每年專案
個人檔案
研究專長
Advanced III-V compound semiconductor and Si CMOS Devices
Compound semiconductor device manufacturing and integration (GaAs, InP, Sb-based and GaN)
Semiconductor process technology of advanced 3D Si CMOS devices (e.g. FinFET) Microelectronics Materials Science & Engineering
教育/學術資格
PhD, 材料科學與工程, University of Illinois at Urbana-Champaign
指紋
查看啟用 Chun-Hsiung Lin 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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網路
國家/地區層面的近期外部共同作業。按一下圓點深入探索詳細資料，或
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臺瑞(SE)雙邊協議型擴充加值(add-on)國際合作研究計畫—開發應用於毫米波/次毫米波之氮化銦鋁鎵/氮化鎵高電子遷移率電晶體於絕緣體上矽(SOI)基板(3/5)
1/10/22 → 30/09/23
研究計畫: Other Government Ministry Institute
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砷化銦鎵通道MOSFET於高頻放大器之應用及砷化銦鎵通道與矽鰭式場效電晶體以Core-Shell結構整合
1/03/22 → 28/02/23
研究計畫: Other Government Ministry Institute
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臺瑞(SE)雙邊協議型擴充加值(add-on)國際合作研究計畫—開發應用於毫米波/次毫米波之氮化銦鋁鎵/氮化鎵高電子遷移率電晶體於絕緣體上矽(SOI)基板(2/5)
1/10/21 → 30/09/22
研究計畫: Other Government Ministry Institute
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砷化銦鎵通道MOSFET於高頻放大器之應用及砷化銦鎵通道與矽鰭式場效電晶體以Core-Shell結構整合
1/03/21 → 28/02/22
研究計畫: Other Government Ministry Institute
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Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications
Hieu, L. T., Hsu, H. T., Chiang, C. H., Panda, D., Lee, C. T., Lin, C. H. & Chang, E. Y., 2月 2023, 於: Semiconductor Science and Technology. 38, 2, 025006.研究成果: Article › 同行評審
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Buffer Traps Effect on GaN-on-Si High-Electron-Mobility Transistor at Different Substrate Voltages
Lin, Y., Kao, M. L., Weng, Y. C., Dee, C. F., Chen, S. C., Kuo, H. C., Lin, C. H. & Chang, E. Y., 12月 2022, 於: Micromachines. 13, 12, 2140.研究成果: Article › 同行評審
開啟存取 -
Characterization of Ferroelectric Characteristics for Hafnium Zirconium Oxide Capacitors with Refractory Electrodes
Liang, Y. K., Lin, J. W., Huang, Y. S., Lin, W. C., Young, B. F., Shih, Y. C., Lu, C. C., Yeong, S. H., Lin, Y. M., Liu, P. T., Chang, E. Y. & Lin, C. H., 5月 2022, 於: ECS Journal of Solid State Science and Technology. 11, 5, 053012.研究成果: Article › 同行評審
開啟存取1 引文 斯高帕斯（Scopus） -
Effects of Annealing Temperature on TiN/Hf0.5Zr0.5O2/TiN Ferroelectric Capacitor Prepared by <italic>In-situ</italic> like Consecutive Atomic Layer Deposition
Liang, Y. K., Huang, Y. S., Peng, L. C., Yang, T. Y., Young, B. F., Lu, C. C., Yeong, S. H., Lin, Y. M., Su, C. J., Chang, E. Y. & Lin, C. H., 2022, (Accepted/In press) 於: IEEE Transactions on Nanotechnology. p. 1-4 4 p.研究成果: Article › 同行評審
2 引文 斯高帕斯（Scopus） -
Electrical Characteristics of Ultrathin InZnO Thin-Film Transistors Prepared by Atomic Layer Deposition
Liang, Y. K., Lin, J. W., Peng, L. C., Hua, Y. M., Chou, T. T., Kei, C. C., Lu, C. C., Huang, H. Y., Yeong, S. H., Lin, Y. M., Liu, P. T., Chang, E. Y. & Lin, C. H., 2022, (Accepted/In press) 於: IEEE Transactions on Electron Devices. p. 1-6 6 p.研究成果: Article › 同行評審