簡 昭欣

研究成果

每年研究成果 1993 2004 2005 2006 2007 2008 2012 2015 2020 2022

• 155 Article
• 37 Conference contribution
• 9 Paper
• 6 Conference article
• 3 更多
  • 1 Comment/debate
  • 1 Letter
  • 1 Review article

每年研究成果

每年研究成果

搜尋結果

• Paper

  4D pulse propagation and 4D solitons in graded-index materials

  Yu, S. S., Lai, Y-C. & Chien, C-H., 1 12月 1994.

  研究成果: Paper › 同行評審

  • Solitons 100%
  • Wave propagation 37%
  • Wavelength 31%

• Combination effects of nitrogen implantation at S/D extension and N ₂ O oxide on 0.18 μm n- and p-MOSFETs

  Chao, T-S., Chien, C-H., Chiao, S. K., Lin, H-C., Liaw, M. C., Chen, L. P., Huang, T. Y., Lei, T. F. & Chang, C. Y., 1 1月 1997, p. 316-320. 5 p.

  研究成果: Paper › 同行評審

  • Nitrogen 100%
  • Oxides 92%
  • field effect transistors 84%
  • nitrogen 79%
  • oxides 67%
  1 引文 斯高帕斯（Scopus）

• Effects of low tempersture NH3 treatment on HfO2/SiO2 stack gate dielectrics fabricated by MOCVD system

  Lu, W. T., Chien, C-H., Lin, Y. C., Yang, M. J. & Huang, T. Y., 1 12月 2004, p. 434-442. 9 p.

  研究成果: Paper › 同行評審

  • Metallorganic chemical vapor deposition 100%
  • Gate dielectrics 90%
  • Electric breakdown 35%
  • Annealing 31%
  • Oxides 27%

• Improved plasma charging immunity in ultra-thin gate oxide with fluorine and nitrogen implantation

  Chen, C. C., Lin, H-C., Chang, C. Y., Huang, C. C., Chien, C-H., Huang, T. H. & Liang, M. S., 1 12月 2000, p. 121-124. 4 p.

  研究成果: Paper › 同行評審

  • Fluorine 100%
  • Nitrogen 67%
  • Plasmas 66%
  • Oxides 62%
  • Substrates 17%
  1 引文 斯高帕斯（Scopus）

• Mechanism for slow programming in advanced low-voltage, high-speed ferroelectric memory

  Lai, S. C., Tsai, C. W., Yen, C. T., Liu, C. L., Lee, S. Y., Lien, H. M., Lung, S. L., Chien, C-H., Wu, T. B., Wang, T-H., Liu, R. & Lu, C. Y., 7月 2004, p. 123-126. 4 p.

  研究成果: Paper › 同行評審

  • Ferroelectric materials 100%
  • Polarization 69%
  • Data storage equipment 46%
  • Electric potential 39%
  • Lead zirconate titanate 18%

• Metal nanowires self-assembly by dielectrophoretic and applications in optoelectronics

  Lin, C. C., Lin, Y. L., Sun, W. H., Hu, S. Y., Cheng, C., Chien, C-H., Chen, Z. L., Chang, C. J., Liu, J. C., Chen, C. L. & Ko, F-H., 7月 2015.

  研究成果: Paper › 同行評審

  • Self assembly 100%
  • Nanowires 94%
  • Optoelectronic devices 88%
  • Conversion efficiency 80%
  • Optoelectronics 68%

• Model for photoresist-induced charging damage in ultra-thin gate oxides

  Lin, H-C., Chien, C-H., Wang, M. F., Huang, T. Y. & Chang, C. Y., 1 1月 1997, p. 247-250. 4 p.

  研究成果: Paper › 同行評審

  • Photoresists 100%
  • Oxides 67%
  • Plasmas 36%
  • Plasma applications 31%
  • Substrates 27%
  3 引文 斯高帕斯（Scopus）

• Plasma charging induced gate oxide damage during metal etching and ashing

  Lin, H-C., Perng, C. H., Chien, C-H., Chiou, S. G., Chang, T. F., Huang, T. Y. & Chang, C. Y., 1 1月 1996, p. 113-116. 4 p.

  研究成果: Paper › 同行評審

  • Helicons 100%
  • Etching 57%
  • Plasmas 49%
  • Oxides 46%
  • Metals 34%
  1 引文 斯高帕斯（Scopus）

• Plasma-induced charging damage in ultrathin (3 nm) nitrided oxides

  Chen, C. C., Lin, H-C., Chang, C. Y., Liang, M. S., Chien, C-H., Hsien, S. K. & Huang, T. Y., 1 12月 1999, p. 141-144. 4 p.

  研究成果: Paper › 同行評審

  • Plasmas 100%
  • Oxides 93%
  • Leakage currents 50%
  • Photoresists 19%
  • Electric current measurement 18%
  3 引文 斯高帕斯（Scopus）
• Review article

  Evaluation of plasma charging damage in ultrathin gate oxides

  Lin, H-C., Chen, C. C., Chien, C-H., Hsein, S. K., Wang, M. F., Chao, T-S., Huang, T. Y. & Chang, C. Y., 1 3月 1998, 於: IEEE Electron Device Letters. 19, 3, p. 68-70 3 p.

  研究成果: Review article › 同行評審

  • Plasmas 100%
  • Oxides 93%
  • Transconductance 83%
  • Plasma 67%
  • Oxide 58%
  28 引文 斯高帕斯（Scopus）