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國立陽明交通大學研發優勢分析平台 首頁
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查看斯高帕斯 (Scopus) 概要
林 俊良
副教授
電子物理學系
新世代功能性物質研究中心
智慧半導體奈米系統技術研究中心
https://orcid.org/0000-0001-8781-3650
h-index
h10-index
h5-index
2081
引文
18
h-指數
按照存儲在普爾(Pure)的出版物數量及斯高帕斯(Scopus)引文計算。
541
引文
13
h-指數
按照存儲在普爾(Pure)的出版物數量及斯高帕斯(Scopus)引文計算。
299
引文
9
h-指數
按照存儲在普爾(Pure)的出版物數量及斯高帕斯(Scopus)引文計算。
2006
2024
每年研究成果
概覽
指紋
網路
計畫
(5)
研究成果
(75)
獎項
(1)
類似的個人檔案
(6)
指紋
查看啟用 Chun-Liang Lin 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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Keyphrases
Ag-Ge
57%
Ge(111)
54%
Scanning Tunneling Microscopy
51%
Silicene
46%
Ag(111)
45%
Indium Gallium Nitride (InGaN)
39%
Electronic Structure
34%
Red micro-LED
29%
Distributed Bragg Reflector
27%
Micro-light-emitting Diodes (micro-LEDs)
25%
Low Energy Electron Diffraction
23%
Density Functional Calculations
21%
Scanning Tunneling Spectroscopy
19%
Co Islands
18%
(111) Surface
18%
WTe2
17%
Cu(111)
16%
Annealing
14%
Oscillation
14%
Si(111)
14%
Geometric Structure
13%
Two Dimensional
13%
Ultrathin
13%
Color Purity
13%
Electronic States
12%
Quasiparticle Interference
12%
Defect Density
12%
Transition Metal Dichalcogenides
11%
PtTe2
11%
Nanosize
10%
CO 2
10%
Au(111)
9%
Monolayer Silicene
9%
Quantum Well States
9%
High Performance
9%
Island Growth
9%
Annealing Treatment
9%
Spectroscopy Studies
9%
Thermal Evolution
9%
Topological Materials
9%
Nanoislands
9%
Cobalt
9%
Cu(111) Surface
9%
Photonic-crystal Surface-emitting Laser
9%
Nanoporous
9%
Yellow-green
9%
Mini-LED
9%
Charge Density Wave
9%
Visible Light Communication
9%
Indium Oxide
9%
Material Science
Surface (Surface Science)
100%
Scanning Tunneling Microscopy
86%
Density
36%
Energy Levels
28%
Low-Energy Electron Diffraction
20%
Monolayers
18%
Transition Metal Dichalcogenide
18%
Transistor
18%
Semimetals
14%
Superlattice
13%
Thin Films
13%
Light-Emitting Diode
13%
Two-Dimensional Material
12%
Ferroelectric Material
12%
Film
11%
Surface Structure
10%
Annealing
10%
Cobalt
9%
Superconductivity
9%
Nanostructure
9%
Oxide Compound
9%
Dipole-Dipole Interaction
9%
Defect Density
7%
Layered Material
7%
Tungsten
7%
Molybdenum
7%
Honeycomb Structure
6%
Thermal Stability
6%
Anisotropy
6%
Dielectric Material
6%
Carrier Concentration
5%
Engineering
Scanning Tunneling Microscopy
51%
Bragg Cell
27%
Two Dimensional
18%
Energy Electron Diffraction
13%
Shape Transformation
13%
Quantum Well
13%
Annealing Temperature
11%
Electronic State
11%
Transition Metal Dichalcogenide
9%
Energy Levels
9%
Optoelectronics
7%
Simulation Result
6%
Buffer Layer
6%
Remediation
6%
Surface Defect
6%
Defect Density
6%
Carrier Concentration
6%
Room Temperature
5%
Ge Substrate
5%