antennas for natural impedance matching

Chou, H. T., Chao, T. C., Hsu, H-T., Kuo, L. R. & Kuo, F. Y., 17 12月 2013, 於: IET Microwaves, Antennas and Propagation. 7, 15, p. 1238-1246 9 p.

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

Assessment of thermal impact on performance of metamorphic high-electron-mobility transistors on polymer substrates using flip-chip-on-board technology

Wang, C. T., Hsu, H-T., Chiang, C. Y., Chang, E. Y. & Lim, W. C., 1 12月 2013, 於: Applied Physics Express. 6, 12, 126701.

研究成果: Article › 同行評審

InAs thin-channel high-electron-mobility transistors with very high current-gain cutoff frequency for emerging submillimeter-wave applications

Chang, E. Y., Kuo, C. I., Hsu, H-T., Chiang, C. Y. & Miyamoto, Y., 1 3月 2013, 於: Applied Physics Express. 6, 3, 034001.

研究成果: Article › 同行評審

108 引文斯高帕斯（Scopus）

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