!!Projects per year
個人檔案
研究專長
Advanced III-V compound semiconductor and Si CMOS Devices
Compound semiconductor device manufacturing and integration (GaAs, InP, Sb-based and GaN)
Semiconductor process technology of advanced 3D Si CMOS devices (e.g. FinFET) Microelectronics Materials Science & Engineering
教育/學術資格
PhD, 材料科學與工程, University of Illinois at Urbana-Champaign
指紋
查看啟用 Chun-Hsiung Lin 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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過去五年中的合作和熱門研究領域
國家/地區層面的近期外部共同作業。按一下圓點深入探索詳細資料，或
專案
- 7 已完成
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臺瑞(SE)雙邊協議型擴充加值(add-on)國際合作研究計畫—開發應用於毫米波/次毫米波之氮化銦鋁鎵/氮化鎵高電子遷移率電晶體於絕緣體上矽(SOI)基板(3/5)
Lin, C.-H. (PI)
1/10/22 → 30/09/23
研究計畫: Other Government Ministry Institute
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原子層沉積法製造奈米級鐵電閘極氧化物薄膜電晶體於記憶體之應用
Lin, C.-H. (PI)
1/08/22 → 31/07/23
研究計畫: Other Government Ministry Institute
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砷化銦鎵通道MOSFET於高頻放大器之應用及砷化銦鎵通道與矽鰭式場效電晶體以Core-Shell結構整合
Lin, C.-H. (PI)
1/03/22 → 28/02/23
研究計畫: Other Government Ministry Institute
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臺瑞(SE)雙邊協議型擴充加值(add-on)國際合作研究計畫—開發應用於毫米波/次毫米波之氮化銦鋁鎵/氮化鎵高電子遷移率電晶體於絕緣體上矽(SOI)基板(2/5)
Lin, C.-H. (PI)
1/10/21 → 30/09/22
研究計畫: Other Government Ministry Institute
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砷化銦鎵通道MOSFET於高頻放大器之應用及砷化銦鎵通道與矽鰭式場效電晶體以Core-Shell結構整合
Lin, C.-H. (PI)
1/03/21 → 28/02/22
研究計畫: Other Government Ministry Institute
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Characteristics of GaN MIS-HEMT with ZrO2/HfO2 Superlattice Gate Dielectric Layer
Chen, K. L., Chou, H., Lin, K. S., Chen, Y., Yang, H. C., Weng, Y. C., Yang, C. Y., Jang, W. Y., Chang, S. Z., Chang, E. Y. & Lin, C. H., 1 1月 2026, 於: ECS Journal of Solid State Science and Technology. 15, 1, 015007.研究成果: Article › 同行評審
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Effect of in-situ ozone annealing on top-gate atomic layer deposited InZnOx channel thin-film transistors on various underlying dielectric layers
Lin, G. H., Li, Y. T., Chen, Y., Yang, H. C., Chen, C. W., Chou, T. T., Kei, C. C., Jang, W. Y., Chang, S. Z., Chang, E. Y. & Lin, C. H., 2月 2026, 於: Materials Science in Semiconductor Processing. 202, 110176.研究成果: Article › 同行評審
1 引文 斯高帕斯（Scopus） -
Effects of Composition and Ozone Treatment on the Electrical Performance and Stability of ALD Indium Gallium Oxide TFTs
Yang, H. C., Li, Y. T., Lin, G. H., Chen, Y., Liang, Y. K., Chen, C. W., Chou, T. T., Kei, C. C., Huang, H. Y., Yang, F. C., Lin, Y. M. & Lin, C. H., 2026, 於: IEEE Transactions on Electron Devices. 73, 3, p. 1387-1394 8 p.研究成果: Article › 同行評審
1 引文 斯高帕斯（Scopus） -
High-frequency and high-power AlGaN/GaN MOSHEMTs fabricated using atomic layer etching for gate recess
Huang, H. Y., Yang, T. Y., Liu, C. X., Chang, K. P., Weng, Y. C., Wu, J. S., Huang, C. J., Chiu, C. H., Lin, Y. T., Dee, C. F., Lin, C. H. & Chang, E. Y., 1 12月 2025, 於: Applied Physics Express. 18, 12, 126501.研究成果: Article › 同行評審
開啟存取1 引文 斯高帕斯（Scopus） -
High-Frequency Pulsed Laser Driver Using Complementary GaN HEMTs
Liu, C. Y., Lin, C. H., Kuo, H. C., Tang, L. C., Hong, Y. H., Tu, C. C., Chang, E. Y. & Chieng, W. H., 2025, 於: IEEE Transactions on Power Electronics. 40, 2, p. 3370-3384 15 p.研究成果: Article › 同行評審
開啟存取10 引文 斯高帕斯（Scopus）