跳至主導覽
跳至搜尋
跳過主要內容
國立陽明交通大學研發優勢分析平台 首頁
English
中文
首頁
人員
單位
研究成果
計畫
獎項
活動
貴重儀器
影響
按專業知識、姓名或所屬機構搜尋
查看斯高帕斯 (Scopus) 概要
張 翼
教授級教學研究教師
材料科學與工程學系
智慧半導體奈米系統技術研究中心
https://orcid.org/0000-0003-1616-5240
電話
03-5712121#31536/31421
電子郵件
edc
nycu.edu
tw
網站
https://csdlab.web.nycu.edu.tw/
h-index
h10-index
h5-index
5846
引文
32
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
2503
引文
24
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1069
引文
16
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1988 …
2025
每年研究成果
概覽
指紋
網路
計畫
(79)
研究成果
(701)
獎項
(3)
活動
(3)
類似的個人檔案
(9)
指紋
查看啟用 Edward Yi Chang 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Material Science
Transistor
100%
Electron Mobility
92%
Gallium Arsenide
58%
Film
42%
Aluminum Nitride
38%
Density
37%
Indium Gallium Arsenide
33%
Heterojunction
30%
Capacitor
28%
Oxide Semiconductor
26%
Metal Oxide
25%
Al2O3
23%
Dielectric Material
23%
Surface (Surface Science)
23%
Ferroelectric Material
21%
Buffer Layer
20%
Oxide Compound
20%
Chemical Vapor Deposition
18%
Electrical Property
17%
Metal-Organic Chemical Vapor Deposition
17%
Capacitance
15%
Silicon
15%
Sapphire
14%
Field Effect Transistor
14%
Annealing
13%
Nanowire
12%
Schottky Barrier
12%
Silicon Nitride
12%
Solar Cell
12%
Indium
11%
Metal-Oxide-Semiconductor Field-Effect Transistor
10%
Composite Material
10%
Epitaxial Film
9%
Electronic Circuit
9%
Thermal Stability
9%
Aluminium Gallium Arsenide
9%
Molecular Beam Epitaxy
9%
Thin Films
8%
Transmission Electron Microscopy
8%
Contact Resistance
8%
Surface Morphology
8%
Epilayers
8%
Phase Composition
7%
Materials Property
7%
Nitride Compound
7%
Thin-Film Transistor
7%
Epitaxy
6%
Power Device
6%
Monolayers
6%
Surface Roughness
6%
Keyphrases
GaN HEMT
92%
AlGaN-GaN
58%
High Electron Mobility Transistor
58%
Gallium Arsenide
53%
Metal-organic Chemical Vapor Deposition (MOCVD)
39%
InGaAs
32%
Si Substrate
30%
Enhancement-mode (E-mode)
26%
Aluminum Oxide
25%
GaN MIS-HEMT
23%
HfO2
23%
Electrical Characteristics
23%
Ohmic Contact
18%
GaAs Substrate
18%
InP HEMT
18%
Metamorphic High Electron Mobility Transistor (mHEMT)
18%
High Performance
17%
Metal-oxide-semiconductor Capacitor (MOSCAP)
17%
Device Performance
17%
Annealing
17%
InGaP
16%
GaSb
15%
Electrical Properties
15%
Metal-insulator-semiconductor
14%
Threshold Voltage
13%
Buffer Layer
13%
Transconductance
12%
Flip chip
12%
Low Noise
12%
Silicon Nitride
12%
RF Performance
12%
Transistor Device
11%
Gate Length
11%
Metallized
11%
On-resistance
11%
Heterostructure
11%
Breakdown Voltage
11%
Aluminum Gallium Nitride (AlGaN)
11%
Power Added Efficiency
10%
MESFET
10%
Drain Current
10%
Logic Application
10%
MOSFET
10%
AlN Buffer Layer
10%
Device Application
10%
Ka-band
10%
Gate Dielectric
10%
GaN-on-Si
10%
Power Output
10%
Band Application
9%
Engineering
Gallium Arsenide
55%
Indium Gallium Arsenide
46%
Nitride
27%
Metal Oxide Semiconductor
26%
Heterojunctions
26%
Cutoff Frequency
25%
Breakdown Voltage
23%
Current Drain
22%
Device Performance
19%
Si Substrate
19%
Solar Cell
19%
Output Power
18%
Metal-Oxide-Semiconductor Field-Effect Transistor
17%
Dielectrics
17%
Chemical Vapor Deposition
17%
Gate Length
16%
Noise Figure
15%
Vapor Deposition
15%
Gaas Substrate
15%
Power Added Efficiency
15%
Ohmic Contacts
14%
Current Gain
14%
Atomic Layer Deposition
14%
Gate Stack
14%
Metallizations
14%
Buffer Layer
14%
Passivation
14%
Metal Organic Chemical Vapor Deposition
14%
Drain Bias
13%
Gate Dielectric
13%
Power Density
13%
Interconnects
13%
Field-Effect Transistor
12%
Diffusion Barrier
12%
Nanowire
11%
Max
11%
Power Device
11%
Field Effect Transistor
11%
Barrier Layer
11%
Schottky Barrier
11%
Aluminium Gallium Arsenide
11%
Millimeter Wave
11%
Application Logic
9%
Annealing Temperature
9%
Radio Frequency
9%
Ka-Band
9%
Monolithic Microwave Integrated Circuits
9%
Gate Bias
9%
Thin-Film Transistor
9%
Quantum Well
9%
