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查看斯高帕斯 (Scopus) 概要
林 群雄
教授
國際半導體產業學院
電話
+886-3-5712121#55918
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Chun_lin
nycu.edu
tw
網站
https://nycu-icst-advanced-semiconductor-lab7.webnode.tw/
h-index
h10-index
h5-index
659
引文
14
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
415
引文
10
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
346
引文
9
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1992 …
2025
每年研究成果
概覽
指紋
網路
計畫
(7)
研究成果
(70)
類似的個人檔案
(6)
指紋
查看啟用 Chun-Hsiung Lin 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Keyphrases
GaN HEMT
100%
Metal-organic Chemical Vapor Deposition (MOCVD)
92%
Si Substrate
64%
Ultrathin
62%
Superlattice
55%
Thin-film Transistors
55%
HfO2
47%
Electrical Characteristics
45%
LaNiO3
44%
Atomic Layer Deposited
39%
Ferroelectric Capacitor
39%
Microstructure
38%
Annealing Temperature
36%
AlGaN-GaN
34%
Electrical Properties
33%
Gallium Arsenide
33%
Dielectric Properties
32%
Zirconium Dioxide
32%
Annealing
32%
InGaP
31%
Multiple Quantum Wells
31%
Metal-ferroelectric-metal Capacitor
29%
High Electron Mobility Transistor
27%
Breakdown Voltage
27%
Aluminum Oxide
26%
In Situ
26%
Gas Source Molecular Beam Epitaxy
24%
Growth Temperature
23%
Silicon-on-insulator
23%
GaN-on-Si
23%
GaN MIS-HEMT
23%
HfZrO2
23%
Remanent Polarization
22%
Dielectric Constant
22%
Ferroelectric Properties
21%
Insulator Substrate
20%
Capacitors
19%
Fin Field-effect Transistor (FinFET)
19%
Endurance Performance
19%
Device Characteristics
19%
Interfacial Layer
18%
Heterostructure
18%
InAsP
17%
Hf0.5Zr0.5O2
17%
Laser Driver
17%
Wake-up
17%
Lattice Matching
16%
Interface Traps
16%
Barrier Layer
16%
Enhancement-mode (E-mode)
16%
Material Science
Thin Films
94%
Transistor
86%
Ferroelectric Material
79%
Metal-Organic Chemical Vapor Deposition
69%
Capacitor
68%
Electron Mobility
65%
Superlattice
62%
Silicon
57%
Thin-Film Transistor
52%
Quantum Well
49%
Gallium Arsenide
47%
Heterojunction
46%
Zirconia
38%
Density
38%
Surface (Surface Science)
36%
Electrical Property
34%
Indium
33%
Zinc Oxide
33%
Ferroelectric Thin Films
31%
Dielectric Property
30%
Aluminum Nitride
29%
Dielectric Material
29%
Film
26%
Oxide Compound
25%
Ferroelectricity
25%
Tin
23%
Chemical Vapor Deposition
22%
Capacitance
20%
Al2O3
19%
Surface Roughness
18%
Permittivity
18%
Phase Composition
17%
Field Effect Transistor
17%
Molecular Beam Epitaxy
16%
Transmission Electron Microscopy
15%
Aluminium Gallium Arsenide
15%
Metal-Oxide-Semiconductor Field-Effect Transistor
15%
Oxidation Reaction
15%
Epitaxial Film
15%
Composite Material
15%
Titanium Oxide
15%
Annealing
14%
Oxide Semiconductor
13%
Epitaxy
12%
Electrical Resistivity
12%
Thermal Stability
12%
Indium Gallium Arsenide
12%
Nucleation
11%
Schottky Barrier
11%
X-Ray Diffraction
11%
Engineering
Thin-Film Transistor
70%
Thin Films
69%
Superlattice
62%
Atomic Layer
55%
Quantum Well
53%
Gallium Arsenide
51%
Annealing Temperature
45%
Atomic Layer Deposition
43%
Dielectrics
41%
Metal Organic Chemical Vapor Deposition
35%
Breakdown Voltage
34%
Si Substrate
29%
Channel Length
26%
Ray Diffraction
23%
Heterojunctions
23%
Barrier Layer
22%
Interfacial Layer
20%
Interface Trap
19%
Band Offset
18%
Power Amplifier
18%
Heterostructures
17%
Electric Field
17%
Source Gas
16%
Phase Composition
16%
Silicon on Insulator
15%
Metal-Oxide-Semiconductor Field-Effect Transistor
15%
Aluminium Gallium Arsenide
15%
Assisted Deposition
15%
Passivation Layer
15%
Light Detection and Ranging
15%
Random Access Memory
15%
Oxide Film
15%
Channel Transistor
15%
Nitride
15%
Schottky Barrier
13%
Indium Gallium Arsenide
13%
Conduction Band
12%
Buffer Layer
12%
Oxide Semiconductor
12%
Cutoff Frequency
12%
Incident Angle
11%
Radio Frequency
11%
Current Drain
11%
Repetition Rate
11%
Growth Temperature
11%
Photonics
10%
Heat Losses
10%
Plane Strain
10%
High Electric Field
10%
Deposition System
10%
