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查看斯高帕斯 (Scopus) 概要
副教授
電子研究所
智慧半導體奈米系統技術研究中心
https://orcid.org/0000-0002-9759-1323
h-index
h10-index
h5-index
793
引文
10
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
34
引文
3
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
20
引文
3
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
2005
2024
每年研究成果
概覽
指紋
網路
計畫
(10)
研究成果
(21)
類似的個人檔案
(6)
指紋
查看啟用 Chiung-Yuan Lin 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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重量
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Keyphrases
First-principles Calculations
100%
Contact Resistance
44%
Scanning Tunneling Microscope
39%
Kondo Resonance
35%
Single Impurities
35%
Dopant Segregation
35%
NiGe
35%
Atomic Spin
35%
Magnetism
35%
Non-equilibrium
35%
Quantum Critical Point
35%
First-principles Quantum Transport
35%
Transport Studies
35%
Transistor
35%
Exchange Coupling
32%
Adatoms
32%
Antiferromagnetic
29%
Impurities
25%
Hybridization Energy
23%
I-V Curve
23%
Scanning Tunneling Microscopy
23%
Kondo Effect
23%
Two-channel
23%
Kondo
23%
Schottky Barrier Height
23%
Palladium
21%
Bulk State
20%
Rutile
20%
Germanide
18%
Copper Nitride
17%
Thermodynamic System
17%
Surface Engineered
17%
Layered Magnetism
17%
Atomic Scale
17%
Microscopic Theory
17%
Surface Spins
17%
Hydrothermal Modification
17%
Surface Theory
17%
N-type Ge
17%
Hydrothermal Crystallization
17%
Single-molecule Junction
17%
Nanotubes
17%
Photoenergy Conversion
17%
Surface Hydroxyl Groups
17%
Experimental Demonstration
17%
Thermoelectric
17%
Shallow Junction
17%
Graphene
17%
Cu(111) Surface
17%
Germanium
17%
Material Science
Contact Resistance
48%
Doping (Additives)
47%
Transistor
35%
Magnetism
35%
Titanium Oxide
35%
Monolayers
34%
Schottky Barrier
32%
Density
27%
Transition Metal Dichalcogenide
25%
Field Effect Transistor
23%
Mechanical Strength
22%
Palladium
20%
Nanotube
17%
Ferroelectric Material
17%
Anisotropy
17%
Metamaterial
17%
Aluminum
17%
Thin Films
17%
Graphene
17%
Arsenic
17%
Surface Reconstruction
17%
Film
17%
Germanium
17%
Complementary Metal-Oxide-Semiconductor Device
11%
Oxygen Vacancy
11%
Activation Energy
8%
Molecular Structure
8%
Electrical Resistivity
8%
X-Ray Absorption Spectroscopy
8%
X-Ray Diffraction
8%
Nitride Compound
8%
Two-Dimensional Material
5%
Transition Metal Oxide
5%
Transition Metal
5%
Electronic Property
5%
