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查看斯高帕斯 (Scopus) 概要
連 德軒
副教授
電子研究所
https://orcid.org/0000-0001-6774-2074
h-index
h10-index
h5-index
12839
引文
46
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
10264
引文
36
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1116
引文
12
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
2006
2025
每年研究成果
概覽
指紋
網路
計畫
(3)
研究成果
(113)
類似的個人檔案
(6)
指紋
查看啟用 Der-Hsien Lien 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Material Science
Annealing
13%
Carbon Nanotube
38%
Carrier Concentration
18%
Chemical Vapor Deposition
10%
Defect Density
10%
Density
23%
Dielectric Material
15%
Electroluminescence
36%
Electron Mobility
15%
Electronic Circuit
47%
Electronic Component
12%
Field Effect Transistor
17%
Film
22%
Glass Fiber
8%
Heterojunction
46%
Indium
22%
Indium Tin Oxide
8%
Layered Semiconductor
8%
Light-Emitting Diode
30%
Lithography
8%
Metal Oxide
22%
Monolayers
100%
Nanodevice
13%
Nanoparticle
17%
Nanorod
11%
Nanostructure
15%
Nanostructured Material
13%
Nanowire
79%
Optical Property
14%
Oxide Compound
35%
Oxide Semiconductor
19%
Photoluminescence
53%
Photovoltaics
9%
Piezoelectricity
11%
Quantum Dot
11%
Resistive Random-Access Memory
11%
Resonator
8%
Schottky Barrier
18%
Silicon
32%
Solar Cell
27%
Surface (Surface Science)
68%
Thermal Stability
25%
Thin Films
39%
Titanium Dioxide
13%
Titanium Oxide
11%
Transistor
51%
Transition Metal Dichalcogenide
62%
Two-Dimensional Material
48%
Zinc Oxide
11%
ZnO
68%
Keyphrases
2D Semiconductors
21%
Carbon Nanotubes
36%
Core-shell Nanowires
16%
Defect Density
16%
Device-independent
16%
Difluoromethane
15%
Edge Recombination
16%
Electroluminescence
33%
Energy Harvesting
15%
Harsh Electronics
18%
Harsh Environment
30%
High Performance
19%
Indium Oxide
22%
Light Harvesting
14%
Light-emitting Devices
26%
Light-emitting Diodes
30%
Metal-semiconductor-metal Photodetector
22%
Molybdenite
49%
Monolayer MoS2
16%
Monolayer Semiconductors
28%
Monolayer WS2
37%
MoS2 Monolayer
15%
Multi-walled Carbon Nanotubes (MWCNTs)
22%
Nanostructures
27%
Nanowire Photodetectors
18%
Nonradiative Recombination
16%
Optoelectronic Applications
16%
Order of Magnitude
14%
Photodetector
66%
Photogain
28%
Photoluminescence Quantum Yield
37%
Pulse Injection
17%
Recovery Speed
16%
Resistive Random Access Memory (ReRAM)
21%
Responsivity
14%
Room Temperature
15%
Semiconductors
18%
Solar Cell
19%
Superacid
16%
Threshold Voltage
16%
Transistor
18%
Transition Metal Dichalcogenide Monolayer
17%
Transition Metal Dichalcogenides
38%
Two Dimensional
17%
Two Dimensional Materials
41%
Ultrafast
15%
Ultrathin
19%
UV Photodetector
20%
WSe2
34%
ZnO Nanowires
21%
Engineering
2D Material
13%
Band Bending
15%
Band Gap
15%
Carbon Nanotube
53%
Carrier Concentration
8%
Channel Device
8%
Channel Length
8%
Core-Shell
16%
Crystallinity
8%
Defect Density
8%
Emitting Device
18%
Field-Effect Transistor
12%
Heterojunctions
15%
Light Absorption
10%
Light-Emitting Diode
20%
Low-Temperature
10%
Luminaires
29%
Manufacturing Process
8%
Metal Contact
11%
Molybdenum Disulfide
16%
Monolayers
19%
Nanomaterial
18%
Nanoparticle
16%
Nanorod
11%
Nanoscale
16%
Nanotube
10%
Nanowire
51%
Optoelectronics
50%
Oxide Semiconductor
8%
Photocurrent
11%
Photodetector
22%
Photometer
72%
Photovoltaics
12%
Quantum Well
11%
Quantum Yield
9%
Resistive
11%
Resonator
8%
Response Time
10%
Responsivity
13%
Self-Powered
11%
Shell Nanowires
16%
Silicon Dioxide
12%
Single-Walled Carbon Nanotube
14%
Solar Cell
24%
Surface Effect
11%
Thin Films
23%
Transition Metal Dichalcogenide
32%
Two Dimensional
16%
Wearable Electronics
9%
Wearable Sensor
8%
