每年專案
個人檔案
研究專長
半導體物理與元件、積體電路製程、電性量測分析
經歷
1992/10~1997/07 工研院電子所身次奈米技術組正工程師
1999/08~迄今 國立交通大學電子工程學系/電子研究所教授
2007/08~2012/07 國立交通大學奈米中心主任
教育/學術資格
PhD, 國立陽明交通大學
外部位置
指紋
查看啟用 Bing-Yue Tsui 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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網路
國家/地區層面的近期外部共同作業。按一下圓點深入探索詳細資料,或
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碳化矽單晶片功率系統平台-總計畫暨子計畫一:碳化矽互補式金氧半場效應電晶體元件與積體電路製程技術(2/2)
1/05/21 → 31/10/22
研究計畫: Ministry of Science and Technology
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碳化矽單晶片功率系統平台-總計畫暨子計畫一:碳化矽互補式金氧半場效應電晶體元件與積體電路製程技術(1/2)
1/05/20 → 31/07/21
研究計畫: Ministry of Science and Technology
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碳化矽單晶片功率系統平台-總計畫暨子計畫一:碳化矽互補式金氧半場效應電晶體元件與積體電路製程技術(2/2)
1/05/19 → 30/04/20
研究計畫: Ministry of Science and Technology
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Defect Inspection Techniques in SiC
Chen, P. C., Miao, W. C., Ahmed, T., Pan, Y. Y., Lin, C. L., Chen, S. C., Kuo, H. C., Tsui, B. Y. & Lien, D. H., 2022, 於: Nanoscale Research Letters. 17, 1, 30.研究成果: Review article › 同行評審
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Design, Process, and Characterization of Complementary Metal-Oxide-Semiconductor Circuits and Six-Transistor Static Random-Access Memory in 4H-SiC
Hung, C. L., Tsui, B. Y., Tsai, T. K., Lin, L. J. & Wen, Y. X., 4月 2022, 於: ECS Journal of Solid State Science and Technology. 11, 4, 045001.研究成果: Article › 同行評審
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Device isolation process for 4H-SiC CMOS ICs
Tsui, B. Y., Jhuang, Y. R., Lin, J. H., Huang, Y. T., Tsai, T. K., Hsu, K. T., Su, Y. H. & Hsieh, Y. F., 2022, 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. Institute of Electrical and Electronics Engineers Inc., p. 238-240 3 p. (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022).研究成果: Conference contribution › 同行評審
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Dual Gate Oxide CMOS Process on 4H-SiC
Tsui, B. Y., Hung, C. L., Tsai, T. K., Lin, L. J., Wang, T. W. & Chen, P-H., 2022, 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., p. 1-2 2 p. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).研究成果: Conference contribution › 同行評審
1 引文 斯高帕斯(Scopus) -
First Integration of 10-V CMOS Logic Circuit, 20-V Gate Driver, and 600-V VDMOSFET on a 4H-SiC Single Chip
Tsui, B. Y., Hung, C. L., Tsai, T. K., Tsui, Y. C., Wang, T. W., Wen, Y. X., Shih, C. P., Wang, J. C., Lin, L. J., Wang, C. H., Chu, K. W. & Chen, P-H., 2022, 2022 34th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022. Institute of Electrical and Electronics Engineers Inc., p. 321-324 4 p. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; 卷 2022-May).研究成果: Conference contribution › 同行評審
1 引文 斯高帕斯(Scopus)