Chao-Hsin Chien

Article

Experimentally Determining the Top and Edge Contact Resistivities of Two-step Sulfurization Nb-Doped MoS2 Films Using the Transmission Line Measurement

Chung, Y. Y., Li, C. F., Lin, C. T., Ho, Y. T. & Chien, C. H., 1 1月 2019, (Accepted/In press) 於: IEEE Electron Device Letters.

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

Experimental Realization of a Ternary-Phase Alloy Through Microwave-Activated Annealing for Ge Schottky pMOSFETs

Hsu, C. C., Chi, W. C., Tsai, Y. H., Chou, C. H., Chen, C. W., Chien, H. P., Chuang, S. S., Luo, G. L., Lee, Y. J. & Chien, C. H., 1 7月 2016, 於: IEEE Transactions on Electron Devices. 63, 7, p. 2714-2721 8 p., 7484321.

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

Experimental Realization of Thermal Stability Enhancement of Nickel Germanide Alloy by Using TiN Metal Capping

Chou, C-H., Tsai, Y. H., Hsu, C. C., Jau, Y. H., Lin, Y. H., Yeh, W. K. & Chien, C-H., 1 5月 2017, 於: IEEE Transactions on Electron Devices. 64, 5, p. 2314-2320 7 p., 7885604.

研究成果: Article › 同行評審

7 引文斯高帕斯（Scopus）

Fabricating a n⁺-Ge contact with ultralow specific contact resistivity by introducing a PtGe alloy as a contact metal

Hsu, C. C., Chou, C. H., Wang, S. Y., Chi, W. C., Chien, C. H. & Luo, G. L., 14 9月 2015, 於: Applied Physics Letters. 107, 11, 113503.

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

Fabrication of high-sensitivity polycrystalline silicon nanowire field-effect transistor ph sensor using conventional complementary metal-oxide-semiconductor technology

Chen, H. Y., Lin, C. Y., Chen, M. C., Huang, C. C. & Chien, C-H., 1 1月 2011, 於: Japanese journal of applied physics. 50, 4 PART 2, 04DL05.

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

First Experimental Demonstration and Mechanism of Abnormal Palladium Diffusion Induced by Excess Interstitial Ge

Chou, C. H., Shih, A. S., Yu, S. C., Lin, Y. H., Tsai, Y. H., Lin, C-Y., Yeh, W. K. & Chien, C-H., 1 11月 2018, 於: IEEE Electron Device Letters. 39, 11, p. 1632-1635 4 p., 8470143.

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

Five-element circuit model using linear-regression method to correct the admittance measurement of metal-oxide-semiconductor capacitor

Cheng, C. C., Chien, C-H., Luo, G. L., Liu, J. C., Chen, Y. C., Chang, Y. F., Wang, S. Y., Kei, C. C., Hsiao, C. N. & Chang, C. Y., 17 2月 2009, 於: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27, 1, p. 130-133 4 p.

研究成果: Article › 同行評審

15 引文斯高帕斯（Scopus）

Fully depleted GeOI-channel junctionless pMOSFET with a low-resistance-raised NiGe alloy S/D

Lee, W. L., Hsu, C. C., Chung, C. T., Lu, Y. H., Luo, G. L. & Chien, C-H., 1 1月 2017, 於: ECS Journal of Solid State Science and Technology. 6, 8, p. P507-P511

研究成果: Article › 同行評審

Functionalized single-walled carbon-nanotube-blended P3HT-based thin-film transistors with multiwalled carbon-nanotube source and drain electrodes

Chang, C. H. & Chien, C-H., 1 10月 2011, 於: IEEE Electron Device Letters. 32, 10, p. 1457-1459 3 p., 6012504.

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

GaN-based mini-LED matrix applied to multi-functional forward lighting

Nguyen, Q. K., Lin, Y. J., Sun, C., Lee, X. H., Lin, S. K., Wu, C. S., Yang, T. H., Wu, T. L., Lee, T. X., Chien, C. H., Yu, Y. W. & Sun, C. C., 12月 2022, 於: Scientific reports. 12, 1, 6444.

研究成果: Article › 同行評審

開啟存取

Ge epitaxial growth on GaAs substrates for application to Ge-source/drain GaAs MOSFETs

Luo, G. L., Han, Z. Y., Chien, C-H., Ko, C. H., Wann, C. H., Lin, H. Y., Shen, Y. L., Chung, C. T., Huang, S. C., Cheng, C. C. & Chang, C. Y., 1 1月 2010, 於: Journal of the Electrochemical Society. 157, 1

研究成果: Article › 同行評審

17 引文斯高帕斯（Scopus）

Germanium N and P multifin field-effect transistors with high-performance germanium (Ge)p⁺n and n⁺p heterojunctions formed on si substrate

Chen, C. W., Chung, C. T., Tzeng, J. Y., Li, P. H., Chang, P. S., Chien, C-H. & Luo, G. L., 3 4月 2013, 於: IEEE Transactions on Electron Devices. 60, 4, p. 1334-1341 8 p., 6482668.

研究成果: Article › 同行評審

12 引文斯高帕斯（Scopus）

HfO ₂ MIS capacitor with copper gate electrode

Perng, T. H., Chien, C-H., Chen, C. W., Yang, M. J., Lehnen, P., Chang, C. Y. & Huang, T. Y., 1 12月 2004, 於: IEEE Electron Device Letters. 25, 12, p. 784-786 3 p.

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

HfO₂ nanocrystal memory on SiGe channel

Lin, Y. H. & Chien, C-H., 1 1月 2013, 於: Solid-State Electronics. 80, p. 5-9 5 p.

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

High-Accuracy Deep Neural Networks Using a Contralateral-Gated Analog Synapse Composed of Ultrathin MoS nFET and Nonvolatile Charge-Trap Memory

Chung, Y. Y., Cheng, C. C., Chou, Y. C., Chueh, W. C., Chung, W. H., Yu, Z., Hung, T. Y. T., Huang, L. Y., Wang, S. Y., Teng, L. C., Chang, W. H., Li, L. J. & Chien, C-H., 11月 2020, 於: Ieee Electron Device Letters. 41, 11, p. 1649-1652 4 p., 9206053.

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

High-density MIM capacitors with HfO ₂ dielectrics

Perng, T. H., Chien, C-H., Chen, C. W., Lehnen, P. & Chang, C. Y., 22 12月 2004, 於: Thin Solid Films. 469-470, SPEC. ISS., p. 345-349 5 p.

研究成果: Article › 同行評審

39 引文斯高帕斯（Scopus）

High-Interface-Quality Hf-Based Gate Stacks on Si_0.5Ge_0.5Through Aluminum Capping

Lee, M. C., Lee, W. L., Lin, H. R., Luo, G. L. & Chien, C. H., 1 12月 2021, 於: Ieee Electron Device Letters. 42, 12, p. 1723-1726 4 p.

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

Highly scaled equivalent oxide thickness of 0.66nm for TiN/HfO₂/GaSb MOS capacitors by using plasma-enhanced atomic layer deposition

Tsai, M. L., Wang, S. Y. & Chien, C-H., 1 8月 2017, 於: Applied Physics Express. 10, 8, 086501.

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

Highly transparent, high-performance IGZO-TFTs using the selective formation of IGZO source and drain electrodes

Wu, H. C. & Chien, C-H., 1 1月 2014, 於: IEEE Electron Device Letters. 35, 6, p. 645-647 3 p., 6809183.

研究成果: Article › 同行評審

17 引文斯高帕斯（Scopus）

High On/Off ratio and very low leakage in p⁺/n and n ⁺/p germanium/silicon heterojunction diodes

Chen, C. W., Chung, C. T., Lin, J. C., Luo, G. L. & Chien, C-H., 1 2月 2013, 於: Applied Physics Express. 6, 2, 024001.

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

High-performance and low-temperature-compatible p-channel polycrystalline-silicon TFTs using hafnium-silicate gate delectric

Yang, M. J., Chien, C-H., Lu, Y. H., Luo, G. L., Chiu, S. C., Lou, C. C. & Huang, T. Y., 1 10月 2007, 於: IEEE Electron Device Letters. 28, 10, p. 902-904 3 p.

研究成果: Article › 同行評審

17 引文斯高帕斯（Scopus）

High-performance germanium p-and n-MOSFETs with NiGe Source/Drain

Chen, C. W., Tzeng, J. Y., Chung, C. T., Chien, H. P., Chien, C-H. & Luo, G. L., 1 1月 2014, 於: IEEE Transactions on Electron Devices. 61, 8, p. 2656-2661 6 p., 6844018.

研究成果: Article › 同行評審

15 引文斯高帕斯（Scopus）

High performance InGaZnO thin film transistor with InGaZnO source and drain electrodes

Wu, H. C. & Chien, C-H., 11 2月 2013, 於: Applied Physics Letters. 102, 6, 062103.

研究成果: Article › 同行評審

43 引文斯高帕斯（Scopus）

High-performance nonvolatile HfO₂ nanocrystal memory

Lin, Y. H., Chien, C-H., Lin, C. T., Chang, C. Y. & Lei, T. F., 1 3月 2005, 於: IEEE Electron Device Letters. 26, 3, p. 154-156 3 p.

研究成果: Article › 同行評審

74 引文斯高帕斯（Scopus）

High-performance poly-silicon TFTs using HfO₂ gate dielectric

Lin, C. P., Tsui, B-Y., Yang, M. J., Huang, R. H. & Chien, C-H., 1 5月 2006, 於: IEEE Electron Device Letters. 27, 5, p. 360-363 4 p.

研究成果: Article › 同行評審

73 引文斯高帕斯（Scopus）

High-performance poly-Si TFTs of top-gate with high-κ metal-gate combine the laser annealed channel and glass substrate

Lu, Y. H., Chien, C-H., Kuo, P. Y., Yang, M. J., Lin, H. Y. & Chao, T-S., 24 1月 2011, 於: Electrochemical and Solid-State Letters. 14, 1

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

High-Performance Schottky Contact Quantum-Well Germanium Channel pMOSFET with Low Thermal Budget Process

Hsu, C. C., Tsai, Y. H., Chen, C. W., Li, J. H., Lin, Y. H., Lee, Y. J., Luo, G. L. & Chien, C-H., 1 1月 2016, 於: IEEE Electron Device Letters. 37, 1, p. 8-11 4 p., 7331593.

研究成果: Article › 同行評審

10 引文斯高帕斯（Scopus）

High quality Al₂O₃ IPD with NH₃ surface nitridation

Chen, Y. Y., Chien, C-H. & Lou, J. C., 1 8月 2003, 於: IEEE Electron Device Letters. 24, 8, p. 503-505 3 p.

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

High-speed GaAs metal gate semiconductor field effect transistor structure grown on a composite Ge/Ge_xSi_1-x/Si substrate

Luo, G. L., Hsieh, Y. C., Chang, E. Y., Pilkuhn, M. H., Chien, C-H., Yang, T. H., Cheng, C. C. & Chang, C. Y., 9 5月 2007, 於: Journal of Applied Physics. 101, 8, 084501.

研究成果: Article › 同行評審

24 引文斯高帕斯（Scopus）

Hot-electron-induced electron trapping in 0.13 μm nMOSFETs with ultrathin (EOT=1.6 nm) nitrided gate oxide

Chen, C. W., Chien, C-H., Perng, T. H. & Chang, C. Y., 14 9月 2005, 於: Electrochemical and Solid-State Letters. 8, 8

研究成果: Article › 同行評審

Hydrothermal crystallization and modification of surface hydroxyl groups of anodized TiO ₂ nanotube-arrays for more efficient photoenergy conversion

Kuo, Y. Y., Li, T. H., Yao, J. N., Lin, C-Y. & Chien, C-H., 1 9月 2012, 於: Electrochimica Acta. 78, p. 236-243 8 p.

研究成果: Article › 同行評審

30 引文斯高帕斯（Scopus）

Impact of channel dangling bonds on reliability characteristics of Flash memory on poly-Si thin films

Lin, Y. H., Chien, C-H., Chou, T. H., Chao, T-S. & Lei, T. F., 1 4月 2007, 於: IEEE Electron Device Letters. 28, 4, p. 267-269 3 p.

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

Impact of High-Temperature Annealing on Interfacial Layers Grown by O₂ Plasma on Si0.₅Ge_0.5 Substrates

Lee, M. C., Lin, H. R., Lee, W. L., Chung, N. J., Luo, G. L. & Chien, C. H., 1 3月 2022, 於: IEEE Transactions on Electron Devices. 69, 3, p. 1265-1270 6 p.

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

Impact of the Crystal Phase of ZrO₂ on Charge Trapping Memtransistor as Synaptic Device for Neural Network Application

Chou, Y. C., Tsai, C. W., Yi, C. Y., Chung, W. H. & Chien, C-H., 2020, 於: IEEE Journal of the Electron Devices Society. 8, p. 572-576 5 p., 9091548.

研究成果: Article › 同行評審

開啟存取

1 引文斯高帕斯（Scopus）

Improved electrical properties of Gd2 O3 GaAs capacitor with modified wet-chemical clean and sulfidization procedures

Cheng, C. C., Chien, C-H., Luo, G. L., Tseng, C. K., Chiang, H. C., Yang, C. H. & Chang, C. Y., 29 1月 2008, 於: Journal of the Electrochemical Society. 155, 3

研究成果: Article › 同行評審

15 引文斯高帕斯（Scopus）

Improved field emission properties of thiolated multi-wall carbon nanotubes on a flexible carbon cloth substrate

Chuang, F. T., Chen, P. Y., Cheng, T. C., Chien, C-H. & Li, B. J., 26 9月 2007, 於: Nanotechnology. 18, 39, 395702.

研究成果: Article › 同行評審

49 引文斯高帕斯（Scopus）

Improved immunity to plasma damage in ultrathin nitrided oxides

Chen, C. C., Lin, H-C., Chang, C. Y., Liang, M. S., Chien, C-H., Hsien, S. K. & Huang, T. Y., 1 1月 2000, 於: IEEE Electron Device Letters. 21, 1, p. 15-17 3 p.

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

Improved low temperature characteristics of p-channel MOSFETs with Si _1-xGe _x raised source and drain

Huang, H. J., Chen, K. M., Huang, T. Y., Chao, T-S., Huang, G. W., Chien, C-H. & Chang, C. Y., 1 8月 2001, 於: IEEE Transactions on Electron Devices. 48, 8, p. 1627-1632 6 p., 936576.

研究成果: Article › 同行評審

7 引文斯高帕斯（Scopus）

Improved ultrathin gate oxide integrity in p⁺-polysilicon-gate p-channel metal oxide semiconductor with medium-dose fluorine implantation

Chen, C. C., Lin, H-C., Chang, C. Y., Huang, T. Y., Chien, C-H. & Liang, M. S., 1 6月 2000, 於: Electrochemical and Solid-State Letters. 3, 6, p. 290-292 3 p.

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

Improvements of ozone surface treatment on the electrical characteristics and reliability in HfO₂ gate stacks

Chen, S. C., Chen, Y. Y., Chang, Y. T., Lou, J. C., Kin, K. T. & Chien, C-H., 1 9月 2007, 於: Microelectronic Engineering. 84, 9-10, p. 1898-1901 4 p.

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

Improvements on electrical characteristics of p-channel metal-oxide-semiconductor field effect transistors with HfO₂ gate stacks by post deposition N₂O plasma treatment

Lu, W. T., Chien, C-H., Lan, W. T., Lee, T. C., Yang, M. J., Shen, S. W., Lehnen, P. & Huang, T. Y., 9 11月 2005, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44, 11, p. 7869-7875 7 p.

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

Improving electrical properties of bottom-gate poly(3-hexylthiophene) thin-film transistor using CF₄ plasma treatment

Wu, H. C. & Chien, C-H., 11 3月 2013, 於: IEEE Electron Device Letters. 34, 4, p. 538-540 3 p., 6471742.

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

Improving Interface State Density and Thermal Stability of High-κ Gate Stack Through High-Vacuum Annealing on Si_0.5Ge_0.5

Lee, W. L., Yu, C. Y., Zhang, J. L., Luo, G. L. & Chien, C-H., 1 5月 2019, 於: IEEE Electron Device Letters. 40, 5, p. 678-681 4 p., 8667385.

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

Improving the Performance of Charge Trapping MemTransistor as Synaptic Device by Ti-doped HfO2

Chou, Y. C., Chung, W. H., Tsai, C. W., Yi, C. Y. & Chien, C-H., 16 12月 2020, 於: IEEE Journal of the Electron Devices Society. 9, p. 137-143 7 p., 9296335.

研究成果: Article › 同行評審

開啟存取

Improving Thermal Stability and Interface State Density of High-κ Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium

Tsai, Y. H., Chou, C. H., Shih, A. S., Jau, Y. H., Yeh, W. K., Lin, Y. H., Ko, F-H. & Chien, C-H., 1 11月 2016, 於: IEEE Electron Device Letters. 37, 11, p. 1379-1382 4 p., 7577750.

研究成果: Article › 同行評審

7 引文斯高帕斯（Scopus）

Improving thermal stability for ge p-mosfet of HfO₂-based gate stack with ti-doped into interfacial layer by in-situ plasma-enhanced atomic layer deposition

Li, H. H., Tsai, Y. H., Lin, Y. H. & Chien, C-H., 8月 2021, 於: Ieee Electron Device Letters. 42, 8, p. 1109-1111 3 p., 9448269.

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

Incorporating yttrium into a GeO interfacial layer with HfO₂-based gate stack on Ge

Chou, C-H., Lu, Y. H., Tsai, Y. H., Shih, A. S., Yeh, W. K. & Chien, C. H., 19 1月 2018, 於: ECS Journal of Solid State Science and Technology. 7, 2, p. N15-N19 5 p.

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

Influence of Ta content on the physical properties of SrBi ₂ Ta ₂ O ₉ ferroelectric thin films

Hsu, F. Y., Leu, C. C., Chien, C-H. & Hu, C. T., 1 12月 2006, 於: Journal of Materials Research. 21, 12, p. 3124-3133 10 p.

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

Influence of Ti doping on the band gap and thermal stability of ultrathin GeO_xfilms

Yang, Y. C., Tsai, Y. H., Amrit, P., Chen, T. Y., Liu, H. T., Tang, S. J., Lin, C-L. & Chien, C-H., 8月 2021, 於: Journal of Physics D: Applied Physics. 54, 34, p. 1-7 7 p., 345102.

研究成果: Article › 同行評審

Influence of ultrathin tantalum buffer layers on microstructure and ferroelectric properties of SrBi ₂ Ta ₂ O ₉ thin films

Leu, C. C., Chien, C-H., Hsu, F. Y., Lin, H. T. & Hu, C. T., 13 9月 2004, 於: Journal of the Electrochemical Society. 151, 8

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

簡 昭欣

研究成果

搜尋結果

簡昭欣