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每年研究成果
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2014
First-principles calculations on the schottky barrier height of the NiGe/N-type Ge contact with dopant segregation
Lin, H. C., Lin, C.-Y., Shih, C. J. & Tsui, B.-Y., 1 1月 2014, 2014 International Symposium on Next-Generation Electronics, ISNE 2014. IEEE Computer Society, 6839344. (2014 International Symposium on Next-Generation Electronics, ISNE 2014).研究成果: Conference contribution › 同行評審
1 引文 斯高帕斯（Scopus）