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國立陽明交通大學研發優勢分析平台 首頁
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查看斯高帕斯 (Scopus) 概要
林 俊良
副教授
電子物理學系
新世代功能性物質研究中心
智慧半導體奈米系統技術研究中心
https://orcid.org/0000-0001-8781-3650
h-index
h10-index
h5-index
2105
引文
18
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
561
引文
13
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
318
引文
10
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
2006
2025
每年研究成果
概覽
指紋
網路
計畫
(5)
研究成果
(81)
獎項
(1)
類似的個人檔案
(6)
指紋
查看啟用 Chun-Liang Lin 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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Keyphrases
(111) Surface
18%
Ablation Zone
13%
Ag(111)
44%
Ag-Ge
56%
Alq3
11%
Alq3 Molecule
13%
Annealing
14%
Annealing Treatment
9%
Au(111)
9%
CO 2
10%
Co Islands
18%
Cobalt
8%
Color Purity
13%
Cu(111)
15%
Cu(111) Surface
8%
Defect Density
11%
Density Functional Calculations
20%
Distributed Bragg Reflector
26%
Electronic States
12%
Electronic Structure
33%
Energy Transfer
13%
Ge(111)
53%
Geometric Structure
13%
High Performance
9%
Indium Gallium Nitride (InGaN)
38%
Island Growth
9%
Low Energy Electron Diffraction
22%
Micro-light-emitting Diodes (micro-LEDs)
25%
Molybdenite
9%
Monolayer Silicene
9%
Nanoislands
8%
Nanosize
10%
Oscillation
13%
PtTe2
11%
Pump-probe Spectroscopy
13%
Quantum Well States
9%
Quasiparticle Interference
11%
Red micro-LED
28%
Scanning Tunneling Microscopy
51%
Scanning Tunneling Spectroscopy
19%
Si(111)
13%
Silicene
45%
Spectroscopy Studies
8%
Thermal Evolution
8%
Topological Materials
8%
Transistor
10%
Transition Metal Dichalcogenides
15%
Two Dimensional
13%
Ultrathin
15%
WTe2
17%
Material Science
Anisotropy
8%
Annealing
10%
Carrier Concentration
5%
Cobalt
8%
Defect Density
7%
Density
35%
Dielectric Material
6%
Dipole-Dipole Interaction
13%
Energy Levels
28%
Ferroelectric Material
17%
Field Effect Transistor
14%
Film
11%
Honeycomb Structure
6%
Layered Material
7%
Light-Emitting Diode
13%
Low-Energy Electron Diffraction
19%
Molybdenum
15%
Monolayers
27%
Nanostructure
8%
Oxide Compound
8%
Scanning Tunneling Microscopy
86%
Semimetals
14%
Superconductivity
8%
Superlattice
13%
Surface (Surface Science)
100%
Surface Defect
5%
Surface Structure
10%
Thermal Stability
6%
Thin Films
13%
Transistor
30%
Transition Metal Dichalcogenide
35%
Tungsten
7%
Two-Dimensional Material
17%
Engineering
Anisotropic
8%
Annealing Temperature
11%
Bragg Cell
26%
Buffer Layer
6%
Carrier Concentration
5%
Clustering Algorithm
13%
Computervision
13%
Defect Density
6%
Electronic State
12%
Energy Electron Diffraction
13%
Energy Levels
8%
Field-Effect Transistor
7%
Ge Substrate
5%
Magnetic Field
10%
Mirror Symmetry
6%
Molybdenum Disulfide
13%
Monolayers
8%
Objective Lens
13%
Optoelectronics
7%
Quantum Well
13%
Remediation
6%
Room Temperature
6%
Scanning Tunneling Microscopy
49%
Search Algorithm
13%
Separability
13%
Shape Transformation
13%
Simulation Result
6%
Surface Defect
6%
Transition Metal Dichalcogenide
13%
Tunnel Construction
7%
Two Dimensional
18%
