Chao-Hsin Chien

Article

Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices

Hsu, C. C., Chi, W. C., Tsai, Y. H., Tsai, M. L., Wang, S. Y., Chou, C. H., Zhang, J. L., Luo, G. L. & Chien, C-H., 1 9月 2018, 於: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 36, 5, 051204.

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1 引文斯高帕斯（Scopus）

Interface Characterization of HfO₂/GaSb MOS Capacitors with Ultrathin Equivalent Oxide Thickness by Using Hydrogen Plasma Treatment

Tsai, M. L., Ko, J. Y., Wang, S. Y. & Chien, C-H., 1 9月 2016, 於: IEEE Transactions on Electron Devices. 63, 9, p. 3459-3465 7 p., 7515183.

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9 引文斯高帕斯（Scopus）

Junction and device characteristics of gate-last ge p- and n-MOSFETs with ALD-Al₂O₃ gate dielectric

Cheng, C. C., Chien, C-H., Luo, G. L., Lin, C. L., Chen, H. S., Liu, J. C., Kei, C. C., Hsiao, C. N. & Chang, C. Y., 16 7月 2009, 於: IEEE Transactions on Electron Devices. 56, 8, p. 1681-1689 9 p.

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16 引文斯高帕斯（Scopus）

Low-leakage tetragonal ZrO ₂ (EOT < 1 nm) with in situ plasma interfacial passivation on germanium

Chou, C-H., Chang, H. H., Hsu, C. C., Yeh, W. K. & Chien, C-H., 1 2月 2016, 於: IEEE Electron Device Letters. 37, 2, p. 138-141 4 p., 7358074.

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13 引文斯高帕斯（Scopus）

Low-pressure crystallization of sol-gel-derived PbZr _0.52 Ti _0.48 O ₃ thin films at low temperature for low-voltage operation

Wang, D. Y., Chien, C-H., Chang, C. Y., Leu, C. C., Yang, J. Y., Chuang, S. H. & Huang, T. Y., 5月 2003, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 42, 5 A, p. 2756-2758 3 p.

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4 引文斯高帕斯（Scopus）

Low-temperature growth of polycrystalline Ge films on SiO₂ substrate by HDPCVD

Yang, M. J., Shieh, J., Hsu, S. L., Huang, I. J., Leu, C. C., Shen, S. W., Huang, T. Y., Lehnen, P. & Chien, C-H., 2 6月 2005, 於: Electrochemical and Solid-State Letters. 8, 5

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7 引文斯高帕斯（Scopus）

Low-temperature polycrystalline silicon thin-film flash memory with hafnium silicate

Lin, Y. H., Chien, C-H., Chou, T. H., Chao, T-S. & Lei, T. F., 1 3月 2007, 於: IEEE Transactions on Electron Devices. 54, 3, p. 531-536 6 p.

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27 引文斯高帕斯（Scopus）

Mechanism of nitrogen coimplant for suppressing boron penetration in p⁺-polycrystalline silicon gate of p metal-oxide semiconductor field effect transistor

Chao, T-S., Liaw, M. C., Chu, C. H., Chang, C. Y., Chien, C-H., Hao, C. P. & Lei, T. F., 16 9月 1996, 於: Applied Physics Letters. 69, 12, p. 1781-1782 2 p.

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28 引文斯高帕斯（Scopus）

Microwave annealing for NiSiGe Schottky junction on SiGe P-channel

Lin, Y. H., Tsai, Y. H., Hsu, C. C., Luo, G. L., Lee, Y. J. & Chien, C-H., 1 1月 2015, 於: Materials. 8, 11, p. 7519-7523 5 p.

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1 引文斯高帕斯（Scopus）

Nanoscale 2-bit/cell HfO ₂ nanocrystal flash memory

Lin, Y. H. & Chien, C-H., 1 3月 2012, 於: IEEE Transactions on Nanotechnology. 11, 2, p. 412-417 6 p., 6099626.

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8 引文斯高帕斯（Scopus）

Neuro-Inspired-in-Memory Computing Using Charge-Trapping MemTransistor on Germanium as Synaptic Device

Chou, Y. C., Tsai, C. W., Yi, C. Y., Chung, W. H., Wang, S. Y. & Chien, C-H., 9月 2020, 於: IEEE Transactions on Electron Devices. 67, 9, p. 3605-3609 5 p., 9153812.

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4 引文斯高帕斯（Scopus）

Nickel silicide formation using pulsed laser annealing for nMOSFET performance improvement

Chen, H. Y., Lin, C. Y., Chen, M. C., Huang, C. C. & Chien, C-H., 1 8月 2011, 於: Journal of the Electrochemical Society. 158, 8

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6 引文斯高帕斯（Scopus）

Nonvolatile flash memory devices using CeO₂ nanocrystal trapping layer for two-bit per cell applications

Yang, S. M., Chien, C-H., Huang, J. J. & Lei, T. F., 6 6月 2007, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 46, 6 A, p. 3291-3295 5 p.

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12 引文斯高帕斯（Scopus）

Novel two-bit HfO₂ nanocrystal nonvolatile flash memory

Lin, Y. H., Chien, C-H., Lin, C. T., Chang, C. Y. & Lei, T. F., 1 4月 2006, 於: IEEE Transactions on Electron Devices. 53, 4, p. 782-789 8 p.

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42 引文斯高帕斯（Scopus）

Oxide thickness dependence of plasma charging damage

Lin, H-C., Chen, C. C., Wang, M. F., Hsien, S. K., Chien, C-H., Huang, T. Y. & Chang, C. Y., 1 1月 1999, 於: Microelectronics Reliability. 39, 3, p. 357-364 8 p.

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1 引文斯高帕斯（Scopus）

Pentacene-based thin-film transistors with multiwalled carbon nanotube source and drain electrodes

Chang, C. H., Chien, C-H. & Yang, J. Y., 31 8月 2007, 於: Applied Physics Letters. 91, 8, 083502.

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29 引文斯高帕斯（Scopus）

Performance and reliability of poly-Si TFTs on FSG buffer layer

Wang, S. D., Chang, T. Y., Chien, C-H., Lo, W. H., Sang, J. Y., Lee, J. W. & Lei, T. F., 1 7月 2005, 於: IEEE Electron Device Letters. 26, 7, p. 467-469 3 p.

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12 引文斯高帕斯（Scopus）

Phase-separation phenomenon of NiGePt alloy on n-Ge by microwave annealing

Hsu, C. C., Lin, K. L., Chi, W. C., Chou, C. H., Luo, G. L., Lee, Y. J. & Chien, C-H., 30 4月 2018, 於: Journal of Alloys and Compounds. 743, p. 262-267 6 p.

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2 引文斯高帕斯（Scopus）

Photovoltaic effect on the conductive atomic force microscopic characterization of thin dielectric films

Chang, M. N., Chen, C. Y., Yang, M. J. & Chien, C-H., 6 10月 2006, 於: Applied Physics Letters. 89, 13, 133109.

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6 引文斯高帕斯（Scopus）

Plasma-induced charging damage in ultrathin (3-nm) gate oxides

Chen, C. C., Lin, H-C., Chang, C. Y., Liang, M. S., Chien, C-H., Hsien, S. K., Huang, T. Y. & Chao, T-S., 1 7月 2000, 於: IEEE Transactions on Electron Devices. 47, 7, p. 1355-1360 6 p.

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18 引文斯高帕斯（Scopus）

Properties of Ge films grown through inductively coupled plasma chemical vapor deposition on SiO₂ substrates

Yang, M. J., Chien, C-H., Shen, C. Y. & Huang, T. Y., 9 5月 2008, 於: Journal of the Electrochemical Society. 155, 6

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1 引文斯高帕斯（Scopus）

Properties of Pt/SrBi ₂ Ta ₂ O ₉ /BL/Si MFIS structures containing HfO ₂ , SiO ₂ , and Si ₃ N ₄ buffer layers

Leu, C. C., Leu, C. F., Chien, C-H., Yang, M. J., Huang, R. H., Lin, C. H. & Hsu, F. Y., 23 3月 2007, 於: Electrochemical and Solid-State Letters. 10, 5, p. 25-28 4 p.

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6 引文斯高帕斯（Scopus）

Pt nanocrystalline interfacial layer in an SBT/Pt/Ti ferroelectric capacitor

Leu, C. C., Chien, C-H., Hsu, C. C., Leu, C. F., Hsu, F. Y. & Hu, C. T., 17 12月 2004, 於: Electrochemical and Solid-State Letters. 7, 11

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1 引文斯高帕斯（Scopus）

Reliability of strained SiGe channel p-channel metal-oxide-semiconductor field-effect transistors with ultra-thin (EOT = 3.1nm) N ₂ O-annealed SiN gate dielectric

Chen, C. W., Chien, C-H., Chen, Y. C., Hsu, S. L. & Chang, C. Y., 6月 2005, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44, 6 A, p. 3848-3853 6 p.

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1 引文斯高帕斯（Scopus）

Reliability of ultrathin gate oxides for ULSI devices

Chang, C. Y., Chen, C. C., Lin, H-C., Liang, M. S., Chien, C-H. & Huang, T. Y., 1 1月 1999, 於: Microelectronics Reliability. 39, 5, p. 553-566 14 p.

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16 引文斯高帕斯（Scopus）

Resist-related damage on ultrathin gate oxide during plasma ashing

Chien, C-H., Chang, C. Y., Lin, H-C., Chang, T. F., Chiou, S. G., Chen, L. P. & Huang, T. Y., 1 2月 1997, 於: IEEE Electron Device Letters. 18, 2, p. 33-35 3 p.

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22 引文斯高帕斯（Scopus）

Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors

Zhang, X., Guo, H., Lin, H. Y., Cheng, C. C., Ko, C. H., Wann, C. H., Luo, G. L., Chang, C-Y., Chien, C-H., Han, Z. Y., Huang, S. C., Chin, H. C., Gong, X., Koh, S. M., Lim, P. S. Y. & Yeo, Y. C., 1 1月 2011, 於: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29, 3, 032209.

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11 引文斯高帕斯（Scopus）

Sinter-free transferring of anodized TiO₂ nanotube-array onto a flexible and transparent sheet for dye-sensitized solar cells

Kuo, Y. Y. & Chien, C-H., 28 2月 2013, 於: Electrochimica Acta. 91, p. 337-343 7 p.

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17 引文斯高帕斯（Scopus）

Studies on damage removing efficiency of B11+ and BF+2 implanted Si0.84Ge0.16 epilayers by rapid thermal annealing

Chen, L. P., Chou, T. C., Chien, C-H. & Chang, C. Y., 1 12月 1995, 於: Applied Physics Letters. 68, 2, p. 232-234 3 p.

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9 引文斯高帕斯（Scopus）

Study of E-Mode AlGaN/GaN MIS-HEMT with La-silicate Gate Insulator for Power Applications

Huang, K. N., Lin, Y. C., Lin, J. C., Hsu, C. C., Lee, J. H., Wu, C. H., Yao, J. N., Hsu, H-T., Nagarajan, V., Kakushima, K., Tsutsui, K., Iwai, H., Chien, C-H. & Chang, E. Y., 2月 2020, 於: Journal of Electronic Materials. 49, 2, p. 1348-1353 6 p.

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2 引文斯高帕斯（Scopus）

Study of high-ge-content Si0.16Ge0.84 gate stack by low pressure oxidation

Lee, W. L., Zhang, J. L., Tsai, M. L., Wang, S. Y., Luo, G. L. & Chien, C. H., 1月 2018, 於: ECS Journal of Solid State Science and Technology. 7, 2, p. P73-P76

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Study of the band alignment between atomic-layer-deposited high-κ dielectrics and MoS₂ film

Chung, Y. Y., Tsai, M. L., Ho, Y. T., Tseng, Y. C. & Chien, C. H., 1月 2018, 於: ECS Journal of Solid State Science and Technology. 7, 4, p. N46-N50

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2 引文斯高帕斯（Scopus）

Study of the erase mechanism of MANOS (Metal/Al₂O₃/ SiN/SiO₂/Si) device

Lai, S. C., Lue, H. T., Hsieh, J. Y., Yang, M. J., Chiou, Y. K., Wu, C. W., Wu, T. B., Luo, G. L., Chien, C-H., Lai, E. K., Hsieh, K. Y., Liu, R. & Lu, C. Y., 1 7月 2007, 於: IEEE Electron Device Letters. 28, 7, p. 643-645 3 p.

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17 引文斯高帕斯（Scopus）

Study of thermal stability of HfO_xN_y/Ge capacitors using postdeposition annealing and NH₃ plasma pretreatment

Cheng, C. C., Chien, C-H., Luo, G. L., Yang, C. H., Kuo, M. L., Lin, J. H., Tseng, C. K. & Chang, C. Y., 11 6月 2007, 於: Journal of the Electrochemical Society. 154, 7

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21 引文斯高帕斯（Scopus）

Study of thermal stability of nickel monogermanide on single- And polycrystalline germanium substrates

Hsu, S. L., Chien, C-H., Yang, M. J., Huang, R. H., Leu, C. C., Shen, S. W. & Yang, T. H., 13 9月 2005, 於: Applied Physics Letters. 86, 25, p. 1-3 3 p., 251906.

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44 引文斯高帕斯（Scopus）

Study of tri-gate AlGaN/GaN MOS-HEMTs for power application

Huang, K. N., Lin, Y. C., Lee, J. H., Hsu, C. C., Yao, J. N., Wu, C. Y., Chien, C. H. & Chang, E. Y., 11月 2020, 於: Micro and Nano Engineering. 9, 100073.

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3 引文斯高帕斯（Scopus）

Suppressing phosphorus diffusion in germanium by carbon incorporation

Luo, G., Cheng, C. C., Huang, C. Y., Hsu, S. L., Chien, C-H., Ni, W. X. & Chang, C. Y., 24 11月 2005, 於: Electronics Letters. 41, 24, p. 1354-1355 2 p.

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13 引文斯高帕斯（Scopus）

Suppression of boron penetration in P⁺-poly-Si gate metal-oxide-semiconductor transistor using nitrogen implantation

Chao, T-S., Chien, C-H., Hao, C. P., Liaw, M. C., Chu, C. H., Chang, C. Y., Lei, T. F., Sun, W. T. & Hsu, C. H., 3月 1997, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 36, 3 SUPPL. B, p. 1364-1367 4 p.

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12 引文斯高帕斯（Scopus）

Temperature-accelerated dielectric breakdown in ultrathin gate oxides

Chen, C. C., Chang, C. Y., Chien, C-H., Huang, T. Y., Lin, H-C. & Liang, M. S., 14 6月 1999, 於: Applied Physics Letters. 74, 24, p. 3708-3710 3 p.

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9 引文斯高帕斯（Scopus）

The annihilation of threading dislocations in the germanium epitaxially grown within the silicon nanoscale trenches

Luo, G. L., Huang, S. C., Ko, C. H., Wann, C. H., Chung, C. T., Han, Z. Y., Cheng, C. C., Chang, C. Y., Lin, H. Y. & Chien, C-H., 7 8月 2009, 於: Journal of the Electrochemical Society. 156, 9

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9 引文斯高帕斯（Scopus）

The characteristics of hole trapping in HfO₂/SiO₂ gate dielectrics with TiN gate electrode

Lu, W. T., Lin, P. C., Huang, T. Y., Chien, C-H., Yang, M. J., Huang, I. J. & Lehnen, P., 18 10月 2004, 於: Applied Physics Letters. 85, 16, p. 3525-3527 3 p.

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41 引文斯高帕斯（Scopus）

The effect of pulsed laser annealing on the nickel silicide formation

Chen, H. Y., Lin, C. Y., Huang, C. C. & Chien, C-H., 1 1月 2010, 於: Microelectronic Engineering. 87, 12, p. 2540-2543 4 p.

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10 引文斯高帕斯（Scopus）

The effects of low-pressure rapid thermal post-annealing on the properties of (Ba, Sr)TiO₃ thin films deposited by liquid source misted chemical deposition

Yang, M. J., Chien, C-H., Leu, C. C., Zhang, R. J., Wu, S. C., Huang, T. Y. & Tseng, T-Y., 1 12月 2001, 於: Japanese Journal of Applied Physics, Part 2: Letters. 40, 12 A, p. L1333-L1335

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1 引文斯高帕斯（Scopus）

Thermochemical reaction of ZrO_x(N_y) interfaces on Ge and Si substrates

Cheng, C. C., Chien, C-H., Lin, J. H., Chang, C. Y., Luo, G. L., Yang, C. H. & Hsu, S. L., 14 7月 2006, 於: Applied Physics Letters. 89, 1, 012905.

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10 引文斯高帕斯（Scopus）

The role of a resist during O₂ plasma ashing and its impact on the reliability evaluation of ultrathin gate oxides

Chien, C-H., Chang, C. Y., Lin, H-C., Chang, T. F., Hsien, S. K., Tseng, H. C., Chiou, S. G. & Huang, T. Y., 7月 1997, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 36, 7 SUPPL. B, p. 4866-4873 8 p.

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The role of resist for ultrathin gate oxide degradation during O₂ plasma ashing

Chien, C-H., Chang, C. Y., Lin, H-C., Chiou, S. G., Huang, T. Y., Chang, T. F. & Hsien, S. K., 1 5月 1997, 於: IEEE Electron Device Letters. 18, 5, p. 203-205 3 p.

研究成果: Article › 同行評審