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查看斯高帕斯 (Scopus) 概要
簡 昭欣
教授
半導體工程學系
智慧半導體奈米系統技術研究中心
https://orcid.org/0000-0002-6698-6752
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2420
引文
25
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514
引文
12
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
303
引文
10
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1993 …
2025
每年研究成果
概覽
指紋
網路
計畫
(22)
研究成果
(243)
類似的個人檔案
(7)
指紋
查看啟用 Chao-Hsin Chien 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Material Science
Oxide Compound
100%
Dielectric Material
73%
Metal-Oxide-Semiconductor Field-Effect Transistor
47%
Density
43%
Annealing
40%
Silicon
39%
Film
38%
Transistor
37%
Capacitor
34%
Germanium
34%
Thin-Film Transistor
32%
Field Effect Transistor
27%
Thin Films
24%
Monolayers
22%
Al2O3
21%
Thermal Stability
19%
Contact Resistance
18%
Capacitance
18%
Surface (Surface Science)
17%
Electrical Property
17%
Metal Oxide
16%
Oxide Semiconductor
15%
Charge Trapping
15%
Ferroelectric Material
14%
Buffer Layer
14%
Nitride Compound
14%
Hafnium
13%
Gallium Arsenide
12%
X-Ray Photoelectron Spectroscopy
12%
Transition Metal Dichalcogenide
10%
Carbon Nanotube
10%
Chemical Vapor Deposition
10%
Oxidation Reaction
10%
Silicate
9%
Epitaxy
9%
Bismuth
9%
Ferroelectricity
8%
Sol-Gel
8%
Titanium
8%
Strontium
7%
Type Metal
7%
Boron
7%
Electrical Resistivity
7%
Nitriding
7%
Schottky Barrier
7%
Permittivity
7%
Tantalum
6%
Cerium Oxide
6%
Nanowire
6%
Doping (Additives)
6%
Keyphrases
HfO2
63%
MOSFET
40%
Gate Stack
37%
High Performance
35%
Ultrathin
32%
Interfacial Layer
29%
Gate Dielectric
28%
P-channel
27%
Aluminum Oxide
24%
Electrical Properties
23%
Annealing
23%
Germanium
22%
Thin-film Transistors
21%
Electrical Characteristics
19%
Nitrided Oxide
18%
Silica
18%
Ultra-thin Gate Oxide
18%
Dielectric
17%
Oxides
17%
High-k Dielectric
17%
Equivalent Oxide Thickness
16%
Si Substrate
16%
Flash Memory
15%
GeOx
15%
Subthreshold Swing
15%
Transistor
15%
Capacitors
14%
Charge Plasma
14%
Top Gate
14%
NMOSFET
14%
SiGe
14%
Charging Damage
14%
Leakage Current
14%
Thermal Stability
13%
In Situ
13%
Charge Trapping
13%
Interface State Density
13%
PMOSFET
12%
Low Temperature
12%
On-state Current
11%
Gallium Arsenide
11%
Post-deposition Annealing
11%
Ge Substrate
11%
Gate Leakage Current
11%
Plasma-enhanced Atomic Layer Deposition (PEALD)
10%
Non-volatile Memory
10%
Contact Resistance
10%
Oxide Nitride
10%
Atomic Layer Deposition
10%
Buffer Layer
10%
Engineering
Metal-Oxide-Semiconductor Field-Effect Transistor
50%
Gate Stack
36%
Dielectrics
33%
Gate Oxide
25%
Gate Dielectric
24%
Interfacial Layer
24%
Oxide Thickness
21%
Thin-Film Transistor
19%
Silicon Dioxide
17%
Atomic Layer Deposition
17%
Thin Films
16%
Molybdenum Disulfide
13%
Field-Effect Transistor
13%
Monolayers
13%
Interface State
13%
Polysilicon
11%
Si Substrate
11%
Channel Length
10%
Metal Oxide Semiconductor
10%
Field Effect Transistor
10%
Gallium Arsenide
10%
Tunnel Construction
10%
Antenna
10%
Carbon Nanotube
10%
Ray Photoelectron Spectroscopy
10%
Ge Substrate
10%
Low-Temperature
9%
Nanowire
9%
Chemical Vapor Deposition
8%
Experimental Result
8%
Plasma Treatment
8%
Flash Memory
8%
Drain Electrode
8%
Band Gap
8%
Current Ratio
7%
Schottky Barrier
7%
Rapid Thermal Annealing
7%
Silicon Substrate
7%
Barrier Height
7%
Vapor Deposition
7%
Contact Length
6%
Nanoscale
6%
Negative-Bias Temperature Instability
6%
Electrical Performance
6%
Transition Metal Dichalcogenide
5%
Atomic Layer
5%
Channel Transistor
5%
Metal Contact
5%
Gate Electrode
5%
Induced Damage
5%
