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查看斯高帕斯 (Scopus) 概要
連 德軒
副教授
電子研究所
https://orcid.org/0000-0001-6774-2074
h-index
h10-index
h5-index
14195
引文
47
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
9299
引文
34
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
864
引文
10
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
2006
2025
每年研究成果
概覽
指紋
網路
計畫
(3)
研究成果
(115)
類似的個人檔案
(6)
指紋
查看啟用 Der-Hsien Lien 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Material Science
Monolayers
100%
Nanowire
77%
ZnO
66%
Surface (Surface Science)
66%
Transition Metal Dichalcogenide
60%
Photoluminescence
52%
Transistor
49%
Two-Dimensional Material
47%
Electronic Circuit
45%
Heterojunction
45%
Thin Films
38%
Carbon Nanotube
37%
Electroluminescence
35%
Oxide Compound
34%
Silicon
31%
Light-Emitting Diode
29%
Solar Cell
26%
Density
25%
Thermal Stability
24%
Metal Oxide
21%
Indium
21%
Film
21%
Oxide Semiconductor
19%
Carrier Concentration
18%
Schottky Barrier
18%
Nanoparticle
17%
Field Effect Transistor
17%
Electron Mobility
15%
Nanostructure
14%
Dielectric Material
14%
Optical Property
13%
Titanium Dioxide
13%
Annealing
12%
Nanostructured Material
12%
Nanodevice
12%
Chemical Vapor Deposition
12%
Electronic Component
11%
Piezoelectricity
11%
Nanorod
10%
Quantum Dot
10%
Resistive Random-Access Memory
10%
Zinc Oxide
10%
Titanium Oxide
10%
Defect Density
10%
Photovoltaics
9%
Glass Fiber
8%
Lithography
8%
Resonator
8%
Layered Semiconductor
8%
Indium Tin Oxide
8%
Keyphrases
Photodetector
64%
Molybdenite
48%
Two Dimensional Materials
39%
WSe2
39%
Transition Metal Dichalcogenides
37%
Photoluminescence Quantum Yield
36%
Monolayer WS2
36%
Carbon Nanotubes
35%
Electroluminescence
32%
Light-emitting Diodes
29%
Harsh Environment
29%
Photogain
28%
Monolayer Semiconductors
27%
Nanostructures
26%
Light-emitting Devices
25%
High Performance
23%
Metal-semiconductor-metal Photodetector
21%
Multi-walled Carbon Nanotubes (MWCNTs)
21%
Indium Oxide
21%
2D Semiconductors
20%
ZnO Nanowires
20%
Resistive Random Access Memory (ReRAM)
20%
UV Photodetector
19%
Ultrathin
19%
Solar Cell
18%
Transistor
18%
Nanowire Photodetectors
18%
Harsh Electronics
17%
Threshold Voltage
17%
Semiconductors
17%
Pulse Injection
17%
2D Materials
17%
Two Dimensional
16%
Transition Metal Dichalcogenide Monolayer
16%
Optoelectronic Applications
16%
Defect Density
16%
Edge Recombination
16%
Core-shell Nanowires
16%
Superacid
16%
Recovery Speed
15%
Device-independent
15%
Nonradiative Recombination
15%
Monolayer MoS2
15%
Energy Harvesting
14%
Ultrafast
14%
MoS2 Monolayer
14%
Difluoromethane
14%
Room Temperature
14%
Responsivity
14%
Light Harvesting
14%
Engineering
Photometer
75%
Carbon Nanotube
51%
Nanowire
50%
Optoelectronics
50%
Transition Metal Dichalcogenide
31%
Luminaires
29%
Thin Films
28%
Solar Cell
24%
Photodetector
21%
Monolayers
21%
Light-Emitting Diode
19%
Emitting Device
18%
Nanomaterial
18%
Nanoscale
16%
Core-Shell
16%
Shell Nanowires
16%
Molybdenum Disulfide
16%
Two Dimensional
16%
Nanoparticle
15%
Band Gap
15%
Heterojunctions
15%
Band Bending
14%
Single-Walled Carbon Nanotube
13%
Crystallinity
13%
Responsivity
13%
Response Time
12%
2D Material
12%
Field-Effect Transistor
12%
Silicon Dioxide
12%
Photovoltaics
11%
Photocurrent
11%
Self-Powered
11%
Nanorod
10%
Resistive
10%
Quantum Well
10%
Surface Effect
10%
Metal Contact
10%
Nanotube
10%
Low-Temperature
10%
Realization
9%
Light Absorption
9%
Wearable Electronics
9%
Quantum Yield
9%
Channel Device
8%
Recovery Time
8%
Carrier Concentration
8%
Defect Density
8%
Resonator
8%
Manufacturing Process
8%
Wearable Sensor
8%
