Cheng-Huang Kuo

2009

The structure of GaN-based transverse junction blue LED array for uniform distribution of injected current/carriers

Shi, J. W., Guol, S. H., Lin, C. S., Sheu, J. K., Chang, K. H., Lai, W. C., Kuo, C-H., Tun, C. J. & Chyi, J. I., 21 5月 2009, 於: IEEE Journal on Selected Topics in Quantum Electronics. 15, 4, p. 1292-1297 6 p., 4957079.

研究成果: Article › 同行評審

11 引文斯高帕斯（Scopus）

2008

AlGaNGaN Schottky barrier diodes with multi-Mg_xN_yGaN buffer

Lee, K. H., Chang, S. J., Chang, P. C., Wang, Y. C. & Kuo, C-H., 22 9月 2008, 於: Journal of the Electrochemical Society. 155, 10

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

Four-wavelengths-mixed white light emitting diodes with dual-wavelength-pumped green and red phosphors

Lai, W. C., Sheu, J. K., Fu, Y. K., Kuo, C-H., Kuo, C. W., Tun, C. J., Pan, C. J. & Chi, G. C., 8 8月 2008, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 47, 8 PART 1, p. 6317-6319 3 p.

研究成果: Article › 同行評審

GaN-based schottky barrier photodetectors with a 12-Pair Mg _xN_y-GaN buffer layer

Chang, S. J., Lee, K. H., Chang, P. C., Wang, Y. C., Yu, C. L., Kuo, C-H. & Wu, S. L., 1 12月 2008, 於: IEEE Journal of Quantum Electronics. 44, 10, p. 916-921 6 p.

研究成果: Article › 同行評審

35 引文斯高帕斯（Scopus）

High quality GaN-based Schottky barrier diodes

Lee, K. H., Chang, S. J., Chang, P. C., Wang, Y. C. & Kuo, C-H., 14 10月 2008, 於: Applied Physics Letters. 93, 13, 132110.

研究成果: Article › 同行評審

14 引文斯高帕斯（Scopus）

III-nitride-based microarray light-emitting diodes with enhanced light extraction efficiency

Wu, M. L., Lee, Y. C., Lee, P. S., Kuo, C-H. & Chang, J. Y., 22 8月 2008, 於: Japanese Journal of Applied Physics. 47, 8 PART 2, p. 6757-6759 3 p.

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

Low operation voltage of nitride-based LEDs with Al-doped ZnO transparent contact layer

Kuo, C-H., Yeh, C. L., Chen, P. H., Lai, W. C., Tun, C. J., Sheu, J. K. & Chi, G. C., 4 8月 2008, 於: Electrochemical and Solid-State Letters. 11, 9

研究成果: Article › 同行評審

29 引文斯高帕斯（Scopus）

Phosphor-free GaN-based transverse junction white-light light-emitting diodes with regrown n-type regions

Shi, J. W., Chen, C. C., Wang, C. K., Lin, C. S., Sheu, J. K., Lai, W. C., Kuo, C-H., Tun, C. J., Yang, T. H., Tsao, F. C. & Chyi, J. I., 15 3月 2008, 於: IEEE Photonics Technology Letters. 20, 6, p. 449-451 3 p.

研究成果: Article › 同行評審

16 引文斯高帕斯（Scopus）

Residual strain in ZnO nanowires grown by catalyst-free chemical vapor deposition on GaN/sapphire (0001)

Tsao, F. C., Chen, J. Y., Kuo, C-H., Chi, G. C., Pan, C. J., Huang, P. J., Tun, C. J., Pong, B. J., Hsueh, T. H., Chang, C. Y., Pearton, S. J. & Ren, F., 30 5月 2008, 於: Applied Physics Letters. 92, 20, 203110.

研究成果: Article › 同行評審

17 引文斯高帕斯（Scopus）

Self-assembled InN dots grown on GaN with an In_0.08Ga_0.92N intermediate layer by metal organic chemical vapor deposition

Fu, Y. K., Kuo, C-H., Tun, C. J., Kuo, C. W., Lai, W. C., Chi, G. C., Pan, C. J., Chen, M. C., Hong, H. F. & Lan, S. M., 1 10月 2008, 於: Journal of Crystal Growth. 310, 20, p. 4456-4459 4 p.

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

Surface properties of the AlGaN/GaN superlattice grown at different temperatures by metalorganic chemical vapor deposition

Lai, W. C., Kuo, C-H., Yen, W. Y., Sheu, J. K. & Chang, S. J., 19 12月 2008, 於: Japanese journal of applied physics. 47, 12, p. 8730-8732 3 p.

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

2007

Dislocation reduction in GaN with multiple Mgx Ny GaN buffer layers by metal organic chemical vapor deposition

Tun, C. J., Kuo, C-H., Fu, Y. K., Kuo, C. W., Pan, C. J. & Chi, G. C., 1 6月 2007, 於: Applied Physics Letters. 90, 21, 212109.

研究成果: Article › 同行評審

16 引文斯高帕斯（Scopus）

Enhanced efficiency of GaN-based light-emitting diodes with periodic textured Ga-doped ZnO transparent contact layer

Sheu, J. K., Lu, Y. S., Lee, M. L., Lai, W. C., Kuo, C-H. & Tun, C. J., 2 8月 2007, 於: Applied Physics Letters. 90, 26, 263511.

研究成果: Article › 同行評審

93 引文斯高帕斯（Scopus）

GaN-based Indiumtin-oxide light emitting diodes with nanostructured silicon upper contacts

Kuo, C-H., Chang, S. J. & Kuan, H., 11 9月 2007, 於: IET Optoelectronics. 1, 3, p. 110-112 3 p.

研究成果: Article › 同行評審

Nitride-based near-ultraviolet light emitting diodes with meshed p-GaN

Kuo, C-H., Feng, H. C., Kuo, C. W., Chen, C. M., Wu, L. W. & Chi, G. C., 13 4月 2007, 於: Applied Physics Letters. 90, 14, 142115.

研究成果: Article › 同行評審

32 引文斯高帕斯（Scopus）

Nitride-based near-ultraviolet mesh MQW light-emitting diodes

Kuo, C-H. & Feng, H. C., 1 12月 2007, 於: IEEE Photonics Technology Letters. 19, 23, p. 1901-1903 3 p.

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

2006

Abnormal blue shift of InGaN micro-size light emitting diodes

Pong, B. J., Chen, C. H., Yen, S. H., Hsu, J. F., Tun, C. J., Kuo, Y. K., Kuo, C-H. & Chi, G. C., 1 9月 2006, 於: Solid-State Electronics. 50, 9-10, p. 1588-1594 7 p.

研究成果: Article › 同行評審

13 引文斯高帕斯（Scopus）

Emission mechanism of mixed-color InGaN/GaN multi-quantum-well light-emitting diodes

Shei, S. C., Sheu, J. K., Tsai, C. M., Lai, W. C., Lee, M. L. & Kuo, C-H., 7 4月 2006, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45, 4 A, p. 2463-2466 4 p.

研究成果: Article › 同行評審

34 引文斯高帕斯（Scopus）

High efficiency and improved ESD characteristics of GaN-based LEDs with naturally textured surface grown by MOCVD

Tsai, C. M., Sheu, J. K., Wang, P. T., Lai, W. C., Shei, S. C., Chang, S. J., Kuo, C-H., Kuo, C. W. & Su, Y. K., 1 6月 2006, 於: IEEE Photonics Technology Letters. 18, 11, p. 1213-1215 3 p.

研究成果: Article › 同行評審

68 引文斯高帕斯（Scopus）

Improvement of near-ultraviolet nitride-based light emitting diodes with mesh indium tin oxide contact layers

Kuo, C-H., Chen, C. M., Kuo, C. W., Tun, C. J., Pan, C. J., Pong, B. J. & Chi, G. C., 23 11月 2006, 於: Applied Physics Letters. 89, 20, 201104.

研究成果: Article › 同行評審

22 引文斯高帕斯（Scopus）

Nitride-based light-emitting diodes with p-AlInGaN surface layers prepared at various temperatures

Kuo, C-H., Kuo, C. W., Chen, C. M., Pong, B. J. & Chi, G. C., 16 11月 2006, 於: Applied Physics Letters. 89, 19, 191112.

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

Rapid thermal annealed InGaN/GaN Flip-Chip LEDs

Chen, W. S., Shei, S. C., Chang, S. J., Su, Y. K., Lai, W. C., Kuo, C-H., Lin, Y. C., Chang, C. S., Ko, T. K., Hsu, Y. P. & Shen, C. F., 1 1月 2006, 於: IEEE Transactions on Electron Devices. 53, 1, p. 32-36 5 p.

研究成果: Article › 同行評審

19 引文斯高帕斯（Scopus）

2005

Al _x Ga _1-x N/GaN heterostructure field effect transistors with various Al mole fractions in AlGaN barrier

Chen, W. S., Chang, S. J., Su, Y. K., Wang, R. L., Kuo, C-H. & Shei, S. C., 1 3月 2005, 於: Journal of Crystal Growth. 275, 3-4, p. 398-403 6 p.

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

High temperature performance and low frequency noise characteristics of AlGaN/GaN/AlGaN double heterostructure metal-oxide-semiconductor heterostructure field-effect-transistors with photochemical vapor deposition SiO₂ layer

Wang, C. K., Chang, S. J., Su, Y. K., Chiou, Y. Z., Kuo, C-H., Chang, C. S., Lin, T. K., Ko, T. K. & Tang, J. J., 4月 2005, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44, 4 B, p. 2458-2461 4 p.

研究成果: Article › 同行評審

7 引文斯高帕斯（Scopus）

ICP etching of sapphire substrates

Hsu, Y. P., Chang, S. J., Su, Y. K., Sheu, J. K., Kuo, C-H., Chang, C. S. & Shei, S. C., 1 1月 2005, 於: Optical Materials. 27, 6, p. 1171-1174 4 p.

研究成果: Article › 同行評審

57 引文斯高帕斯（Scopus）

InGaN-GaN MQW LEDs with Si treatment

Hsu, Y. P., Chang, S. J., Su, Y. K., Chen, S. C., Tsai, J. M., Lai, W. C., Kuo, C-H. & Chang, C. S., 1 8月 2005, 於: IEEE Photonics Technology Letters. 17, 8, p. 1620-1622 3 p.

研究成果: Article › 同行評審

30 引文斯高帕斯（Scopus）

Nitride-based LEDs with ITO on nanostructured silicon contact layers

Kuo, C-H., Chang, S. J. & Chen, S. C., 1 12月 2005, 於: Journal of Crystal Growth. 285, 3, p. 295-299 5 p.

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

Nitride-based light-emitting diodes with p-AIInGaN surface layers

Kuo, C-H., Lin, C. C., Chang, S. J., Hsu, Y. P., Tsai, J. M., Lai, W. C. & Wang, P. T., 1 10月 2005, 於: IEEE Transactions on Electron Devices. 52, 10, p. 2346-2349 4 p.

研究成果: Article › 同行評審

31 引文斯高帕斯（Scopus）

The thickness effect of p-AlGaN blocking layer in UV-A bandpass photodetectors

Wang, C. K., Ko, T. K., Chang, C. S., Chang, S. J., Su, Y. K., Wen, T. C., Kuo, C-H. & Chiou, Y. Z., 1 10月 2005, 於: IEEE Photonics Technology Letters. 17, 10, p. 2161-2163 3 p.

研究成果: Article › 同行評審

11 引文斯高帕斯（Scopus）

2004

GaN MSM photodetectors with TiW transparent electrodes

Wang, C. K., Chang, S. J., Su, Y. K., Chang, C. S., Chiou, Y. Z., Kuo, C-H., Lin, T. K., Ko, T. K. & Tang, J. J., 15 9月 2004, 於: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 112, 1, p. 25-29 5 p.

研究成果: Article › 同行評審

35 引文斯高帕斯（Scopus）

InGaN/GaN MQW blue LEDs with GaN/SiN double buffer layers

Liu, C. H., Chuang, R. W., Chang, S. J., Su, Y. K., Kuo, C-H., Tsai, J. M. & Lin, C. C., 25 8月 2004, 於: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 111, 2-3, p. 214-217 4 p.

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs

Hsu, Y. P., Chang, S. J., Su, Y. K., Sheu, J. K., Lee, C. T., Wen, T. C., Wu, L. W., Kuo, C-H., Chang, C. S. & Shei, S. C., 1 2月 2004, 於: Journal of Crystal Growth. 261, 4, p. 466-470 5 p.

研究成果: Article › 同行評審

65 引文斯高帕斯（Scopus）

Nitride-based LEDs with an SPS tunneling contact layer and an ITO transparent contact

Chang, S. J., Chang, C. S., Su, Y. K., Chuang, R. W., Lai, W. C., Kuo, C-H., Hsu, Y. P., Lin, Y. C., Shei, S. C., Lo, H. M., Ke, J. C. & Sheu, J. K., 1 4月 2004, 於: IEEE Photonics Technology Letters. 16, 4, p. 1002-1004 3 p.

研究成果: Article › 同行評審

70 引文斯高帕斯（Scopus）

Nitride-based near-ultraviolet LEDs with an ITO transparent contact

Kuo, C-H., Chang, S. J., Su, Y. K., Chuang, R. W., Chang, C. S., Wu, L. W., Lai, W. C., Chen, J. F., Sheu, J. K., Lo, H. M. & Tsai, J. M., 15 1月 2004, 於: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 106, 1, p. 69-72 4 p.

研究成果: Article › 同行評審

60 引文斯高帕斯（Scopus）

2003

GaN-based light emitting diodes with Si-doped In_0.23Ga_0.77N/GaN short period superlattice current spreading layer

Kuo, C-H., Chang, S. J., Su, Y. K., Wu, L. W., Chen, J. F., Sheu, J. K. & Tsai, J. M., 4月 2003, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 42, 4 B, p. 2270-2272 3 p.

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

High Brightness InGaN Green LEDs with an ITO on n⁺⁺ -SPS Upper Contact

Chang, C. S., Chang, S. J., Su, Y. K., Kuo, C-H., Lai, W. C., Lin, Y. C., Hsu, Y. P., Shei, S. C., Tsai, J. M., Lo, H. M., Ke, J. C. & Sheu, J. K., 1 11月 2003, 於: IEEE Transactions on Electron Devices. 50, 11, p. 2208-2212 5 p.

研究成果: Article › 同行評審

29 引文斯高帕斯（Scopus）

High transconductance AlGaN/GaN MOSHFETs with photo-CVD gate oxide

Wang, C. K., Lin, T. K., Chiou, Y. Z., Chang, S. J., Su, Y. K., Kuo, C-H. & Ko, T. K., 1 12月 2003, 於: Semiconductor Science and Technology. 18, 12, p. 1033-1036 4 p.

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

In_0.23Ga_0.77N/GaN MQW LEDs with a low temperature GaN cap layer

Wu, L. W., Chang, S. J., Su, Y. K., Chuang, R. W., Hsu, Y. P., Kuo, C-H., Lai, W. C., Wen, T. C., Tsai, J. M. & Sheu, J. K., 1 11月 2003, 於: Solid-State Electronics. 47, 11, p. 2027-2030 4 p.

研究成果: Article › 同行評審

61 引文斯高帕斯（Scopus）

InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer

Wu, L. W., Chang, S. J., Su, Y. K., Tsai, T. Y., Wen, T. C., Kuo, C-H., Lai, W. C., Sheu, J. K., Tsai, J. M., Chen, S. C. & Huang, B. R., 1 1月 2003, 於: Journal of Electronic Materials. 32, 5, p. 411-414 4 p.

研究成果: Article › 同行評審

InGaN/GaN light-emitting diodes with a reflector at the backside of sapphire substrates

Hsu, Y. P., Chang, S. J., Su, Y. K., Chang, C. S., Shei, S. C., Lin, Y. C., Kuo, C-H., Wu, L. W. & Chen, S. C., 1 1月 2003, 於: Journal of Electronic Materials. 32, 5, p. 403-406 4 p.

研究成果: Article › 同行評審

21 引文斯高帕斯（Scopus）

InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping

Wen, T. C., Chang, S. J., Su, Y. K., Wu, L. W., Kuo, C-H., Lai, W. C., Sheu, J. K. & Tsai, T. Y., 1 1月 2003, 於: Journal of Electronic Materials. 32, 5, p. 419-422 4 p.

研究成果: Article › 同行評審

10 引文斯高帕斯（Scopus）

Nitride-based blue LEDs with GaN/SiN double buffer layers

Kuo, C-H., Chang, S. J., Su, Y. K., Wang, C. K., Wu, L. W., Sheu, J. K., Wen, T. C., Lai, W. C., Tsai, J. M. & Lin, C. C., 1 11月 2003, 於: Solid-State Electronics. 47, 11, p. 2019-2022 4 p.

研究成果: Article › 同行評審

22 引文斯高帕斯（Scopus）

Nitride-based green light-emitting diodes with high temperature GaN barrier layers

Wu, L. W., Chang, S. J., Su, Y. K., Chuang, R. W., Wen, T. C., Kuo, C-H., Lai, W. C., Chang, C. S., Tsai, J. M. & Sheu, J. K., 1 8月 2003, 於: IEEE Transactions on Electron Devices. 50, 8, p. 1766-1770 5 p.

研究成果: Article › 同行評審

25 引文斯高帕斯（Scopus）

Nitride-based light emitting diodes with Si-doped In_0.23Ga_0.77N/GaN short period superlattice tunneling contact layer

Kuo, C-H., Chang, S. J., Su, Y. K., Wu, L. W., Chen, J. F., Sheu, J. K. & Tsai, J. M., 1 2月 2003, 於: IEEE Transactions on Electron Devices. 50, 2, p. 535-537 3 p.

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers

Kuo, C-H., Chang, S. J., Su, Y. K., Wu, L. W., Sheu, J. K., Wen, T. C., Lai, W. C., Tsai, J. M. & Chen, S. C., 1 1月 2003, 於: Journal of Electronic Materials. 32, 5, p. 415-418 4 p.

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

n-UV+blue/green/red white light emitting diode lamps

Kuo, C-H., Sheu, J. K., Chang, S. J., Su, Y. K., Wu, L. W., Tsai, J. M., Liu, C. H. & Wu, R. K., 4月 2003, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 42, 4 B, p. 2284-2287 4 p.

研究成果: Article › 同行評審

112 引文斯高帕斯（Scopus）

Si and Zn co-doped InGaN-GaN white light-emitting diodes

Chang, S. J., Wu, L. W., Su, Y. K., Kuo, C-H., Lai, W. C., Hsu, Y. P., Sheu, J. K., Chen, J. F. & Tsai, J. M., 1 2月 2003, 於: IEEE Transactions on Electron Devices. 50, 2, p. 519-521 3 p.

研究成果: Article › 同行評審

30 引文斯高帕斯（Scopus）

White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors

Sheu, J. K., Chang, S. J., Kuo, C-H., Su, Y. K., Wu, L. W., Lin, Y. C., Lai, W. C., Tsai, J. M., Chi, G. C. & Wu, R. K., 1 1月 2003, 於: IEEE Photonics Technology Letters. 15, 1, p. 18-20 3 p.

研究成果: Article › 同行評審

661 引文斯高帕斯（Scopus）

2002

400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

Chang, S. J., Kuo, C-H., Su, Y. K., Wu, L. W., Sheu, J. K., Wen, T. C., Lai, W. C., Chen, J. F. & Tsai, J. M., 1 7月 2002, 於: IEEE Journal on Selected Topics in Quantum Electronics. 8, 4, p. 744-748 5 p.

研究成果: Article › 同行評審

227 引文斯高帕斯（Scopus）

Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes

Wu, L. W., Chang, S. J., Wen, T. C., Su, Y. K., Chen, J. F., Lai, W. C., Kuo, C-H., Chen, C. H. & Sheu, J. K., 1 5月 2002, 於: IEEE Journal of Quantum Electronics. 38, 5, p. 446-450 5 p.

研究成果: Article › 同行評審

99 引文斯高帕斯（Scopus）

郭 政煌

研究成果

搜尋結果

郭政煌