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查看斯高帕斯 (Scopus) 概要
林 群雄
教授
國際半導體產業學院
電話
+886-3-5712121#55918
電子郵件
Chun_lin
nycu.edu
tw
網站
https://nycu-icst-advanced-semiconductor-lab7.webnode.tw/
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526
引文
13
h-指數
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320
引文
9
h-指數
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220
引文
7
h-指數
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1992 …
2024
每年研究成果
概覽
指紋
網路
計畫
(7)
研究成果
(61)
類似的個人檔案
(6)
指紋
查看啟用 Chun-Hsiung Lin 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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重量
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Keyphrases
Metal-organic Chemical Vapor Deposition (MOCVD)
100%
GaN HEMT
83%
Si Substrate
70%
Electrical Characteristics
56%
Ultrathin
51%
Thin-film Transistors
51%
LaNiO3
48%
Atomic Layer Deposited
43%
Microstructure
41%
Annealing Temperature
39%
Annealing
38%
Electrical Properties
37%
Gallium Arsenide
37%
Dielectric Properties
36%
InGaP
34%
Multiple Quantum Wells
34%
Ferroelectric Capacitor
34%
Metal-ferroelectric-metal Capacitor
32%
High Electron Mobility Transistor
30%
Breakdown Voltage
28%
AlGaN-GaN
28%
Gas Source Molecular Beam Epitaxy
27%
HfO2
26%
Aluminum Oxide
25%
Growth Temperature
25%
Silicon-on-insulator
25%
GaN-on-Si
25%
Dielectric Constant
24%
Ferroelectric Properties
23%
Insulator Substrate
23%
Remanent Polarization
22%
Superlattice
22%
Atomic Layer Deposition
22%
Channel Mobility
20%
InAsP
19%
Hf0.5Zr0.5O2
19%
Device Characteristics
18%
Interface Traps
18%
Electrical Characterization
17%
Gate-all-around
17%
Short Channel
17%
Capacitors
17%
SiGe
17%
Epitaxial Layers
17%
GaN MIS-HEMT
17%
Digital Etching
17%
Chemical Vapor
17%
GaAs-AlGaAs
17%
Resistivity
17%
Strain-compensated
17%
Material Science
Thin Films
98%
Metal-Organic Chemical Vapor Deposition
74%
Transistor
69%
Capacitor
66%
Electron Mobility
63%
Ferroelectric Material
58%
Silicon
54%
Gallium Arsenide
51%
Quantum Well
46%
Heterojunction
42%
Density
40%
Surface (Surface Science)
40%
Electrical Property
37%
Thin-Film Transistor
34%
Dielectric Property
33%
Superlattice
31%
Dielectric Material
29%
Film
28%
Oxide Compound
28%
Ferroelectricity
25%
Chemical Vapor Deposition
24%
Aluminum Nitride
23%
Capacitance
23%
Al2O3
21%
Surface Roughness
19%
Phase Composition
19%
Field Effect Transistor
19%
Indium
19%
Zinc Oxide
19%
Molecular Beam Epitaxy
18%
Permittivity
18%
Transmission Electron Microscopy
17%
Zirconia
17%
Aluminium Gallium Arsenide
17%
Metal-Oxide-Semiconductor Field-Effect Transistor
17%
Ferroelectric Thin Films
17%
Oxidation Reaction
17%
Epitaxial Film
17%
Annealing
15%
Oxide Semiconductor
15%
Epitaxy
14%
Indium Gallium Arsenide
13%
Nucleation
12%
Schottky Barrier
12%
Electrical Resistivity
12%
X-Ray Diffraction
12%
Photoluminescence
12%
Electronic Circuit
10%
Buffer Layer
10%
Grain Boundaries
10%
Engineering
Thin Films
70%
Gallium Arsenide
56%
Quantum Well
54%
Thin-Film Transistor
51%
Annealing Temperature
50%
Dielectrics
45%
Atomic Layer
43%
Metal Organic Chemical Vapor Deposition
36%
Si Substrate
32%
Superlattice
31%
Breakdown Voltage
29%
Atomic Layer Deposition
28%
Ray Diffraction
25%
Interface Trap
21%
Power Amplifier
20%
Band Offset
19%
Source Gas
18%
Phase Composition
18%
Silicon on Insulator
17%
Metal-Oxide-Semiconductor Field-Effect Transistor
17%
Aluminium Gallium Arsenide
17%
Assisted Deposition
17%
Passivation Layer
17%
Electric Field
16%
Heterojunctions
16%
Schottky Barrier
15%
Indium Gallium Arsenide
14%
Oxide Semiconductor
13%
Heterostructures
12%
Incident Angle
12%
Radio Frequency
12%
Conduction Band
12%
Growth Temperature
12%
Cutoff Frequency
11%
Photonics
11%
Heat Losses
11%
Plane Strain
11%
High Electric Field
11%
Buffer Layer
11%
Deposition System
11%
Ion Energy
11%
Power Electronics
11%
Ray Photoelectron Spectroscopy
10%
Gate Length
10%
Eutectic Bonding
10%
Deposition Temperature
10%
Eutectics
9%
Crystal Surface
9%
Dislocation Density
9%
Gaas Heterostructures
9%