每年專案
個人檔案
研究專長
半導體物理與元件、積體電路製程、電性量測分析
經歷
1992/10~1997/07 工研院電子所身次奈米技術組正工程師
1999/08~迄今 國立交通大學電子工程學系/電子研究所教授
2007/08~2012/07 國立交通大學奈米中心主任
教育/學術資格
PhD, 電機工程, 國立陽明交通大學
外部位置
指紋
查看啟用 Bing-Yue Tsui 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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過去五年中的合作和熱門研究領域
國家/地區層面的近期外部共同作業。按一下圓點深入探索詳細資料,或
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碳化矽單晶片功率系統平台-總計畫暨子計畫一:碳化矽互補式金氧半場效應電晶體元件與積體電路製程技術(2/2)
Tsui, B.-Y. (PI)
1/05/21 → 30/04/23
研究計畫: Other Government Ministry Institute
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碳化矽單晶片功率系統平台-總計畫暨子計畫一:碳化矽互補式金氧半場效應電晶體元件與積體電路製程技術(1/2)
Tsui, B.-Y. (PI)
1/05/20 → 31/07/21
研究計畫: Other Government Ministry Institute
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碳化矽單晶片功率系統平台-總計畫暨子計畫一:碳化矽互補式金氧半場效應電晶體元件與積體電路製程技術(2/2)
Tsui, B.-Y. (PI)
1/05/19 → 30/04/20
研究計畫: Other Government Ministry Institute
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A Novel Separated Source Electrodes Kelvin (SSEK) Structure for Extracting Channel Mobility in the 4H-SiC VDMOSFET
Chen, W. S., Li, A. C., Hung, C. L., Hsiao, Y. K. & Tsui, B. Y., 2025, ICMTS 2025 - Proceedings of the 2025 IEEE 37th International Conference on Microelectronic Test Structures, ICMTS 2025. Institute of Electrical and Electronics Engineers Inc., (IEEE International Conference on Microelectronic Test Structures).研究成果: Conference contribution › 同行評審
1 引文 斯高帕斯(Scopus) -
A Symmetric 4H-SiC CMOS Inverter with Self-aligned PMOSFET Counter Doping
Chen, C. H., Chang, C. S., Huang, H. L., Wang, C. Y., Tsai, C. Y., Chen, Y. Y., Chen, H. M., Yen, C. H. & Tsui, B. Y., 2025, 2025 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2025 - Proceedings of Technical Papers. Institute of Electrical and Electronics Engineers Inc., (2025 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2025 - Proceedings of Technical Papers).研究成果: Conference contribution › 同行評審
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Comparative Analysis of Power Devices in Power Supply Units for AI Server Applications
Tsai, S. Q., Chen, W. C., Gundabathina, P., Tu, C. C., Hung, C. L., Hsiao, Y. K., Tsui, B.-Y. & Chen, P. H., 2025, 2025 IEEE Energy Conversion Congress and Exposition Asia: Shaping a Greener Future with Power Electronics, ECCE-Asia 2025. Institute of Electrical and Electronics Engineers Inc., (2025 IEEE Energy Conversion Congress and Exposition Asia: Shaping a Greener Future with Power Electronics, ECCE-Asia 2025).研究成果: Conference contribution › 同行評審
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Impact of Gamma Ray Irradiation on the Blocking Characteristics of Edge Termination on 4H-SiC and a Novel Anti-Ionizing Radiation Technology
Chen, C. H., Tsui, B. Y. & Chao, D. S., 2025, 於: IEEE Journal of the Electron Devices Society. 13, p. 472-476 5 p.研究成果: Article › 同行評審
開啟存取1 引文 斯高帕斯(Scopus) -
Impact of near interface defects on NO annealed SiC MOSFET mobility
Wen, Y. X., Tsui, B. Y. & Cheung, K. P., 10月 2025, 於: Microelectronics Reliability. 173, 115841.研究成果: Article › 同行評審
2 引文 斯高帕斯(Scopus)