每年研究成果
每年研究成果
- 9結果
搜尋結果
-
2021
Effect of Annealing Temperature on Ferroelectric Properties of ALD Deposited TiN/HZO/TiN Capacitor
Lin, J.-W., Lin, J.-W., Wu, J.-S., Su, C.-J., Chang, E. Y. & Lin, C.-H., 10月 2021.研究成果: Paper › 同行評審
-
2018
Study of the mesa etched tri-gate InAs HEMTs with extremely low SS for low-power logic applications
Lin, Y. C., Yao, J. N., Hsu, H. H., Wong, Y. C., Huang, C. Y., Hsu, H.-T., Iwai, H. & Chang, E. Y., 29 5月 2018, p. 1-3. 3 p.研究成果 › 同行評審
3 引文 斯高帕斯（Scopus） -
2005
Multi-energy oxygen ion implantation isolation for AlGaN/GaN HEMTs
Shiu, J. Y., Shoau, Y. S., Huang, J. C., Hsieh, Y. C., Chang, C. T., Lu, C. Y. & Chang, E. Y., 5月 2005, p. 296-300. 5 p.研究成果: Paper › 同行評審
-
2004
Growth of high-quality GaAs epitaxial layers on Si substrite by using a novel GeSi buffer strucuture
Chang, E. Y., Luo, G. & Yang, T. H., 5月 2004, p. 95-99. 5 p.研究成果: Paper › 同行評審
-
2001
2.4 V-operated enhancement-mode power PHEMTs for personal handy-phone system application
Chen, S. H., Chang, E. Y., Lin, Y. C. & Lee, C. S., 2001, p. 127-129. 3 p.研究成果: Paper › 同行評審
-
2000
1.2-volt operation power PHEMT for personal handy phone handset application
Chang, E. Y., Lee, D. H. & Chen, S. H., 3 12月 2000, p. 185-188. 4 p.研究成果: Paper › 同行評審
-
1999
GaAs power MESFET's fabricated by ion implantation technology for 2.4-GHz wireless LAN applications
Lai, Y. L., Chang, E. Y., Chang, C. Y., Liu, D. G., Her, M. L., Shiau, M. S., Yang, S. Y. & Chuang, K. C., 26 6月 1999, p. 144-147. 4 p.研究成果: Paper › 同行評審
-
1997
High-performance pseudomorphic power HEMTs for low-voltage wireless communication applications
Lai, Y. L., Chang, E. Y., Chang, C. Y., Liu, T. H. & Wang, S. P., 26 11月 1997, p. 225-228. 4 p.研究成果: Paper › 同行評審
1 引文 斯高帕斯（Scopus） -
1989
Monolithic V-band pseudomorphic-MODFET low-noise amplifier
Metze, G., Cornfeld, A., Singer, J., Carlson, H., Chang, E. Y., Kirkendall, T., Dahrooge, G., Bass, J., Hung, H. L. & Lee, T., 1 6月 1989, p. 111-116. 6 p.研究成果: Paper › 同行評審
4 引文 斯高帕斯（Scopus）