Chenming Hu

查看斯高帕斯 (Scopus) 概要

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每年研究成果

563 Article
265 Conference contribution
178 Conference article
88 Paper
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7結果

篩選

2023
Erratum: Low-Temperature Microwave Annealing Processes for Future IC Fabrication - A Review (IEEE Trans. Electron Devices (2014) 61:3 (651–665) DOI: 10.1109/TED.2014.2300898)
Lee, Y. J., Cho, T. C., Chuang, S. S., Hsueh, F. K., Lu, Y. L., Sung, P. J., Chen, H. C., Current, M. I., Tseng, T.-Y., Chao, T. S., Hu, C. & Yang, F. L., 1 7月 2023, 於: IEEE Transactions on Electron Devices. 70, 7, p. 3983 1 p.
研究成果: Comment/debate

開啟存取
2020
Publisher Correction: Enhanced ferroelectricity in ultrathin films grown directly on silicon (Nature, (2020), 580, 7804, (478-482), 10.1038/s41586-020-2208-x)
Cheema, S. S., Kwon, D., Shanker, N., dos Reis, R., Hsu, S. L., Xiao, J., Zhang, H., Wagner, R., Datar, A., McCarter, M. R., Serrao, C. R., Yadav, A. K., Karbasian, G., Hsu, C. H., Tan, A. J., Wang, L. C., Thakare, V., Zhang, X., Mehta, A. & Karapetrova, E. 及其他8, Chopdekar, R. V., Shafer, P., Arenholz, E., Hu, C., Proksch, R., Ramesh, R., Ciston, J. & Salahuddin, S., 21 5月 2020, 於: Nature. 581, 7808, p. E5
研究成果: Comment/debate

開啟存取
8 引文斯高帕斯（Scopus）
2019
Author Correction: Spatially resolved steady-state negative capacitance (Nature, (2019), 565, 7740, (468-471), 10.1038/s41586-018-0855-y)
Yadav, A. K., Nguyen, K. X., Hong, Z., García-Fernández, P., Aguado-Puente, P., Nelson, C. T., Das, S., Prasad, B., Kwon, D., Cheema, S., Khan, A. I., Hu, C.-M., Íñiguez, J., Junquera, J., Chen, L. Q., Muller, D. A., Ramesh, R. & Salahuddin, S., 25 4月 2019, 於: Nature. 568, 7753, p. E13
研究成果: Comment/debate

開啟存取
1 引文斯高帕斯（Scopus）
2010

Erratum: Linearly graded doping drift region: A novel lateral voltage-sustaining layer used for improvement of RESURF LDMOS transistor performances (Semiconductor Science and Technology (2002) 17 (721))
He, J., Xi, X., Chan, M., Hu, C.-M., Li, Y., Xing, Z. & Huang, R., 11月 2010, 於: Semiconductor Science and Technology. 25, 11, 119801.
研究成果: Comment/debate
Erratum: Normalized mutual integral difference operator: A novel experimental method for extracting threshold voltage of MOSFETs (Microelectronics Journal (2002) 33 (667670))
He, J., Xing, Z., Wang, Y., Xi, X., Chan, M. & Hu, C.-M., 10月 2010, 於: Microelectronics Journal. 41, 10, p. 693 1 p.
研究成果: Comment/debate

開啟存取
1984

Reply to “Comments on ‘Source-and-Drain Series Resistance of LDD MOSFET's’”
Sheu, B. J., Hu, C.-M., Ko, P. K. & Hsu, F. C., 12月 1984, 於: Ieee Electron Device Letters. 5, 12, p. 535 1 p.
研究成果: Comment/debate

2 引文斯高帕斯（Scopus）
1979

Correction to “Determination of Nonuniform Diffusion Length and Electric Field in Semiconductors”
Hu, C.-M., 2月 1979, 於: IEEE Transactions on Electron Devices. 26, 2, p. 162 1 p.
研究成果: Comment/debate

胡 正明

研究成果

搜尋結果

Erratum: Low-Temperature Microwave Annealing Processes for Future IC Fabrication - A Review (IEEE Trans. Electron Devices (2014) 61:3 (651–665) DOI: 10.1109/TED.2014.2300898)

Publisher Correction: Enhanced ferroelectricity in ultrathin films grown directly on silicon (Nature, (2020), 580, 7804, (478-482), 10.1038/s41586-020-2208-x)

Author Correction: Spatially resolved steady-state negative capacitance (Nature, (2019), 565, 7740, (468-471), 10.1038/s41586-018-0855-y)

Erratum: Linearly graded doping drift region: A novel lateral voltage-sustaining layer used for improvement of RESURF LDMOS transistor performances (Semiconductor Science and Technology (2002) 17 (721))

Erratum: Normalized mutual integral difference operator: A novel experimental method for extracting threshold voltage of MOSFETs (Microelectronics Journal (2002) 33 (667670))

Reply to “Comments on ‘Source-and-Drain Series Resistance of LDD MOSFET's’”

Correction to “Determination of Nonuniform Diffusion Length and Electric Field in Semiconductors”

胡正明