Cheng-Huang Kuo

2022

AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Thermally Oxidized Al_xGa_{2- x}O₃Sidewalls

Wang, T. Y., Lai, W. C., Sie, S. Y., Chang, S. P., Kuo, C. H., Sheu, J. K. & Bow, J. S., 3 5月 2022, 於: ACS Omega. 7, 17, p. 15027-15036 10 p.

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2021

Deep ultraviolet algan-based light-emitting diodes with p-algan/algan superlattice hole injection structures

Wang, T. Y., Lai, W. C., Sie, S. Y., Chang, S. P., Kuo, C. H. & Sheu, J. K., 10月 2021, 於: Processes. 9, 10, 1727.

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2 引文斯高帕斯（Scopus）

2020

AlGaN-based deep ultraviolet light emitting diodes with magnesium delta-doped AlGaN last barrier

Wang, T. Y., Lai, W. C., Sie, S. Y., Chang, S. P., Wu, Y. R., Chiou, Y. Z., Kuo, C-H. & Sheu, J. K., 21 12月 2020, 於: Applied Physics Letters. 117, 25, 251101.

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12 引文斯高帕斯（Scopus）

2015

Enabling high-injection current light-emitting diodes prepared on 10-μm-thick GaN films grown by hydride vapor phase epitaxy

Chen, Y. A., Chang, C. W. & Kuo, C-H., 1 9月 2015, 於: IEEE Transactions on Electron Devices. 62, 9, p. 2913-2918 6 p., 7194755.

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1 引文斯高帕斯（Scopus）

Interruption-free growth of 10 μm-thick GaN film prepared on sputtered AlN/PSS template by hydride vapor phase epitaxy

Chen, Y. A., Kuo, C-H., Wu, J. P. & Chang, C. W., 4 7月 2015, 於: Journal of Crystal Growth. 426, p. 180-185 6 p.

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5 引文斯高帕斯（Scopus）

Low operation voltage of GaN-based LEDs with Al-doped ZnO upper contact directly on p-type GaN without insert layer

Chen, P. H., Chen, Y. A., Chang, L. C., Lai, W. C. & Kuo, C-H., 1 1月 2015, 於: Solid-State Electronics. 109, p. 29-32 4 p., 6758.

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6 引文斯高帕斯（Scopus）

Numerical Simulation and Experimental Analysis of Current Spreading Length in Nitride-Based Light-Emitting Diodes Prepared on 10-μm -Thick n-GaN Template

Chen, Y. A., Chang, C. W. & Kuo, C-H., 1 11月 2015, 於: IEEE Electron Device Letters. 36, 11, p. 1135-1137 3 p., 7268843.

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2014

Efficiency improvement of near-ultraviolet nitride-based light-emitting-diode prepared on GaN nano-rod arrays by metalorganic chemical vapor deposition

Kuo, C-H., Chen, Y. A., Wu, J. P. & Chang, L. C., 1 3月 2014, 於: IEEE Journal of Quantum Electronics. 50, 3, p. 129-132 4 p., 6702457.

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6 引文斯高帕斯（Scopus）

GaN-Based light-emitting-diode with a p-InGaN layer

Chen, P. H., Kuo, C-H., Lai, W. C., Chen, Y. A., Chang, L. C. & Chang, S. J., 1 3月 2014, 於: IEEE/OSA Journal of Display Technology. 10, 3, p. 204-207 4 p., 6679256.

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1 引文斯高帕斯（Scopus）

Nitride-based blue light-emitting diodes grown with InN/GaN matrix quantum wells

Kuo, C-H., Fu, Y. K., Chang, L. C. & Chen, Y. A., 1 4月 2014, 於: IEEE Journal of Quantum Electronics. 50, 4, p. 255-260 6 p., 6746061.

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6 引文斯高帕斯（Scopus）

Pulsed growth epitaxial method of GaN-Based light-emitting diodes on patterned SiO2AlN/sapphire template

Chen, Y. A., Kuo, C-H., Chang, L. C. & Wu, J. P., 1 10月 2014, 於: IEEE Journal of Quantum Electronics. 50, 10, p. 854-859 6 p., 6894153.

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1 引文斯高帕斯（Scopus）

Spatial correlation between efficiency and crystal structure in GaN-based light-emitting diodes prepared on high-aspect ratio patterned sapphire substrate with sputtered AlN nucleation layer

Chang, L. C., Chen, Y. A. & Kuo, C-H., 1 1月 2014, 於: IEEE Transactions on Electron Devices. 61, 7, p. 2443-2447 5 p., 6832572.

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18 引文斯高帕斯（Scopus）

Void shapes controlled by using interruption-free epitaxial lateral overgrowth of GaN films on patterned SiO2 AlN/sapphire template

Chen, Y. A., Kuo, C-H., Chang, L. C. & Wu, J. P., 1 1月 2014, 於: International Journal of Photoenergy. 2014, 621789.

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3 引文斯高帕斯（Scopus）

2013

Improved light reflectance and thermal stability of Ag-based ohmic contacts on p-type GaN with la additive

Chen, I. C., Cheng, B. Y., Ke, W. C., Kuo, C-H. & Chang, L. C., 15 3月 2013, 於: Superlattices and Microstructures. 57, p. 51-57 7 p.

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5 引文斯高帕斯（Scopus）

Localized lasing mode in GaN quasi-periodic nanopillars at room temperature

Wu, T. T., Chen, C. C., Chen, H. W., Lu, T-C., Wang, S. C. & Kuo, C-H., 7月 2013, 於: IEEE Journal on Selected Topics in Quantum Electronics. 19, 4, 6 p., 6488713.

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3 引文斯高帕斯（Scopus）

Study of the optical effects of nanostructure embedded GaN light emitting diodes formed by nanorod template overgrowth

Wang, C. Y., Lee, Y. C., Lee, P. S., Chiu, C. H., Kuo, C-H. & Wu, M. L., 31 7月 2013, 於: Thin Solid Films. 539, p. 245-250 6 p.

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1 引文斯高帕斯（Scopus）

2012

Characterization study of GaN-based epitaxial layer and light-emitting diode on nature-patterned sapphire substrate

Lin, H. Y., Chen, Y. J., Chang, C. L., Li, X. F., Kuo, C-H., Hsu, S. C. & Liu, C. Y., 28 3月 2012, 於: Journal of Materials Research. 27, 6, p. 971-977 7 p.

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8 引文斯高帕斯（Scopus）

Current spreading improvement in GaN-based light-emitting diode grown on nano-rod GaN template

Kuo, C-H., Chang, L. C. & Chou, H. M., 30 3月 2012, 於: IEEE Photonics Technology Letters. 24, 7, p. 608-610 3 p., 6134636.

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7 引文斯高帕斯（Scopus）

Non-alloyed Cr/Au Ohmic contacts to N-face and Ga-face n-GaN

Yan, L. J., Kuo, C-H., Sheu, J. K., Lee, M. L. & Tseng, W. C., 5 3月 2012, 於: Journal of Alloys and Compounds. 516, p. 38-40 3 p.

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7 引文斯高帕斯（Scopus）

2011

GaN epitaxial layers prepared on nano-patterned Si(001) substrate

Huang, C. C., Chang, S. J., Kuo, C-H., Ko, C. H., Wann, C. H., Cheng, Y. C. & Lin, W. J., 1 2月 2011, 於: Journal of Nanoscience and Nanotechnology. 11, 2, p. 1248-1251 4 p.

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Highly reflective Ag/La bilayer ohmic contacts to p-type GaN

Chen, I. C., Chen, Y. D., Hsieh, C. C., Kuo, C-H. & Chang, L. C., 8 2月 2011, 於: Journal of the Electrochemical Society. 158, 3, p. H285-H288 4 p.

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21 引文斯高帕斯（Scopus）

Improved power conversion efficiency of InGaN photovoltaic devices grown on patterned sapphire substrates

Yang, C. C., Sheu, J. K., Kuo, C-H., Huang, M. S., Tu, S. J., Huang, F. W., Lee, M. L., Yeh, Y. H., Liang, X. W. & Lai, W. C., 1 4月 2011, 於: IEEE Electron Device Letters. 32, 4, p. 536-538 3 p., 5719623.

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5 引文斯高帕斯（Scopus）

Nonpolar light emitting diode made by m-plane n-ZnO/p-GaN heterostructure

Chen, C. W., Hung, S. C., Lee, C. H., Tun, C. J., Kuo, C-H., Yang, M. D., Yeh, C. W., Wu, C. H. & Chi, G. C., 1 12月 2011, 於: Optical Materials Express. 1, 8, p. 1555-1560 6 p.

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13 引文斯高帕斯（Scopus）

Output power enhancements of nitride-based light-emitting diodes with inverted pyramid sidewalls structure

Chang, L. C., Kuo, C-H. & Kuo, C. W., 1 2月 2011, 於: Solid-State Electronics. 56, 1, p. 8-12 5 p.

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1 引文斯高帕斯（Scopus）

Regrowth of high quality heavily Si-doped nGaN utilizing nano-rod GaN template

Kuo, C-H., Chang, L. C. & Chou, H. M., 31 8月 2011, 於: Journal of the Electrochemical Society. 158, 10, p. H961-H964 4 p.

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2 引文斯高帕斯（Scopus）

Single crystalline GaN epitaxial layer prepared on nano-patterned Si(001) substrate

Huang, C. C., Chang, S. J., Kuo, C-H., Wu, C. H., Ko, C. H., Wann, C. H., Cheng, Y. C. & Lin, W. J., 4 5月 2011, 於: Journal of the Electrochemical Society. 158, 6

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6 引文斯高帕斯（Scopus）

2010

Catalyst-free ZnO nanowires grown on a-plane GaN

Chen, C. W., Pan, C. J., Tsao, F. C., Liu, Y. L., Kuo, C. W., Kuo, C-H., Chi, G. C., Chen, P. H., Lai, W. C., Hsueh, T. H., Tun, C. J., Chang, C. Y., Pearton, S. J. & Ren, F., 4 2月 2010, 於: Vacuum. 84, 6, p. 803-806 4 p.

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8 引文斯高帕斯（Scopus）

Characterization of n-gan with naturally textured surface for photoelectrochemical hydrogen generation

Liu, S. Y., Sheu, J. K., Ye, J. C., Tu, S. J., Hsu, C. K., Lee, M. L., Kuo, C-H. & Lai, W. C., 24 11月 2010, 於: Journal of the Electrochemical Society. 157, 12

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6 引文斯高帕斯（Scopus）

Dislocation reduction in nitride-based Schottky diodes by using multiple Mg_xN_y/GaN nucleation layers

Lee, K. H., Chang, P. C., Chang, S. J., Su, Y. K., Wang, Y. C., Yu, C. L. & Kuo, C-H., 1 3月 2010, 於: Thin Solid Films. 518, 10, p. 2839-2842 4 p.

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Efficiency Dependence on Degree of Localization States in GaN-Based Asymmetric Two-Step Light-Emitting Diode With a Low Indium Content InGaN Shallow Step

Kuo, C-H., Fu, Y. K., Chi, G. C. & Chang, S. J., 1 1月 2010, 於: IEEE Journal of Quantum Electronics. 46, 3, p. 391-395 5 p.

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4 引文斯高帕斯（Scopus）

Efficiency improvement of GaN-B ased light-emitting diode prepared on GaN nanorod template

Kuo, C-H., Chang, L. C., Kuo, C. W. & Chi, G. C., 15 2月 2010, 於: IEEE Photonics Technology Letters. 22, 4, p. 257-259 3 p., 5378548.

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13 引文斯高帕斯（Scopus）

Fabrication of high-power InGaN-based light-emitting diode chips on pyramidally patterned sapphire substrate

Chen, Y. J., Kuo, C-H., Tun, C. J., Hsu, S. C., Cheng, Y. J. & Liu, C. Y., 1 2月 2010, 於: Japanese Journal of Applied Physics. 49, 2 Part 1, 020201.

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13 引文斯高帕斯（Scopus）

Functional imprinting structures on GaN-based light-emitting diodes for light pattern modulation and light extraction efficiency enhancement

Tu, S. H., Wu, S. Y., Lee, Y. C., Pan, J-W., Kuo, C-H., Wang, C. M. & Chang, J. Y., 5 8月 2010, 於: Optical Review. 17, 4, p. 379-384 6 p.

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5 引文斯高帕斯（Scopus）

GaN-based LEDs with AZO:Y upper contact

Chen, P. H., Lai, W. C., Peng, L. C., Kuo, C-H., Yeh, C. L., Sheu, J. K. & Tun, C. J., 1月 2010, 於: IEEE Transactions on Electron Devices. 57, 1, p. 134-139 6 p., 5313952.

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22 引文斯高帕斯（Scopus）

GaN-based light-emitting diodes with pillar structures around the mesa region

Chen, P. H., Chang, L. C., Tsai, C. H., Lee, Y. C., Lai, W. C., Wu, M. L., Kuo, C-H. & Sheu, J. K., 13 4月 2010, 於: IEEE Journal of Quantum Electronics. 46, 7, p. 1066-1071 6 p., 5440023.

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8 引文斯高帕斯（Scopus）

GaN metal-semiconductor-metal photodetectors prepared on nanorod template

Chang, S. J., Wang, S. M., Chang, P. C., Kuo, C-H., Young, S. J. & Chen, T. P., 16 4月 2010, 於: IEEE Photonics Technology Letters. 22, 9, p. 625-627 3 p., 14.

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11 引文斯高帕斯（Scopus）

GaN schottky barrier photodetectors

Chang, S. J., Wang, S. M., Chang, P. C., Kuo, C-H., Young, S. J., Chen, T. P., Wu, S. L. & Huang, B. R., 13 8月 2010, 於: IEEE Sensors Journal. 10, 10, p. 1609-1614 6 p., 5482027.

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9 引文斯高帕斯（Scopus）

Nitride-based blue light-emitting diodes with multiple Mg_xN_y/GaN buffer layers

Fu, Y. K., Kuo, C-H., Tun, C. J. & Chang, L. C., 1 5月 2010, 於: Solid-State Electronics. 54, 5, p. 590-594 5 p.

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5 引文斯高帕斯（Scopus）

Optical properties of light emitting diodes with a cascading plasmonic grating

Wang, C. M., Tsai, Y. L., Tu, S. H., Lee, C. C., Kuo, C-H. & Chang, J. Y., 6 12月 2010, 於: Optics Express. 18, 25, p. 25608-25614 7 p.

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2 引文斯高帕斯（Scopus）

2009

AlGaN/GaN Schottky barrier photodetector with multi-Mg_xN _y/GaN buffer

Chang, S. J., Lee, K. H., Chang, P. C., Wang, Y. C., Kuo, C-H. & Wu, S. L., 1 2月 2009, 於: IEEE Sensors Journal. 9, 2, p. 87-92 6 p., 4749393.

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13 引文斯高帕斯（Scopus）

Characterization of ZnO nanowires grown on Si (100) with and without Au catalyst

Chen, J. Y., Pan, C. J., Tsao, F. C., Kuo, C-H., Chi, G. C., Pong, B. J., Chang, C. Y., Norton, D. P. & Pearton, S. J., 24 3月 2009, 於: Vacuum. 83, 7, p. 1076-1079 4 p.

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16 引文斯高帕斯（Scopus）

Dislocation reduction in GaN with double Mg_xN_y/AlN buffer layer by metal organic chemical vapor deposition

Kuo, C. W., Fu, Y. K., Kuo, C-H., Chang, L. C., Tun, C. J., Pan, C. J. & Chi, G. C., 1 1月 2009, 於: Journal of Crystal Growth. 311, 2, p. 249-253 5 p.

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11 引文斯高帕斯（Scopus）

GaN-based LEDs with mesh ITO p-contact and nanopillars

Lai, W. C., Chen, P. H., Chang, L. C., Kuo, C-H., Sheu, J. K., Tun, C. J. & Shei, S. C., 15 9月 2009, 於: IEEE Photonics Technology Letters. 21, 18, p. 1293-1295 3 p.

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2 引文斯高帕斯（Scopus）

GaN-based light-emitting diode prepared on nano-inverted pyramid GaN template

Kuo, C. W., Chang, L. C. & Kuo, C-H., 1 11月 2009, 於: IEEE Photonics Technology Letters. 21, 21, p. 1645-1647 3 p.

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3 引文斯高帕斯（Scopus）

Growth and characterization of c-plane AlGaN on γ-LiAlO₂

Tun, C. J., Kuo, C-H., Fu, Y. K., Kuo, C. W., Chou, M. M. C. & Chi, G. C., 1 7月 2009, 於: Journal of Crystal Growth. 311, 14, p. 3726-3730 5 p.

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1 引文斯高帕斯（Scopus）

Improvement of the efficiency of nitride-based light emitting diodes on nanoinverted pyramid GaN templates

Kuo, C-H., Chang, L. C., Kuo, C. W. & Tun, C. J., 10 11月 2009, 於: Journal of the Electrochemical Society. 156, 12

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3 引文斯高帕斯（Scopus）

Nitride-based asymmetric two-step light-emitting diode with In _0.08Ga_0.92N shallow step

Kuo, C-H., Fu, Y. K., Yeh, C. L., Tun, C. J., Chen, P. H., Lai, W. C. & Chang, S. J., 15 3月 2009, 於: IEEE Photonics Technology Letters. 21, 6, p. 371-373 3 p.

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2 引文斯高帕斯（Scopus）

Optical simulation and fabrication of nitride-based LEDs with the inverted pyramid sidewalls

Kuo, C. W., Lee, Y. C., Fu, Y. K., Tsai, C. H., Wu, M. L., Chi, G. C., Kuo, C-H. & Tun, C. J., 22 7月 2009, 於: IEEE Journal on Selected Topics in Quantum Electronics. 15, 4, p. 1264-1268 5 p., 5166477.

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7 引文斯高帕斯（Scopus）

Patterning periodical motif on substrates using monolayer of microspheres: Application in GaN light-emitting diodes

Chan, C. H., Hou, C. H., Huang, C. K., Chen, T. J., Tseng, S. Z., Chien, H. T., Kuo, C-H., Hsieh, K. H., Tsai, Y. L., Hsu, K. C. & Chen, C. C., 1 2月 2009, 於: Japanese journal of applied physics. 48, 2, 020212.

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16 引文斯高帕斯（Scopus）

The effect of absorption layer of different quantum well arrangement on optoelectronic characteristics of nitride-based photovoltaic cells grown by MOCVD

Fu, Y. K., Tun, C. J., Kuo, C. W., Kuo, C-H., Pan, C. J., Chi, G. C., Chen, M. C., Hong, H. F. & Lan, S. M., 1 7月 2009, 於: Physica Status Solidi (C) Current Topics in Solid State Physics. 6, SUPPL. 2

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郭 政煌

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郭政煌