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查看斯高帕斯 (Scopus) 概要
簡 昭欣
教授
電子研究所
智慧半導體奈米系統技術研究中心
https://orcid.org/0000-0002-6698-6752
h-index
h10-index
h5-index
2009
引文
22
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
366
引文
11
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
104
引文
5
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1993 …
2022
每年研究成果
概覽
指紋
網路
計畫
(22)
研究成果
(215)
類似的個人檔案
(12)
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指紋
查看啟用 Chao-Hsin Chien 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Engineering & Materials Science
Oxides
100%
Annealing
68%
Plasmas
68%
Germanium
64%
Substrates
63%
Gate dielectrics
61%
Metals
52%
Thin film transistors
48%
Leakage currents
45%
Interface states
43%
MOSFET devices
40%
Polysilicon
39%
Flash memory
37%
Field effect transistors
34%
Ferroelectric materials
32%
Data storage equipment
32%
Buffer layers
31%
Electric properties
31%
Silicon
31%
Aluminum oxide
28%
Doping (additives)
27%
Thin films
27%
Oxide semiconductors
27%
Charge trapping
26%
Nanocrystals
26%
Capacitors
25%
Transistors
25%
Temperature
23%
X ray photoelectron spectroscopy
22%
Atomic layer deposition
22%
Chemical vapor deposition
22%
Degradation
22%
Thermodynamic stability
21%
Nitrides
21%
Hafnium
20%
Silicon oxides
19%
Monolayers
18%
FinFET
18%
Electric potential
18%
Electrodes
18%
Nitrogen
17%
Demonstrations
17%
High-k dielectric
16%
Oxidation
16%
Capacitance
16%
Semiconductor materials
15%
Silicates
15%
Nickel
15%
Contact resistance
15%
Nitridation
14%
Chemical Compounds
Dielectric Material
65%
Oxide
56%
Leakage Current
47%
Annealing
46%
Field Effect
38%
Capacitor
37%
Electrical Property
24%
Plasma
22%
Voltage
22%
Liquid Film
22%
Hafnium Atom
18%
Interface State
18%
Atomic Layer Epitaxy
18%
Contact Resistance
17%
Metal
15%
Semiconductor
15%
Buffer Solution
15%
Density of Interface States
14%
Thermal Stability
13%
Compound Mobility
13%
X-Ray Photoelectron Spectroscopy
13%
Transconductance
12%
Nonconductor
12%
Application
11%
Schottky Barrier
11%
Tunneling
11%
Hot Electron
11%
Laser Annealing
11%
Rapid Thermal Annealing
11%
Electron Particle
10%
Monolayer
10%
Nanocrystal
10%
Diffusion
10%
Metal Oxide
9%
Germanide
9%
Hysteresis
9%
Surface
9%
Point Group C∞V
8%
Doping Material
8%
Behavior as Electrode
8%
Ashing
8%
Length
8%
Epitaxial Growth
8%
Electric Field
8%
Plasma Chemical Vapour Deposition
8%
Electronic Band Structure
8%
Alloy
7%
Fermi Level
7%
Nitride
7%
Conductance
7%
Physics & Astronomy
field effect transistors
36%
metal oxide semiconductors
34%
oxides
32%
annealing
26%
trapping
23%
thin films
22%
transistors
22%
leakage
21%
capacitors
18%
flash
14%
capacitance
13%
silicon
13%
electrical properties
12%
nanocrystals
12%
performance
12%
bismuth
12%
strontium
11%
buffers
11%
silicon oxides
11%
metals
11%
germanium
11%
nitrogen
10%
gels
10%
insulators
10%
nitrides
10%
CMOS
9%
electric potential
9%
damage
8%
cerium oxides
8%
electric contacts
8%
tantalum
8%
traps
8%
degradation
8%
nickel
8%
hafnium oxides
8%
thermal stability
7%
electrodes
7%
endurance
7%
breakdown
7%
silicates
7%
passivity
7%
contact resistance
7%
hafnium
6%
vapor deposition
6%
oxidation
6%
hysteresis
6%
temperature
6%
atomic layer epitaxy
6%
retarding
6%
