Chao-Hsin Chien

查看斯高帕斯 (Scopus) 概要

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電子郵件chchienfaculty.nctu.edutw
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每年研究成果

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155 Article
37 Conference contribution
9 Paper
6 Conference article
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200個結果中的 - 210210

2020
Time-Dependent Dielectric Breakdown of Gate Oxide on 4H-SiC with Different Oxidation and Isolation Processes
Wang, Y. J., Huang, Y. T., Tsui, B. Y. & Chien, C. H., 20 7月 2020, 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2020. Institute of Electrical and Electronics Engineers Inc., 9260714. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; 卷 2020-July).
研究成果: Conference contribution › 同行評審
1 引文斯高帕斯（Scopus）
2021
High-Interface-Quality Hf-Based Gate Stacks on Si_0.5Ge_0.5Through Aluminum Capping
Lee, M. C., Lee, W. L., Lin, H. R., Luo, G. L. & Chien, C. H., 1 12月 2021, 於: Ieee Electron Device Letters. 42, 12, p. 1723-1726 4 p.
研究成果: Article › 同行評審
3 引文斯高帕斯（Scopus）
Improving thermal stability for ge p-mosfet of HfO₂-based gate stack with ti-doped into interfacial layer by in-situ plasma-enhanced atomic layer deposition
Li, H. H., Tsai, Y. H., Lin, Y. H. & Chien, C-H., 8月 2021, 於: Ieee Electron Device Letters. 42, 8, p. 1109-1111 3 p., 9448269.
研究成果: Article › 同行評審
1 引文斯高帕斯（Scopus）
Influence of Ti doping on the band gap and thermal stability of ultrathin GeO_xfilms
Yang, Y. C., Tsai, Y. H., Amrit, P., Chen, T. Y., Liu, H. T., Tang, S. J., Lin, C-L. & Chien, C-H., 8月 2021, 於: Journal of Physics D: Applied Physics. 54, 34, p. 1-7 7 p., 345102.
研究成果: Article › 同行評審
Time-dependent dielectric breakdown of gate oxide on 4H-SiC with different oxidation processes
Tsui, B-Y., Huang, Y. T., Wu, T-L. & Chien, C-H., 8月 2021, 於: Microelectronics Reliability. 123, 6 p., 114186.
研究成果: Article › 同行評審
2 引文斯高帕斯（Scopus）
2022
Aggressive Equivalent Oxide Thickness of 0.7 nm on Si_0.8Ge_0.2Through HfO₂ Dielectric Direct Deposition
Lee, M. C., Zhao, Y. Y., Chen, W. L., Wang, S. Y., Chen, Y. X., Luo, G. L. & Chien, C. H., 1 10月 2022, 於: Ieee Electron Device Letters. 43, 10, p. 1605-1608 4 p.
研究成果: Article › 同行評審
Electrical Characteristics of Si_0.8Ge_0.2p-MOSFET With TMA Pre-Doping and NH₃Plasma IL Treatment
Lee, M. C., Chung, N. J., Lin, H. R., Lee, W. L., Chung, Y. Y., Wang, S. Y., Luo, G. L. & Chien, C. H., 1 4月 2022, 於: IEEE Transactions on Electron Devices. 69, 4, p. 1776-1780 5 p.
研究成果: Article › 同行評審
1 引文斯高帕斯（Scopus）
GaN-based mini-LED matrix applied to multi-functional forward lighting
Nguyen, Q. K., Lin, Y. J., Sun, C., Lee, X. H., Lin, S. K., Wu, C. S., Yang, T. H., Wu, T. L., Lee, T. X., Chien, C. H., Yu, Y. W. & Sun, C. C., 12月 2022, 於: Scientific reports. 12, 1, 6444.
研究成果: Article › 同行評審

開啟存取
Impact of High-Temperature Annealing on Interfacial Layers Grown by O₂ Plasma on Si0.₅Ge_0.5 Substrates
Lee, M. C., Lin, H. R., Lee, W. L., Chung, N. J., Luo, G. L. & Chien, C. H., 1 3月 2022, 於: IEEE Transactions on Electron Devices. 69, 3, p. 1265-1270 6 p.
研究成果: Article › 同行評審
1 引文斯高帕斯（Scopus）
Van der Waals epitaxy of 2D h -AlN on TMDs by atomic layer deposition at 250 °c
Chang, S. J., Wang, S. Y., Huang, Y. C., Chih, J. H., Lai, Y. T., Tsai, Y. W., Lin, J. M., Chien, C. H., Tang, Y. T. & Hu, C., 18 4月 2022, 於: Applied Physics Letters. 120, 16, 162102.
研究成果: Article › 同行評審
5 引文斯高帕斯（Scopus）

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