簡 昭欣

研究成果

每年研究成果 1993 2004 2005 2006 2007 2008 2012 2015 2020 2022 2022

• 155 Article
• 42 Conference contribution
• 9 Paper
• 6 Conference article
• 3 更多
  • 1 Comment/debate
  • 1 Letter
  • 1 Review article

每年研究成果

每年研究成果

搜尋結果

• Article

  A CMOS-compatible poly-si nanowire device with hybrid sensor/memory characteristics for system-on-chip applications

  Chen, M. C., Chen, H. Y., Lin, C. Y., Chien, C-H., Hsieh, T. F., Horng, J. T., Qiu, J. T., Huang, C. C., Ho, C. H. & Yang, F. L., 1 4月 2012, 於: Sensors. 12, 4, p. 3952-3963 12 p.

  研究成果: Article › 同行評審

  開啟存取

  • Nanowires 100%
  • Hybrid sensors 95%
  • Semiconductors 87%
  • Oxides 73%
  • Oxide semiconductors 72%
  22 引文 斯高帕斯（Scopus）

• Aggressive Equivalent Oxide Thickness of 0.7 nm on Si_0.8Ge_0.2Through HfO₂ Dielectric Direct Deposition

  Lee, M. C., Zhao, Y. Y., Chen, W. L., Wang, S. Y., Chen, Y. X., Luo, G. L. & Chien, C. H., 1 10月 2022, 於: Ieee Electron Device Letters. 43, 10, p. 1605-1608 4 p.

  研究成果: Article › 同行評審

  • Dielectric Material 100%
  • Oxides 97%
  • X ray photoelectron spectroscopy 69%
  • Oxide 61%
  • Electron microscopes 53%

• An interfacial investigation of high-dielectric constant material hafnium oxide on Si substrate

  Chen, S. C., Lou, J. C., Chien, C-H., Liu, P-T. & Chang, T. C., 22 9月 2005, 於: Thin Solid Films. 488, 1-2, p. 167-172 6 p.

  研究成果: Article › 同行評審

  • Hafnium oxides 100%
  • hafnium oxides 77%
  • Leakage Current 74%
  • Hafnium Atom 67%
  • Leakage currents 60%
  23 引文 斯高帕斯（Scopus）

• An Investigation of Strain Silicon Technology on Highly Strained, Highly Scaled NFET Devices

  Lu, C. C., Lei, T. F., Hou, T-H., Chien, C-H., Liao, M. H., Lee, T. L. & Jang, S. M., 1 8月 2009, 於: International Journal of Electrical Engineering. 16, 4, p. 289-294 6 p.

  研究成果: Article › 同行評審

  • Silicon 100%
  • Strained silicon 60%
  • Ballistics 39%
  • Carrier transport 28%
  • Nitrides 21%

• An investigation of transient effects in poly(3-hexylthiophenes) based thin film transistors caused by oxygen and water molecules

  Chang, C. H., Chen, M. F. & Chien, C-H., 3 8月 2011, 於: Journal of the Electrochemical Society. 158, 9

  研究成果: Article › 同行評審

  • Thin film transistors 100%
  • Doping (additives) 87%
  • Molecules 76%
  • Doping Material 68%
  • Oxygen 63%
  4 引文 斯高帕斯（Scopus）

• Annealing temperature effect on the performance of nonvolatile HfO ₂ Si-oxide-nitride-oxide-silicon-type flash memory

  Lin, Y. H., Chien, C-H., Chang, C. Y. & Lei, T. F., 22 5月 2006, 於: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 24, 3, p. 682-685 4 p.

  研究成果: Article › 同行評審

  • Silicon oxides 100%
  • Nitrides 83%
  • Flash memory 82%
  • silicon oxides 72%
  • Thermal effects 70%
  15 引文 斯高帕斯（Scopus）

• Anomalous negative bias temperature instability behavior in p -channel metal-oxide-semiconductor field-effect transistors with HfSiON/SiO₂ gate stack

  Chen, S. C., Chien, C-H. & Lou, J. C., 27 6月 2007, 於: Applied Physics Letters. 90, 23, 233505.

  研究成果: Article › 同行評審

  • metal oxide semiconductors 100%
  • field effect transistors 76%
  • linear prediction 74%
  • electric potential 52%
  • extrapolation 45%

• A novel nanoinjection lithography (NInL) technology and its application for 16-nm node device fabrication

  Chen, H. Y., Chen, C. C., Hsueh, F. K., Liu, J. T., Shy, S. L., Wu, C. S., Chien, C-H., Hu, C-M., Huang, C. C. & Yang, F. L., 1 11月 2011, 於: IEEE Transactions on Electron Devices. 58, 11, p. 3678-3686 9 p., 6012518.

  研究成果: Article › 同行評審

  • Lithography 100%
  • Masks 86%
  • Fabrication 67%
  • Dielectric Material 64%
  • Metals 47%
  5 引文 斯高帕斯（Scopus）

• Applying dielectrophoresis on silver nanowires alignment and assembly to enhance the efficiency of plasmonic silicon solar cells

  Lin, C. C., Wang, S. Y., Lin, W. L., Lin, Y. L., Cheng, C., Sun, W. H., Chen, Z. L., Chien, C-H. & Ko, F-H., 7月 2015, 於: International Journal of Electrochemical Science. 10, 9, p. 7192-7199 8 p.

  研究成果: Article › 同行評審

  • Silver nanowires 100%
  • Plasmonics 90%
  • Silicon solar cells 83%
  • Dielectrophoresis 82%
  • Electrophoresis 80%
  2 引文 斯高帕斯（Scopus）

• A study of bulk current mechanism in P3HT-based thin film transistors and approach for current suppression

  Chang, C. H. & Chien, C-H., 1 1月 2012, 於: Organic Electronics. 13, 11, p. 2620-2626 7 p.

  研究成果: Article › 同行評審

  • Thin film transistors 100%
  • transistors 62%
  • retarding 59%
  • Carbon nanotubes 55%
  • Multi Walled Nanotube 43%
  4 引文 斯高帕斯（Scopus）

• Body-tied germanium FinFETs directly on a silicon substrate

  Chen, C. W., Chung, C. T., Luo, G. L. & Chien, C-H., 29 11月 2012, 於: IEEE Electron Device Letters. 33, 12, p. 1678-1680 3 p., 6353504.

  研究成果: Article › 同行評審

  • Misfit Dislocation 100%
  • Germanium 72%
  • FinFET 69%
  • Transistors 46%
  • Hole mobility 44%
  14 引文 斯高帕斯（Scopus）

• Body-tied germanium tri-gate junctionless PMOSFET with in-situ boron doped channel

  Chen, C. W., Chung, C. T., Tzeng, J. Y., Chang, P. S., Luo, G. L. & Chien, C-H., 1 1月 2014, 於: IEEE Electron Device Letters. 35, 1, p. 12-14 3 p., 6684319.

  研究成果: Article › 同行評審

  • Germanium 100%
  • Trimming 91%
  • Boron 84%
  • Boron Atom 64%
  • Transistors 63%
  14 引文 斯高帕斯（Scopus）

• Cerium oxide nanocrystals for nonvolatile memory applications

  Yang, S. M., Chien, C-H., Huang, J. J., Lei, T. F., Tsai, M. J. & Lee, L. S., 1 12月 2007, 於: Applied Physics Letters. 91, 26, 262104.

  研究成果: Article › 同行評審

  • cerium oxides 100%
  • silicon oxides 75%
  • nanocrystals 64%
  • annealing 43%
  • nitrides 33%
  29 引文 斯高帕斯（Scopus）

• Characteristics of atomic-layer-deposited Al₂O₃ high- k dielectric films grown on Ge substrates

  Cheng, C. C., Chien, C-H., Luo, G. L., Liu, J. C., Kei, C. C., Liu, D. R., Hsiao, C. N., Yang, C. H. & Chang, C. Y., 22 9月 2008, 於: Journal of the Electrochemical Society. 155, 10

  研究成果: Article › 同行評審

  • High-k dielectric 100%
  • Dielectric films 93%
  • Dielectric Film 92%
  • Aluminum oxide 60%
  • Dielectric Material 56%
  38 引文 斯高帕斯（Scopus）

• Characteristics of the inter-poly Al₂O₃ dielectrics on NH₃-nitrided bottom poly-Si for next-generation flash memories

  Chen, Y. Y., Chien, C-H. & Lou, J. C., 4月 2005, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44, 4 A, p. 1704-1710 7 p.

  研究成果: Article › 同行評審

  • Nitridation 100%
  • Flash memory 92%
  • Polysilicon 89%
  • Annealing 76%
  • Aluminum oxide 74%
  14 引文 斯高帕斯（Scopus）

• Characterization of antenna effect by nondestructive gate current measurement

  Lin, H-C., Chien, C-H. & Huang, T. Y., 15 8月 1996, 於: Japanese Journal of Applied Physics, Part 2: Letters. 35, 8 SUPPL. B

  研究成果: Article › 同行評審

  • Electric current measurement 100%
  • Plasmas 77%
  • antennas 73%
  • damage 60%
  • Antennas 54%
  5 引文 斯高帕斯（Scopus）

• Characterization of plasma charging induced gate oxide damage during metal etching

  Lin, H-C., Wang, M. F., Chien, C-H., Huang, T. Y. & Chang, C. Y., 1 5月 1998, 於: Proceedings of the National Science Council, Republic of China, Part A: Physical Science and Engineering. 22, 3, p. 416-424 9 p.

  研究成果: Article › 同行評審

  • Helicons 100%
  • Etching 86%
  • Plasmas 74%
  • Oxides 69%
  • Electric breakdown 60%

• Charge retention loss in a HfO₂ dot flash memory via thermally assisted tunneling

  Wang, T-H., Ma, H. C., Li, C. H., Lin, M., Chien, C-H. & Lei, T. F., 1 1月 2008, 於: IEEE Electron Device Letters. 29, 1, p. 109-110 2 p.

  研究成果: Article › 同行評審

  • Flash memory 100%
  • Tunneling 85%
  • Leakage Current 55%
  • Hafnium Atom 50%
  • Oxide semiconductors 49%
  4 引文 斯高帕斯（Scopus）

• Combined effects of nitrogen implantation at S/D extension and N ₂O oxide on 0.18 μm N- and P-metal oxide field effect transistors (MOSFETs)

  Chao, T-S., Chang, S. J., Chien, C-H., Lin, H-C., Huang, T. Y. & Chang, C. Y., 1 12月 1999, 於: Japanese Journal of Applied Physics, Part 2: Letters. 38, 12 A

  研究成果: Article › 同行評審

  • Field effect transistors 100%
  • metal oxides 90%
  • Nitrogen 86%
  • Oxides 80%
  • field effect transistors 73%

• Comparison of the Physical and Electrical Properties of HfO2/Al2O3/HfO2/GeO x /Ge and HfO2/Al2O3/GeO x /Ge Gate Stacks

  Tsai, Y. H., Chou, C. H., Li, H. H., Yeh, W-K., Lin, Y. H., Ko, F-H. & Chien, C-H., 8月 2019, 於: Journal of Nanoscience and Nanotechnology. 19, 8, p. 4529-4534 6 p.

  研究成果: Article › 同行評審

  • Electric properties 100%
  • Capacitor 96%
  • Aluminum oxide 90%
  • Physical properties 84%
  • Electrical Property 78%

• Contrast mechanism of ferroelectric domains in scanning capacitance microscopy

  Leu, C. C., Chien, C-H., Chen, C. Y., Chang, M. N., Hsu, F. Y. & Hu, C. T., 22 11月 2004, 於: Electrochemical and Solid-State Letters. 7, 10

  研究成果: Article › 同行評審

  • Scanning Capacitance Microscopy 100%
  • Ferroelectric Domain 93%
  • Ferroelectric materials 71%
  • Microscopic examination 58%
  • Black 48%
  4 引文 斯高帕斯（Scopus）

• Deep sub-micron strained Si_0.85Ge_0.15 channel p-channel Metal-Oxide-Semiconductor Field-Effect Transistors (pMOSFETs) with ultra-thin N₂O-annealed SiN gate dielectric

  Chen, C. W., Chien, C-H., Chen, Y. C., Hsu, S. L. & Chang, C. Y., 13 6月 2005, 於: Japanese Journal of Applied Physics, Part 2: Letters. 44, 8-11

  研究成果: Article › 同行評審

  • Gate dielectrics 100%
  • MOSFET devices 82%
  • metal oxide semiconductors 72%
  • field effect transistors 55%
  • Hole mobility 38%
  1 引文 斯高帕斯（Scopus）

• Demonstration of 40-nm Channel Length Top-Gate p-MOSFET of WS₂ Channel Directly Grown on SiO_x/Si Substrates Using Area-Selective CVD Technology

  Chung, Y. Y., Shieh, J. M., Su, S. K., Chiang, H. L., Chen, T. C., Li, L. J., Wong, H. S. P., Jian, W-B., Chien, C-H., Lu, K. C., Cheng, C. C., Li, M. Y., Lin, C. T., Li, C. F., Chen, J. H., Lai, T. Y. & Li, K. S., 12月 2019, 於: IEEE Transactions on Electron Devices. 66, 12, p. 5381-5386 6 p., 8889483.

  研究成果: Article › 同行評審

  • Chemical vapor deposition 100%
  • D region 94%
  • Exfoliation 89%
  • Tungsten 78%
  • Demonstrations 70%
  4 引文 斯高帕斯（Scopus）

• Demonstration of HfO ₂ -Based Gate Dielectric with Low Interface State Density and Sub-nm EOT on Ge by Incorporating Ti into Interfacial Layer

  Tsai, Y. H., Chou, C. H., Chung, Y. Y., Yeh, W. K., Lin, Y. H., Ko, F-H. & Chien, C-H., 1 2月 2019, 於: IEEE Electron Device Letters. 40, 2, p. 174-176 3 p., 8579236.

  研究成果: Article › 同行評審

  • Interface State 100%
  • Interface states 99%
  • Gate dielectrics 92%
  • Titanium 62%
  • Dielectric Material 57%
  3 引文 斯高帕斯（Scopus）

• Dielectric properties of nitric oxide-annealed gate oxides grown on nitrogen-implanted silicon substrates

  Chen, Y. Y., Chien, C-H. & Lou, J. C., 14 8月 2006, 於: Thin Solid Films. 513, 1-2, p. 264-268 5 p.

  研究成果: Article › 同行評審

  • Nitric oxide 100%
  • nitric oxide 88%
  • Dielectric properties 88%
  • Dielectric Property 73%
  • Nitrogen 67%
  2 引文 斯高帕斯（Scopus）

• Domain structure study of SrBi ₂ Ta ₂ O ₉ ferroelectric thin films by scanning capacitance microscopy

  Leu, C. C., Chen, C. Y., Chien, C-H., Chang, M. N., Hsu, F. Y. & Hu, C. T., 19 5月 2003, 於: Applied Physics Letters. 82, 20, p. 3493-3495 3 p.

  研究成果: Article › 同行評審

  • capacitance 100%
  • microscopy 87%
  • scanning 78%
  • thin films 64%
  • image contrast 47%
  72 引文 斯高帕斯（Scopus）

• Effect of Mg doping on the electrical characteristics of high performance IGZO Thin Film Transistors

  Wu, H. C., Liu, T. S. & Chien, C-H., 17 2月 2014, 於: ECS Journal of Solid State Science and Technology. 3, 2

  研究成果: Article › 同行評審

  • Thin film transistors 100%
  • Doping (additives) 87%
  • Gallium 55%
  • Zinc oxide 51%
  • Indium 50%
  14 引文 斯高帕斯（Scopus）

• Effect of passivation layer on InGaZnO thin-film transistors with hybrid silver nanowires as source and drain electrodes

  Yu, C. H., Wu, H. C. & Chien, C-H., 1 8月 2015, 於: Japanese journal of applied physics. 54, 8, 081101.

  研究成果: Article › 同行評審

  • Silver nanowires 100%
  • Thin film transistors 78%
  • Passivation 74%
  • passivity 57%
  • silver 50%
  5 引文 斯高帕斯（Scopus）

• Effects of HfO₂ buffer layer thickness on the properties of Pt/SrBi₂Ta₂ O₉/HfO₂/Si structure

  Leu, C. C., Lin, C. H., Chien, C-H. & Yang, M. J., 1 7月 2008, 於: Journal of Materials Research. 23, 7, p. 2023-2032 10 p.

  研究成果: Article › 同行評審

  • Buffer layers 100%
  • Nonconductor 78%
  • MIS (semiconductors) 78%
  • Semiconductor materials 62%
  • buffers 59%
  6 引文 斯高帕斯（Scopus）

• Effects of interfacial sulfidization and thermal annealing on the electrical properties of an atomic-layer-deposited Al2 O3 gate dielectric on GaAs substrate

  Cheng, C. C., Chien, C-H., Luo, G. L., Yang, C. H., Chang, C. C., Chang, C. Y., Kei, C. C., Hsiao, C. N. & Perng, T. P., 21 4月 2008, 於: Journal of Applied Physics. 103, 7, 074102.

  研究成果: Article › 同行評審

  • electrical properties 100%
  • arsenic 97%
  • annealing 81%
  • leakage 75%
  • oxides 56%
  15 引文 斯高帕斯（Scopus）

• Effects of low-temperature NH₃ treatment on the characteristics of HfO₂/SiO₂ gate stack

  Lu, W. T., Chien, C-H., Huang, I. J., Yang, M. J., Lehnen, P. & Huang, T. Y., 2 12月 2005, 於: Journal of the Electrochemical Society. 152, 11

  研究成果: Article › 同行評審

  • Annealing 100%
  • Breakdown Voltage 63%
  • Temperature 50%
  • Electric breakdown 47%
  • Dielectric Material 37%

• Effects of minority-carrier response behavior on Ge MOS capacitor characteristics: Experimental measurements and theoretical simulations

  Cheng, C. C., Chien, C-H., Luo, G. L., Ling, Y. T., Chang, R. D., Kei, C. K., Hsiao, C. N., Liu, J. C. & Chang, C. Y., 23 3月 2009, 於: IEEE Transactions on Electron Devices. 56, 5, p. 1118-1127 10 p.

  研究成果: Article › 同行評審

  • MOS capacitors 100%
  • Carrier concentration 90%
  • MOS devices 88%
  • Capacitor 65%
  • Conductance 61%
  7 引文 斯高帕斯（Scopus）

• Effects of polysilicon gate doping concentration on plasma charging damage in ultrathin gate oxides

  Chen, C. C., Lin, H-C., Chang, C. Y., Huang, T. Y., Chien, C-H. & Liang, M. S., 1 2月 2000, 於: Electrochemical and Solid-State Letters. 3, 2, p. 103-105 3 p.

  研究成果: Article › 同行評審

  • Polysilicon 100%
  • Doping (additives) 96%
  • charging 80%
  • Plasmas 79%
  • Oxides 74%
  1 引文 斯高帕斯（Scopus）

• Effects of postdeposition annealing on the characteristics of Hf Ox Ny dielectrics on germanium and silicon substrates

  Cheng, C. C., Chien, C-H., Chen, C. W., Hsu, S. L., Yang, C. H. & Chang, C. Y., 1 7月 2006, 於: Journal of the Electrochemical Society. 153, 7

  研究成果: Article › 同行評審

  • Germanium 100%
  • Electric properties 79%
  • Annealing 74%
  • Dielectric Material 65%
  • Capacitance 63%
  16 引文 斯高帕斯（Scopus）

• Effects of tantalum adhesion layer on the properties of SrBi₂Ta₂O₉ ferroelectric thin films

  Leu, C. C., Yang, M. C., Hu, C. T., Chien, C-H., Yang, M. J. & Huang, T. Y., 3 12月 2001, 於: Applied Physics Letters. 79, 23, p. 3833-3835 3 p.

  研究成果: Article › 同行評審

  • tantalum 100%
  • adhesion 77%
  • thin films 47%
  • titanium 38%
  • mass spectrometers 31%
  14 引文 斯高帕斯（Scopus）

• Effects of titanium and tantalum adhesion layers on the properties of sol-gel derived SrBi ₂Ta ₂O ₉ thin films

  Leu, C. C., Lin, H. T., Hu, C. T., Chien, C-H., Yang, M. J., Yang, M. C. & Huang, T. Y., 1 8月 2002, 於: Journal of Applied Physics. 92, 3, p. 1511-1517 7 p.

  研究成果: Article › 同行評審

  • tantalum 100%
  • adhesion 77%
  • titanium 76%
  • gels 71%
  • thin films 47%
  10 引文 斯高帕斯（Scopus）

• Effects of ultrathin tantalum seeding layers on sol-gel-derived SrBi ₂Ta₂O₉ thin films

  Leu, C. C., Chien, C-H., Yang, M. J., Yang, M. C., Huang, T. Y., Lin, H. T. & Hu, C. T., 17 6月 2002, 於: Applied Physics Letters. 80, 24, p. 4600-4602 3 p.

  研究成果: Article › 同行評審

  • inoculation 100%
  • strontium 98%
  • tantalum 97%
  • bismuth 88%
  • gels 70%
  6 引文 斯高帕斯（Scopus）

• Efficient sub-nanosecond intracavity optical parametric oscillator pumped with a passively Q-switched Nd:GdVO ₄ laser

  Chen, Y-F., Chen, S. W., Tsai, L. Y., Chen, Y. C. & Chien, C-H., 1 11月 2004, 於: Applied Physics B: Lasers and Optics. 79, 7, p. 823-825 3 p.

  研究成果: Article › 同行評審

  • parametric amplifiers 100%
  • diodes 48%
  • pumps 45%
  • lasers 41%
  • YAG lasers 28%
  33 引文 斯高帕斯（Scopus）

• Electrical Characteristics of Si_0.8Ge_0.2p-MOSFET With TMA Pre-Doping and NH₃Plasma IL Treatment

  Lee, M. C., Chung, N. J., Lin, H. R., Lee, W. L., Chung, Y. Y., Wang, S. Y., Luo, G. L. & Chien, C. H., 1 4月 2022, 於: IEEE Transactions on Electron Devices. 69, 4, p. 1776-1780 5 p.

  研究成果: Article › 同行評審

  • Doping (additives) 100%
  • Plasmas 82%
  • Substrates 63%
  • Plasma 55%
  • X ray photoelectron spectroscopy 54%
  1 引文 斯高帕斯（Scopus）

• Electrical characteristics of thin cerium oxide film on silicon substrate by reactive DC sputtering

  Pan, T. M., Chien, C-H., Lei, T. F., Chao, T-S. & Huang, T. Y., 1 9月 2001, 於: Electrochemical and Solid-State Letters. 4, 9

  研究成果: Article › 同行評審

  • cerium oxides 100%
  • Sputtering 92%
  • Cerium oxide 91%
  • Oxide films 89%
  • Leakage Current 70%
  10 引文 斯高帕斯（Scopus）

• Electrical characteristics of thin HfO ₂ gate dielectrics prepared using different pre-deposition surface treatments

  Chen, C. W., Chien, C-H., Perng, T. H., Yang, M. J., Liang, J. S., Lehnen, P., Tsui, B-Y. & Chang, C. Y., 1月 2005, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44, 1 A, p. 87-93 7 p.

  研究成果: Article › 同行評審

  • Gate dielectrics 100%
  • surface treatment 74%
  • Surface treatment 73%
  • Hysteresis 66%
  • hysteresis 54%
  4 引文 斯高帕斯（Scopus）

• Electrical properties of low-temperature-compatible P-channel polycrystalline-silicon TFTs using high-κ gate dielectrics

  Yang, M. J., Chien, C-H., Lu, Y. H., Shen, C. Y. & Huang, T. Y., 1 4月 2008, 於: IEEE Transactions on Electron Devices. 55, 4, p. 1027-1034 8 p.

  研究成果: Article › 同行評審

  • Gate dielectrics 100%
  • Polysilicon 81%
  • Electric properties 74%
  • Dielectric Material 61%
  • Electrical Property 59%
  11 引文 斯高帕斯（Scopus）

• Electrical properties of metal-ferroelectric-insulator-semiconductor using sol-gel derived SrBi₂Ta₂O₉ film and ultra-thin Si₃N₄ buffer layer

  Huang, C. H., Tseng, T-Y., Chien, C-H., Yang, M. J., Leu, C. C., Chang, T. C., Liu, P-T. & Huang, T. Y., 2 12月 2002, 於: Thin Solid Films. 420-421, p. 377-381 5 p.

  研究成果: Article › 同行評審

  • Buffer layers 100%
  • Ferroelectric materials 92%
  • Sol-gels 92%
  • Electric properties 74%
  • Semiconductor materials 62%
  10 引文 斯高帕斯（Scopus）

• Enhanced negative substrate bias degradation in nMOSFETs with ultrathin plasma nitrided oxide

  Perng, T. H., Chien, C-H., Chen, C. W., Lin, H-C., Chang, C. Y. & Huang, T. Y., 1 5月 2003, 於: IEEE Electron Device Letters. 24, 5, p. 333-335 3 p.

  研究成果: Article › 同行評審

  • Gate dielectrics 100%
  • Plasmas 80%
  • Hot electrons 78%
  • Oxides 75%
  • Substrates 62%
  4 引文 斯高帕斯（Scopus）

• Enhanced performance of poly(3-hexylthiophenes) based thin film transistors using double-coated active layer

  Changa, C. H. & Chien, C-H., 1 12月 2012, 於: ECS Journal of Solid State Science and Technology. 1, 6

  研究成果: Article › 同行評審

  • Thin film transistors 100%
  • Doping (additives) 87%
  • Carbon nanotubes 82%
  • Annealing 77%
  • Single Walled Nanotube 72%

• Enhancing charge collection in dye-sensitized solar cells by trimming sidewall of the TiO ₂ nanotubes

  Kuo, Y. Y., Lin, J. G. & Chien, C-H., 6 1月 2012, 於: Journal of the Electrochemical Society. 159, 2

  研究成果: Article › 同行評審

  開啟存取

  • Dye-sensitized solar cells 100%
  • Nanotubes 87%
  • Trimming 85%
  • Nanotube 55%
  • Photocurrent 42%
  3 引文 斯高帕斯（Scopus）

• Enhancing the performance of germanium channel nMOSFET using phosphorus dopant segregation

  Chen, C. W., Tzeng, J. Y., Chung, C. T., Chien, H. P., Chien, C-H., Luo, G. L., Wang, P. Y. & Tsui, B-Y., 1 1月 2014, 於: IEEE Electron Device Letters. 35, 1, p. 6-8 3 p., 6679233.

  研究成果: Article › 同行評審

  • Transconductance 100%
  • Germanium 87%
  • Leakage Current 85%
  • Phosphorus 78%
  • Fermi Level 75%
  14 引文 斯高帕斯（Scopus）

• Enhancing the thermal stability of GaSb Schottky-Barrier MOSFET with Pt Source/Drain

  Tsai, M. L., Chang, Y. P. & Chien, C-H., 1 7月 2018, 於: IEEE Electron Device Letters. 39, 7, p. 939-942 4 p.

  研究成果: Article › 同行評審

  • Schottky Barrier 100%
  • MOSFET devices 85%
  • Thermodynamic stability 75%
  • Field Effect 72%
  • Thermal Stability 48%
  5 引文 斯高帕斯（Scopus）

• Epitaxial germanium on soi substrate and its application of fabricating high i on I_OFF ratio Ge FinFETs

  Chung, C. T., Chen, C. W., Lin, J. C., Wu, C. C., Chien, C-H., Luo, G. L., Kei, C. C. & Hsiao, C. N., 29 5月 2013, 於: IEEE Transactions on Electron Devices. 60, 6, p. 1878-1883 6 p., 6515139.

  研究成果: Article › 同行評審

  • Germanium 100%
  • Field effect transistors 79%
  • Field Effect 74%
  • Substrates 52%
  • Silicon 25%
  11 引文 斯高帕斯（Scopus）

• Experimental demonstration of (111)-oriented GaAs metal-oxide-semiconductor field-effect-transistors with hetero-epitaxial Ge source/drain

  Han, T. Y., Luo, G. L., Cheng, C. C., Ko, C. H., Wann, C. H., Kei, C. C., Hsiao, C. N. & Chien, C-H., 1 1月 2014, 於: ECS Journal of Solid State Science and Technology. 3, 4, p. P86-P90

  研究成果: Article › 同行評審

  開啟存取

  • Solid Solubility 100%
  • MOSFET devices 88%
  • Density of State 81%
  • Field Effect 75%
  • Demonstrations 62%