Cheng-Huang Kuo

2024

Effects of Chip Size and Thermally Oxidized Al_xGa_2-xO₃ Sidewall on the Optoelectrical Characteristics of AlGaN-Based Deep Ultraviolet Micro-Light-Emitting Diodes

Wang, T. Y., Lai, W. C., Xie, Q. J., Chang, S. P., Kuo, C. H. & Sheu, J. K., 24 12月 2024, 於: ACS Applied Electronic Materials. 6, 12, p. 8757-8765 9 p.

研究成果: Article › 同行評審

開啟存取

Thermally Oxidized Al_xGa_2-xO₃/n-Al_0.6Ga_0.4N:Si Unipolar Resistive Random-Access Memory

Wang, T. Y., Lai, W. C., Xie, Q. J., Chang, S. P., Kuo, C. H. & Sheu, J. K., 28 5月 2024, 於: ACS Applied Electronic Materials. 6, 5, p. 3688-3694 7 p.

研究成果: Article › 同行評審

開啟存取

2023

The influences of AlGaN barrier epitaxy in multiple quantum wells on the optoelectrical properties of AlGaN-based deep ultra-violet light-emitting diodes

Wang, T. Y., Lai, W. C., Xie, Q. J., Yang, S. H., Chang, S. P., Kuo, C. H. & Sheu, J. K., 13 2月 2023, 於: RSC Advances. 13, 8, p. 5437-5443 7 p.

研究成果: Article › 同行評審

開啟存取

4 引文斯高帕斯（Scopus）

Wafer-scale MOCVD grown WS₂ with normally off transistor behavior and its general application on different amorphous substrates

Wu, W. C., Huang, K. N., Su, C. Y., Kei, C. C., Kuo, C. H. & Chien, C. H., 30 10月 2023, 於: Applied Physics Letters. 123, 18, 183101.

研究成果: Article › 同行評審

2022

AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Thermally Oxidized Al_xGa_{2- x}O₃Sidewalls

Wang, T. Y., Lai, W. C., Sie, S. Y., Chang, S. P., Kuo, C. H., Sheu, J. K. & Bow, J. S., 3 5月 2022, 於: ACS Omega. 7, 17, p. 15027-15036 10 p.

研究成果: Article › 同行評審

開啟存取

11 引文斯高帕斯（Scopus）

2021

Deep ultraviolet algan-based light-emitting diodes with p-algan/algan superlattice hole injection structures

Wang, T. Y., Lai, W. C., Sie, S. Y., Chang, S. P., Kuo, C. H. & Sheu, J. K., 10月 2021, 於: Processes. 9, 10, 1727.

研究成果: Article › 同行評審

開啟存取

5 引文斯高帕斯（Scopus）

2020

AlGaN-based deep ultraviolet light emitting diodes with magnesium delta-doped AlGaN last barrier

Wang, T. Y., Lai, W. C., Sie, S. Y., Chang, S. P., Wu, Y. R., Chiou, Y. Z., Kuo, C.-H. & Sheu, J. K., 21 12月 2020, 於: Applied Physics Letters. 117, 25, 251101.

研究成果: Article › 同行評審

開啟存取

21 引文斯高帕斯（Scopus）

2015

Enabling high-injection current light-emitting diodes prepared on 10-μm-thick GaN films grown by hydride vapor phase epitaxy

Chen, Y. A., Chang, C. W. & Kuo, C.-H., 1 9月 2015, 於: IEEE Transactions on Electron Devices. 62, 9, p. 2913-2918 6 p., 7194755.

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

Interruption-free growth of 10 μm-thick GaN film prepared on sputtered AlN/PSS template by hydride vapor phase epitaxy

Chen, Y. A., Kuo, C.-H., Wu, J. P. & Chang, C. W., 4 7月 2015, 於: Journal of Crystal Growth. 426, p. 180-185 6 p.

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

Low operation voltage of GaN-based LEDs with Al-doped ZnO upper contact directly on p-type GaN without insert layer

Chen, P. H., Chen, Y. A., Chang, L. C., Lai, W. C. & Kuo, C.-H., 7月 2015, 於: Solid-State Electronics. 109, p. 29-32 4 p., 6758.

研究成果: Article › 同行評審

7 引文斯高帕斯（Scopus）

Numerical Simulation and Experimental Analysis of Current Spreading Length in Nitride-Based Light-Emitting Diodes Prepared on 10-μm -Thick n-GaN Template

Chen, Y. A., Chang, C. W. & Kuo, C.-H., 1 11月 2015, 於: Ieee Electron Device Letters. 36, 11, p. 1135-1137 3 p., 7268843.

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

2014

Efficiency improvement of near-ultraviolet nitride-based light-emitting-diode prepared on GaN nano-rod arrays by metalorganic chemical vapor deposition

Kuo, C.-H., Chen, Y. A., Wu, J. P. & Chang, L. C., 3月 2014, 於: IEEE Journal of Quantum Electronics. 50, 3, p. 129-132 4 p., 6702457.

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

GaN-Based light-emitting-diode with a p-InGaN layer

Chen, P. H., Kuo, C.-H., Lai, W. C., Chen, Y. A., Chang, L. C. & Chang, S. J., 3月 2014, 於: IEEE/OSA Journal of Display Technology. 10, 3, p. 204-207 4 p., 6679256.

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

Nitride-based blue light-emitting diodes grown with InN/GaN matrix quantum wells

Kuo, C.-H., Fu, Y. K., Chang, L. C. & Chen, Y. A., 1 4月 2014, 於: IEEE Journal of Quantum Electronics. 50, 4, p. 255-260 6 p., 6746061.

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

Pulsed growth epitaxial method of GaN-Based light-emitting diodes on patterned SiO₂AlN/sapphire template

Chen, Y. A., Kuo, C.-H., Chang, L. C. & Wu, J. P., 1 10月 2014, 於: IEEE Journal of Quantum Electronics. 50, 10, p. 854-859 6 p., 6894153.

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

Spatial correlation between efficiency and crystal structure in GaN-based light-emitting diodes prepared on high-aspect ratio patterned sapphire substrate with sputtered AlN nucleation layer

Chang, L. C., Chen, Y. A. & Kuo, C.-H., 1 1月 2014, 於: IEEE Transactions on Electron Devices. 61, 7, p. 2443-2447 5 p., 6832572.

研究成果: Article › 同行評審

21 引文斯高帕斯（Scopus）

Void shapes controlled by using interruption-free epitaxial lateral overgrowth of GaN films on patterned SiO₂ AlN/sapphire template

Chen, Y. A., Kuo, C.-H., Chang, L. C. & Wu, J. P., 2014, 於: International Journal of Photoenergy. 2014, 621789.

研究成果: Article › 同行評審

開啟存取

6 引文斯高帕斯（Scopus）

2013

Improved light reflectance and thermal stability of Ag-based ohmic contacts on p-type GaN with la additive

Chen, I. C., Cheng, B. Y., Ke, W. C., Kuo, C.-H. & Chang, L. C., 2013, 於: Superlattices and Microstructures. 57, p. 51-57 7 p.

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

Localized lasing mode in GaN quasi-periodic nanopillars at room temperature

Wu, T. T., Chen, C. C., Chen, H. W., Lu, T.-C., Wang, S. C. & Kuo, C.-H., 7月 2013, 於: IEEE Journal on Selected Topics in Quantum Electronics. 19, 4, 6 p., 6488713.

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

Study of the optical effects of nanostructure embedded GaN light emitting diodes formed by nanorod template overgrowth

Wang, C. Y., Lee, Y. C., Lee, P. S., Chiu, C. H., Kuo, C.-H. & Wu, M. L., 31 7月 2013, 於: Thin Solid Films. 539, p. 245-250 6 p.

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

2012

Characterization study of GaN-based epitaxial layer and light-emitting diode on nature-patterned sapphire substrate

Lin, H. Y., Chen, Y. J., Chang, C. L., Li, X. F., Kuo, C.-H., Hsu, S. C. & Liu, C. Y., 28 3月 2012, 於: Journal of Materials Research. 27, 6, p. 971-977 7 p.

研究成果: Article › 同行評審

11 引文斯高帕斯（Scopus）

Current spreading improvement in GaN-based light-emitting diode grown on nano-rod GaN template

Kuo, C.-H., Chang, L. C. & Chou, H. M., 30 3月 2012, 於: IEEE Photonics Technology Letters. 24, 7, p. 608-610 3 p., 6134636.

研究成果: Article › 同行評審

7 引文斯高帕斯（Scopus）

Non-alloyed Cr/Au Ohmic contacts to N-face and Ga-face n-GaN

Yan, L. J., Kuo, C.-H., Sheu, J. K., Lee, M. L. & Tseng, W. C., 5 3月 2012, 於: Journal of Alloys and Compounds. 516, p. 38-40 3 p.

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

2011

GaN epitaxial layers prepared on nano-patterned Si(001) substrate

Huang, C. C., Chang, S. J., Kuo, C.-H., Ko, C. H., Wann, C. H., Cheng, Y. C. & Lin, W. J., 1 2月 2011, 於: Journal of Nanoscience and Nanotechnology. 11, 2, p. 1248-1251 4 p.

研究成果: Article › 同行評審

Highly reflective Ag/La bilayer ohmic contacts to p-type GaN

Chen, I. C., Chen, Y. D., Hsieh, C. C., Kuo, C.-H. & Chang, L. C., 8 2月 2011, 於: Journal of the Electrochemical Society. 158, 3, p. H285-H288 4 p.

研究成果: Article › 同行評審

21 引文斯高帕斯（Scopus）

Improved power conversion efficiency of InGaN photovoltaic devices grown on patterned sapphire substrates

Yang, C. C., Sheu, J. K., Kuo, C.-H., Huang, M. S., Tu, S. J., Huang, F. W., Lee, M. L., Yeh, Y. H., Liang, X. W. & Lai, W. C., 4月 2011, 於: Ieee Electron Device Letters. 32, 4, p. 536-538 3 p., 5719623.

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

Nonpolar light emitting diode made by m-plane n-ZnO/p-GaN heterostructure

Chen, C. W., Hung, S. C., Lee, C. H., Tun, C. J., Kuo, C.-H., Yang, M. D., Yeh, C. W., Wu, C. H. & Chi, G. C., 1 12月 2011, 於: Optical Materials Express. 1, 8, p. 1555-1560 6 p.

研究成果: Article › 同行評審

15 引文斯高帕斯（Scopus）

Output power enhancements of nitride-based light-emitting diodes with inverted pyramid sidewalls structure

Chang, L. C., Kuo, C.-H. & Kuo, C. W., 1 2月 2011, 於: Solid-State Electronics. 56, 1, p. 8-12 5 p.

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

Regrowth of high quality heavily Si-doped nGaN utilizing nano-rod GaN template

Kuo, C.-H., Chang, L. C. & Chou, H. M., 2011, 於: Journal of the Electrochemical Society. 158, 10, p. H961-H964 4 p.

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

Single crystalline GaN epitaxial layer prepared on nano-patterned Si(001) substrate

Huang, C. C., Chang, S. J., Kuo, C.-H., Wu, C. H., Ko, C. H., Wann, C. H., Cheng, Y. C. & Lin, W. J., 2011, 於: Journal of the Electrochemical Society. 158, 6, p. H626-H629

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

2010

Catalyst-free ZnO nanowires grown on a-plane GaN

Chen, C. W., Pan, C. J., Tsao, F. C., Liu, Y. L., Kuo, C. W., Kuo, C.-H., Chi, G. C., Chen, P. H., Lai, W. C., Hsueh, T. H., Tun, C. J., Chang, C. Y., Pearton, S. J. & Ren, F., 4 2月 2010, 於: Vacuum. 84, 6, p. 803-806 4 p.

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

Characterization of n-gan with naturally textured surface for photoelectrochemical hydrogen generation

Liu, S. Y., Sheu, J. K., Ye, J. C., Tu, S. J., Hsu, C. K., Lee, M. L., Kuo, C.-H. & Lai, W. C., 2010, 於: Journal of the Electrochemical Society. 157, 12, p. H1106-H1109

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

Dislocation reduction in nitride-based Schottky diodes by using multiple Mg_xN_y/GaN nucleation layers

Lee, K. H., Chang, P. C., Chang, S. J., Su, Y. K., Wang, Y. C., Yu, C. L. & Kuo, C.-H., 1 3月 2010, 於: Thin Solid Films. 518, 10, p. 2839-2842 4 p.

研究成果: Article › 同行評審

Efficiency Dependence on Degree of Localization States in GaN-Based Asymmetric Two-Step Light-Emitting Diode With a Low Indium Content InGaN Shallow Step

Kuo, C.-H., Fu, Y. K., Chi, G. C. & Chang, S. J., 3月 2010, 於: IEEE Journal of Quantum Electronics. 46, 3, p. 391-395 5 p.

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

Efficiency improvement of GaN-B ased light-emitting diode prepared on GaN nanorod template

Kuo, C.-H., Chang, L. C., Kuo, C. W. & Chi, G. C., 15 2月 2010, 於: IEEE Photonics Technology Letters. 22, 4, p. 257-259 3 p., 5378548.

研究成果: Article › 同行評審

13 引文斯高帕斯（Scopus）

Fabrication of high-power InGaN-based light-emitting diode chips on pyramidally patterned sapphire substrate

Chen, Y. J., Kuo, C.-H., Tun, C. J., Hsu, S. C., Cheng, Y. J. & Liu, C. Y., 2月 2010, 於: Japanese Journal of Applied Physics. 49, 2 Part 1, 020201.

研究成果: Article › 同行評審

開啟存取

14 引文斯高帕斯（Scopus）

Functional imprinting structures on GaN-based light-emitting diodes for light pattern modulation and light extraction efficiency enhancement

Tu, S. H., Wu, S. Y., Lee, Y. C., Pan, J.-W., Kuo, C.-H., Wang, C. M. & Chang, J. Y., 2010, 於: Optical Review. 17, 4, p. 379-384 6 p.

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

GaN-based LEDs with AZO:Y upper contact

Chen, P. H., Lai, W. C., Peng, L. C., Kuo, C.-H., Yeh, C. L., Sheu, J. K. & Tun, C. J., 1月 2010, 於: IEEE Transactions on Electron Devices. 57, 1, p. 134-139 6 p., 5313952.

研究成果: Article › 同行評審

23 引文斯高帕斯（Scopus）

GaN-based light-emitting diodes with pillar structures around the mesa region

Chen, P. H., Chang, L. C., Tsai, C. H., Lee, Y. C., Lai, W. C., Wu, M. L., Kuo, C.-H. & Sheu, J. K., 13 4月 2010, 於: IEEE Journal of Quantum Electronics. 46, 7, p. 1066-1071 6 p., 5440023.

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

GaN metal-semiconductor-metal photodetectors prepared on nanorod template

Chang, S. J., Wang, S. M., Chang, P. C., Kuo, C.-H., Young, S. J. & Chen, T. P., 2010, 於: IEEE Photonics Technology Letters. 22, 9, p. 625-627 3 p., 14.

研究成果: Article › 同行評審

11 引文斯高帕斯（Scopus）

GaN schottky barrier photodetectors

Chang, S. J., Wang, S. M., Chang, P. C., Kuo, C.-H., Young, S. J., Chen, T. P., Wu, S. L. & Huang, B. R., 2010, 於: IEEE Sensors Journal. 10, 10, p. 1609-1614 6 p., 5482027.

研究成果: Article › 同行評審

11 引文斯高帕斯（Scopus）

Nitride-based blue light-emitting diodes with multiple Mg_xN_y/GaN buffer layers

Fu, Y. K., Kuo, C.-H., Tun, C. J. & Chang, L. C., 5月 2010, 於: Solid-State Electronics. 54, 5, p. 590-594 5 p.

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

Optical properties of light emitting diodes with a cascading plasmonic grating

Wang, C. M., Tsai, Y. L., Tu, S. H., Lee, C. C., Kuo, C.-H. & Chang, J. Y., 6 12月 2010, 於: Optics Express. 18, 25, p. 25608-25614 7 p.

研究成果: Article › 同行評審

開啟存取

2 引文斯高帕斯（Scopus）

2009

AlGaN/GaN Schottky barrier photodetector with multi-Mg_xN _y/GaN buffer

Chang, S. J., Lee, K. H., Chang, P. C., Wang, Y. C., Kuo, C.-H. & Wu, S. L., 1 2月 2009, 於: IEEE Sensors Journal. 9, 2, p. 87-92 6 p., 4749393.

研究成果: Article › 同行評審

14 引文斯高帕斯（Scopus）

Characterization of ZnO nanowires grown on Si (100) with and without Au catalyst

Chen, J. Y., Pan, C. J., Tsao, F. C., Kuo, C.-H., Chi, G. C., Pong, B. J., Chang, C. Y., Norton, D. P. & Pearton, S. J., 24 3月 2009, 於: Vacuum. 83, 7, p. 1076-1079 4 p.

研究成果: Article › 同行評審

18 引文斯高帕斯（Scopus）

Dislocation reduction in GaN with double Mg_xN_y/AlN buffer layer by metal organic chemical vapor deposition

Kuo, C. W., Fu, Y. K., Kuo, C.-H., Chang, L. C., Tun, C. J., Pan, C. J. & Chi, G. C., 1 1月 2009, 於: Journal of Crystal Growth. 311, 2, p. 249-253 5 p.

研究成果: Article › 同行評審

11 引文斯高帕斯（Scopus）

GaN-based LEDs with mesh ITO p-contact and nanopillars

Lai, W. C., Chen, P. H., Chang, L. C., Kuo, C.-H., Sheu, J. K., Tun, C. J. & Shei, S. C., 15 9月 2009, 於: IEEE Photonics Technology Letters. 21, 18, p. 1293-1295 3 p.

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

GaN-based light-emitting diode prepared on nano-inverted pyramid GaN template

Kuo, C. W., Chang, L. C. & Kuo, C.-H., 1 11月 2009, 於: IEEE Photonics Technology Letters. 21, 21, p. 1645-1647 3 p.

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

Growth and characterization of c-plane AlGaN on γ-LiAlO₂

Tun, C. J., Kuo, C.-H., Fu, Y. K., Kuo, C. W., Chou, M. M. C. & Chi, G. C., 1 7月 2009, 於: Journal of Crystal Growth. 311, 14, p. 3726-3730 5 p.

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

Improvement of the efficiency of nitride-based light emitting diodes on nanoinverted pyramid GaN templates

Kuo, C.-H., Chang, L. C., Kuo, C. W. & Tun, C. J., 2009, 於: Journal of the Electrochemical Society. 156, 12, p. H986-H989

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

郭 政煌

研究成果

搜尋結果

郭政煌