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查看斯高帕斯 (Scopus) 概要
Useinov 阿圖爾
助理教授
國際半導體產業學院
智慧半導體奈米系統技術研究中心
https://orcid.org/0000-0001-7088-6896
電話
03-5712121#55910
電子郵件
artu
nycu.edu
tw
網站
https://sites.google.com/nctu.edu.tw/qdc-lab/home
h-index
h10-index
h5-index
256
引文
10
h-指數
按照存儲在普爾(Pure)的出版物數量及斯高帕斯(Scopus)引文計算。
135
引文
8
h-指數
按照存儲在普爾(Pure)的出版物數量及斯高帕斯(Scopus)引文計算。
55
引文
5
h-指數
按照存儲在普爾(Pure)的出版物數量及斯高帕斯(Scopus)引文計算。
2005
2024
每年研究成果
概覽
指紋
網路
計畫
(5)
研究成果
(46)
類似的個人檔案
(6)
指紋
查看啟用 Artur Useinov 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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Keyphrases
Tunneling Magnetoresistance
100%
Magnetic Tunnel Junction
80%
Embedded Nanoparticles
44%
Spin Transfer Torque
33%
Double-barrier Magnetic Tunnel Junction
32%
Point Contact
31%
Nanoparticles
26%
Non-magnetic
23%
Tunneling Electroresistance
23%
Ferroelectric Tunnel Junction
22%
Electron Transport
21%
Spin Resolved
20%
Single-barrier
20%
Tunnel Junction
19%
Screening Effect
18%
Voltage Dependence
16%
Polyphthalocyanines
16%
Conductance
16%
Magnetization
16%
Domain Walls
15%
Contact Model
15%
Applied Voltage
14%
Tunneling
14%
Asymmetrical Voltage
14%
Thomas-Fermi
13%
Ferroelectric Barriers
13%
Electrostriction Effect
13%
Magnetoresistance
13%
Transport Model
12%
Hf0.5Zr0.5O2
12%
Double Barrier
12%
Nanocontact
11%
Ballistic
11%
Nanoparticles Effect
11%
Magneto
11%
Multiferroic Tunnel Junctions
11%
Size Effect
11%
Nanoscale Heterojunctions
11%
Ferroelectric Polarization
11%
Path Effects
11%
Mean Free Path
11%
Wentzel-Kramers-Brillouin
11%
Electron Tunneling
10%
Bias Dependence
10%
Magnetic Nanoparticles
10%
Oxygen Vacancy
10%
Insulating Layer
9%
Quasi-ballistic
9%
V-curve
9%
Ferromagnetic Metal
9%
Material Science
Tunneling Magnetoresistance
96%
Nanoparticle
58%
Ferroelectric Material
57%
Electron Transfer
24%
Surface (Surface Science)
19%
Magnetoresistance
16%
Heterojunction
16%
Electrostriction
16%
Domain Wall
15%
Giant Magnetoresistance
13%
Density
13%
Transition Metal
13%
Electronic Circuit
11%
Dielectric Material
11%
Multiferroic Material
11%
Contact Area
11%
Capacitor
11%
Nanocontact
10%
Magnetic Nanoparticle
9%
Ferroelectricity
9%
Magnetic Material
8%
Thermal Stability
8%
Thin Films
8%
Contact Resistance
8%
Film
8%
Ferromagnetic Material
7%
Oxygen Vacancy
7%
Field Effect Transistor
6%
Theoretical Modeling
6%
Capacitance
6%
Anisotropy
6%
Transistor
5%
Surface Type
5%
Boron Nitride
5%
Quantum Device
5%
ZnO
5%
Coupling Constant
5%
Titanium Dioxide
5%
Semiconductor Device
5%
Superconducting Material
5%
Nanowire
5%
Nanocomposite
5%
Complex System
5%
Energy Landscape
5%
Composite Material
5%
Quantum Well
5%
Engineering
Tunnel
37%
Magnetic Tunnel Junction
31%
Spin Transfer
27%
Tunnel Construction
21%
Nanoparticle
19%
Nanoscale
16%
Diffusive
13%
Heterojunctions
12%
Contact Model
12%
Conductive
11%
Experimental Result
11%
Mean Free Path
11%
Domain Wall
10%
Dielectrics
9%
Nanocontact
8%
Contact Area
7%
Resistive
6%
Field-Effect Transistor
6%
Crystallinity
5%
Screening Effect
5%
Mathematical Description
5%
Magnetic Field
5%
Induced Voltage
5%
Frequency Domain
5%
Simulation Result
5%
Simple System
5%
Frequency Spectrum
5%
Random Number
5%
Plasma Treatment
5%
Field Emission
5%
Thin Films
5%
Field Effect Transistor
5%
Nanocomposite
5%
Diagnostic Device
5%
Magnetic Sensor
5%
Interconnects
5%
Potential Energy
5%
Nitride
5%
Interfacial Energy
5%
Computer Simulation
5%
Nanowire
5%
Brillouin Zone
5%
Fermi Level
5%