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查看斯高帕斯 (Scopus) 概要
林 群雄
教授
國際半導體產業學院
電話
+886-3-5712121#55918
電子郵件
Chun_lin
nycu.edu
tw
網站
https://nycu-icst-advanced-semiconductor-lab7.webnode.tw/
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140
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1992 …
2022
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查看啟用 Chun-Hsiung Lin 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Engineering & Materials Science
Organic chemicals
100%
Semiconductor quantum wells
91%
Thin films
87%
Metals
85%
Chemical vapor deposition
75%
Substrates
74%
Gas source molecular beam epitaxy
70%
High electron mobility transistors
67%
Ferroelectric materials
67%
Annealing
56%
Photoluminescence
47%
Heterojunctions
46%
Capacitors
43%
Metallorganic chemical vapor deposition
43%
Growth temperature
39%
Dielectric properties
37%
Electric properties
36%
Transmission electron microscopy
33%
Ion beam assisted deposition
32%
Etching
32%
Temperature
29%
Ions
29%
Microstructure
28%
Epitaxial films
28%
Characterization (materials science)
26%
Permittivity
26%
Electrodes
24%
Silicon
23%
Crystals
22%
X ray diffraction
20%
Structural properties
20%
Chemical analysis
19%
Eutectics
19%
Crystalline materials
19%
X rays
18%
Quantum well infrared photodetectors
18%
Capacitance
18%
Atomic layer deposition
18%
Polarization
17%
Aluminum oxide
17%
Conduction bands
17%
Curie temperature
16%
Lead zirconate titanate
16%
Copper oxides
16%
Hafnium
16%
Ferroelectric thin films
16%
Multiple-gate field-effect transistors
15%
Oxides
15%
Diffraction
15%
Electron microscopes
15%
Physics & Astronomy
metalorganic chemical vapor deposition
93%
thin films
57%
quantum wells
40%
high electron mobility transistors
38%
electrical properties
26%
microstructure
22%
characterization
22%
dielectric properties
21%
x ray analysis
18%
eutectics
17%
aluminum gallium arsenides
17%
molecular beam epitaxy
17%
capacitors
16%
transmission electron microscopy
16%
electrodes
15%
annealing
14%
voltage amplifiers
14%
ion beams
14%
copper oxides
14%
electron microscopes
14%
vapors
13%
transistor circuits
13%
amplifier design
13%
plane strain
13%
temperature
13%
copper
13%
permittivity
13%
cycles
12%
quantum well infrared photodetectors
12%
metals
12%
augmentation
11%
x ray diffraction
11%
CMOS
11%
power amplifiers
10%
silicon
10%
performance
10%
gases
10%
crystal surfaces
9%
defects
9%
surface emitting lasers
9%
traps
9%
tangents
9%
degradation
9%
electrical resistivity
9%
barrier layers
9%
x rays
9%
grain boundaries
9%
low voltage
9%
superlattices
8%
light emission
8%
Chemical Compounds
Capacitor
37%
Annealing
33%
Molecular Beam Epitaxy
33%
Strain
29%
Microstructure
26%
Electrical Property
24%
Etching
22%
Electron Mobility
22%
Photoluminescence
21%
Ion Beam
20%
Eutectics
18%
Polarization
18%
Dielectric Property
17%
Leakage Current
17%
Dielectric Constant
15%
Schottky Contact
15%
Energy
14%
Curie Temperature
14%
Band Offset
14%
Optical Spectroscopy
14%
Rapid Thermal Annealing
13%
Domain Boundary
13%
Copper Oxide
13%
Epitaxial Film
13%
Hafnium Atom
12%
Grain Boundary
12%
Schottky Barrier
12%
Hysteresis
12%
Photonic Crystal
11%
Transmission Electron Microscopy
11%
Grain Size
11%
X-Ray Diffraction
10%
Superconductor
10%
Deposition Technique
10%
Refractory
9%
Dielectric Material
9%
Alloying
9%
Valence Band
8%
Semiconductor
8%
Oxide
8%
Chemical Vapour Deposition
8%
Fluorescence Maxima
8%
Superlattice
7%
Interface Trap
7%
Molecular Beam
7%
Surface
7%
Behavior as Electrode
7%
Gas
7%
Ion
7%
Electron Gas
7%
