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查看斯高帕斯 (Scopus) 概要
林 群雄
教授
國際半導體產業學院
電話
+886-3-5712121#55918
電子郵件
Chun_lin
nycu.edu
tw
網站
https://nycu-icst-advanced-semiconductor-lab7.webnode.tw/
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928
引文
16
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642
引文
13
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
604
引文
13
h-指數
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1992 …
2026
每年研究成果
概覽
指紋
網路
計畫
(7)
研究成果
(78)
類似的個人檔案
(6)
指紋
查看啟用 Chun-Hsiung Lin 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Material Science
Transistor
100%
Thin Films
89%
Thin-Film Transistor
84%
Electron Mobility
82%
Ferroelectric Material
69%
Superlattice
64%
Capacitor
62%
Dielectric Material
61%
Metal-Organic Chemical Vapor Deposition
59%
Silicon
52%
Quantum Well
45%
Heterojunction
44%
Density
44%
Annealing Temperature
44%
Zirconia
42%
Gallium Arsenide
39%
Indium
37%
Aluminum Nitride
34%
Oxide Compound
33%
Electrical Property
30%
Zinc Oxide
30%
Film
26%
Aluminum Oxide
24%
Surface Roughness
24%
Amplifier
23%
Molecular Beam Epitaxy
22%
Ferroelectricity
22%
Ferroelectric Thin Films
21%
Tin
21%
Dielectric Property
21%
Chemical Vapor Deposition
19%
Electrical Resistivity
18%
Permittivity
18%
Capacitance
18%
Transmission Electron Microscopy
16%
Field Effect Transistor
15%
Annealing
15%
Oxide Semiconductor
15%
Metal-Oxide-Semiconductor Field-Effect Transistor
14%
Epitaxial Film
14%
Titanium Oxide
14%
GaAs/AlGaAs
14%
Ion Beam Assisted Deposition
14%
Photoluminescence
12%
X-Ray Diffraction
12%
Thermal Stability
11%
Indium Gallium Arsenide
11%
Band Offset
11%
Nucleation
10%
Schottky Barrier
10%
Keyphrases
Metal-organic Chemical Vapor Deposition (MOCVD)
66%
Ultrathin
60%
Thin-film Transistors
55%
Superlattice
50%
Ferroelectric Capacitor
46%
HfO2
43%
Electrical Characteristics
43%
Atomic Layer Deposited
43%
Si Substrate
42%
AlGaN/GaN High Electron Mobility Transistor
41%
GaN MIS-HEMT
36%
Zirconium Dioxide
35%
Annealing
34%
Annealing Temperature
33%
GaN HEMT
32%
Atomic Layer Deposition
31%
In Situ
30%
InGaP
28%
Microstructure
27%
Breakdown Voltage
25%
Gallium Arsenide
25%
Passivation Layer
24%
High Electron Mobility Transistor
23%
AlGaN-GaN
23%
Multiple Quantum Wells
21%
HfZrO2
21%
Gate Dielectric Layer
21%
Electrical Properties
21%
High Power
20%
Remanent Polarization
19%
Heterostructure
18%
Ferroelectric Properties
18%
Fin Field-effect Transistor (FinFET)
18%
Endurance Performance
18%
LaNiO3 Electrode
18%
Capacitor
18%
Device Characteristics
17%
Highly Textured
16%
Barrier Layer
16%
InSnZnO
16%
Aluminum Oxide
15%
X-ray
15%
Wake-up
15%
Dielectric Properties
15%
Metal-insulator-semiconductor
15%
Lattice Matching
15%
On-resistance
14%
Gas Source Molecular Beam Epitaxy
14%
Growth Temperature
14%
Silicon-on-insulator
14%
Engineering
Atomic Layer
64%
Transistor
57%
Thin film transistors
54%
Atomic Layer Deposition
30%
Breakdown Voltage
23%
Channel Length
22%
Si Substrate
21%
Silicon on Insulator
21%
Superlattice
19%
Power Amplifier
18%
Metal-Oxide-Semiconductor Field-Effect Transistor
14%
Oxide Film
14%
Channel Transistor
14%
Passivation Layer
12%
Interfacial Layer
12%
Electrical Performance
12%
Nitride
11%
Dielectrics
11%
Thin-Film Transistor
10%
Current Drain
10%
Cutoff Frequency
10%
Interface Trap
10%
High Electric Field
9%
Radio Frequency
9%
Gallium Arsenide
8%
Aluminum Oxide
8%
Repetition Rate
8%
Gate Stack
8%
Electric Field
7%
Plate Structure
7%
Two-Dimensional Electron Gas
7%
Oxide Semiconductor
7%
Barrier Layer
7%
Dielectric Layer
7%
Device Performance
7%
Random Access Memory
7%
Performance Analysis
7%
Metal Organic Chemical Vapor Deposition
7%
Heat Losses
7%
Pulsed Laser
7%
Passivation
7%
Electrical Stability
7%
Epitaxial Film
7%
Switching Time
7%
Power Device
7%
Manufacturing Engineering
7%
Chilling
7%
Indium Gallium Arsenide
7%
Si Device
7%
Thermal Characteristic
7%
