荊 鳳德

研究成果

每年研究成果 1987 2003 2004 2005 2006 2007 2008 2010 2011 2023

• 273 Article
• 88 Conference contribution
• 41 Conference article
• 17 Paper
• 29 更多
  • 10 Chapter
  • 7 Letter
  • 6 Patent
  • 3 Editorial
  • 3 Review article

每年研究成果

每年研究成果

搜尋結果

• 2004

  Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrode

  Zhu, S., Yu, H. Y., Whang, S. J., Chen, J. H., Shen, C., Zhu, C., Lee, S. J., Li, M. F., Chan, D. S. H., Yoo, W. J., Du, A., Tung, C. H., Singh, J., Chin, A. & Kwong, D. L., 1 5月 2004, 於: IEEE Electron Device Letters. 25, 5, p. 268-270 3 p.

  研究成果: Letter › 同行評審

  • Gate dielectrics 100%
  • Schottky Barrier 96%
  • Silicides 96%
  • Dielectric Material 61%
  • Transistors 59%
  106 引文 斯高帕斯（Scopus）
• 2003

  Lanthanide (Tb)-doped HfO₂ for high-density MIM capacitors

  Kim, S. J., Cho, B. J., Li, M. F., Zhu, C., Chin, A. & Kwong, D. L., 1 7月 2003, 於: IEEE Electron Device Letters. 24, 7, p. 442-444 3 p.

  研究成果: Letter › 同行評審

  • Rare earth elements 100%
  • Capacitor 73%
  • Capacitors 56%
  • Lanthanoid Atom 54%
  • Leakage Current 47%
  22 引文 斯高帕斯（Scopus）

• Low RF noise and power loss for ion-implanted Si having an improved implantation process

  Chan, K. T., Chin, A., McAlister, S. P., Chang, C-Y., Liu, J., Chien, S. C., Duh, D. S. & Lin, W. J., 1 1月 2003, 於: IEEE Electron Device Letters. 24, 1, p. 28-30 3 p.

  研究成果: Letter › 同行評審

  • Implanted Ion 100%
  • Ion implantation 95%
  • Protons 85%
  • Ions 65%
  • Electric lines 59%
  18 引文 斯高帕斯（Scopus）

• Very high density RF MIM capacitors (17 fF/μm²) using high-κ Al₂O₃ doped Ta₂O₅ dielectrics

  Yang, M. Y., Huang, C. H., Chin, A., Zhu, C., Cho, B. J., Li, M. F. & Kwong, D. L., 1 10月 2003, 於: IEEE Microwave and Wireless Components Letters. 13, 10, p. 431-433 3 p.

  研究成果: Letter › 同行評審

  • MIM (semiconductors) 100%
  • Leakage currents 75%
  • Aluminum oxide 67%
  • capacitors 61%
  • Capacitance 60%
  36 引文 斯高帕斯（Scopus）
• 2002

  Investigation of inductively coupled plasma gate oxide on low temperature polycrystalline-silicon TFTs

  Tseng, C. H., Chang, T. K., Chu, F. T., Shieh, J. M., Dai, B. T., Cheng, H-C. & Chin, A., 1 6月 2002, 於: IEEE Electron Device Letters. 23, 6, p. 333-335 3 p.

  研究成果: Letter › 同行評審

  • Inductively coupled plasma 100%
  • Polysilicon 77%
  • Inductively Coupled Plasma 66%
  • Oxides 57%
  • Interface Trap 37%
  7 引文 斯高帕斯（Scopus）

• La₂O₃/Si_0.3Ge_0.7 p-MOSFETs with high hole mobility and good device characteristics

  Huang, C. H., Chen, S. B. & Chin, A., 1 12月 2002, 於: IEEE Electron Device Letters. 23, 12, p. 710-712 3 p.

  研究成果: Letter › 同行評審

  • Hole mobility 100%
  • Hole Mobility 71%
  • Dielectric Material 53%
  • Compound Mobility 46%
  • Gate dielectrics 43%
  14 引文 斯高帕斯（Scopus）

• RF noise in 0.18-μm and 0.13-μm MOSFETs

  Huang, C. H., Lai, C. H., Hsieh, J. C., Liu, J. & Chin, A., 1 12月 2002, 於: IEEE Microwave and Wireless Components Letters. 12, 12, p. 464-466 3 p.

  研究成果: Letter › 同行評審

  • Noise figure 100%
  • field effect transistors 68%
  • Substrates 62%
  • scaling 30%
  • micrometers 13%
  1 引文 斯高帕斯（Scopus）