每年專案
個人檔案
研究專長
Advanced III-V compound semiconductor and Si CMOS Devices
Compound semiconductor device manufacturing and integration (GaAs, InP, Sb-based and GaN)
Semiconductor process technology of advanced 3D Si CMOS devices (e.g. FinFET) Microelectronics Materials Science & Engineering
教育/學術資格
PhD, 材料科學與工程, University of Illinois at Urbana-Champaign
指紋
查看啟用 Chun-Hsiung Lin 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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過去五年中的合作和熱門研究領域
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專案
- 7 已完成
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臺瑞(SE)雙邊協議型擴充加值(add-on)國際合作研究計畫—開發應用於毫米波/次毫米波之氮化銦鋁鎵/氮化鎵高電子遷移率電晶體於絕緣體上矽(SOI)基板(3/5)
Lin, C.-H. (PI)
1/10/22 → 30/09/23
研究計畫: Other Government Ministry Institute
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原子層沉積法製造奈米級鐵電閘極氧化物薄膜電晶體於記憶體之應用
Lin, C.-H. (PI)
1/08/22 → 31/07/23
研究計畫: Other Government Ministry Institute
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砷化銦鎵通道MOSFET於高頻放大器之應用及砷化銦鎵通道與矽鰭式場效電晶體以Core-Shell結構整合
Lin, C.-H. (PI)
1/03/22 → 28/02/23
研究計畫: Other Government Ministry Institute
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臺瑞(SE)雙邊協議型擴充加值(add-on)國際合作研究計畫—開發應用於毫米波/次毫米波之氮化銦鋁鎵/氮化鎵高電子遷移率電晶體於絕緣體上矽(SOI)基板(2/5)
Lin, C.-H. (PI)
1/10/21 → 30/09/22
研究計畫: Other Government Ministry Institute
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砷化銦鎵通道MOSFET於高頻放大器之應用及砷化銦鎵通道與矽鰭式場效電晶體以Core-Shell結構整合
Lin, C.-H. (PI)
1/03/21 → 28/02/22
研究計畫: Other Government Ministry Institute
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Analysis of breakdown voltage for GaN MIS-HEMT with various composite field plate configurations and passivation layers
Langpoklakpam, C., Hsiao, Y. K., Yi Chang, E., Lin, C. H. & Kuo, H. C., 6月 2024, 於: Solid-State Electronics. 216, 108930.研究成果: Article › 同行評審
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Highly Scaled BEOL-Compatible Thin Film Transistors With Ultrathin Atomic Layer Deposited Indium-Tin-Zinc-Oxide Channel
Liang, Y. K., Zheng, J. Y., Lin, Y. L., Lu, Y. C., Hsieh, D. R., Chou, T. T., Kei, C. C., Huang, H. Y., Lin, Y. M., Tseng, Y. C., Chao, T. S., Chang, E. Y., Toprasertpong, K., Takagi, S. & Lin, C. H., 1 6月 2024, 於: IEEE Transactions on Electron Devices. 71, 6, p. 3671-3677 7 p.研究成果: Article › 同行評審
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Aggressively Scaled Atomic Layer Deposited Amorphous InZnOxThin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High Gm(802 μS/μm at VDS= 2V)
Liang, Y. K., Zheng, J. Y., Lin, Y. L., Li, W. L., Lu, Y. C., Hsieh, D. R., Peng, L. C., Chou, T. T., Kei, C. C., Lu, C. C., Huang, H. Y., Tseng, Y.-C., Chao, T.-S., Chang, E. Y. & Lin, C. H., 2023, 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Institute of Electrical and Electronics Engineers Inc., (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2023-June).研究成果: Conference contribution › 同行評審
6 引文 斯高帕斯（Scopus） -
Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate
Weng, Y. C., Hsiao, M. Y., Lin, C. H., Lan, Y.-P. & Chang, E. Y., 5月 2023, 於: Materials. 16, 9, 3376.研究成果: Article › 同行評審
開啟存取 -
Effect of Local Substrate Removal and Backside Al Heat Dissipation Layer on GaN-on-Si Device RF Performance
Lin, Y., Huang, H. Y., Weng, Y. C., Kuo, H. C., Dee, C. F., Lin, C. H. & Chang, E. Y., 9月 2023, 於: ECS Journal of Solid State Science and Technology. 12, 9, 095005.研究成果: Article › 同行評審