Albert Chin

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每年研究成果

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273 Article
88 Conference contribution
41 Conference article
17 Paper
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2017
The Nature of Defects Responsible for Transport in a Hafnia-Based Resistive Random Access Memory Element
Islamov, D. R., Perevalov, T. V., Gritsenko, V. A., Aliev, V. S., Saraev, A. A., Kaichev, V. V., Ivanova, E. V., Zamoryanskaya, M. V. & Chin, A., 1 1月 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Elsevier Inc., p. 493-504 12 p.
研究成果: Chapter › 同行評審
1 引文斯高帕斯（Scopus）
2011
CMOS technology: High performance ALD HfO₂-Al₂O₃laminate MIM capacitors for RF and mixed signal IC applications
Hu, H., Ding, S. J., Lim, H. F., Zhu, C., Li, M. F., Kim, S. J., Yu, X. F., Chen, J. H., Yong, Y. F., Cho, B. J., Chan, D. S. H., Ruslagi, S. C., Yu, M. B., Tung, C. H., Du, A., My, D., Foo, P. D., Chin, A. & Kwong, D. L., 1 1月 2011, Selected Semiconductor Research. Imperial College Press, p. 323-326 4 p.
研究成果: Chapter › 同行評審
1 引文斯高帕斯（Scopus）
Dual metal gates with band-edge work functions on novel HfLaO high-k gate dielectric
Wang, X. P., Shen, C., Li, M. F., Yu, H. Y., Sun, Y., Feng, Y. P., Lim, A., Sik, H. W., Chin, A., Yeo, Y. C., Lo, P. & Kwong, D. L., 1 1月 2011, Selected Semiconductor Research. Imperial College Press, p. 369-370 2 p.
研究成果: Chapter › 同行評審
Germanium pMOSFETs with schottky-barrier germanide S/D, high-k gate dielectric and metal gate
Zhu, S., Li, R., Lee, S. J., Li, M. F., Du, A., Singh, J., Zhu, C., Chin, A. & Kwong, D. L., 1 1月 2011, Selected Semiconductor Research. Imperial College Press, p. 346-348 3 p.
研究成果: Chapter › 同行評審
Nano CMOS device quantum simulation: Impact of surface roughness on silicon and Germanium ultra-thin-body MOSFETs
Low, T., Li, M. F., Fan, W. J., Ng, S. T., Yeo, Y. C., Zhu, C., Chin, A., Chan, L. & Kwong, D. L., 1 1月 2011, Selected Semiconductor Research. Imperial College Press, p. 441-444 4 p.
研究成果: Chapter › 同行評審
New developments in schottky source/drain high-k/metal gate CMOS transistors
Li, M. F., Lee, S., Zhu, S., Li, R., Chen, J., Chin, A. & Kwong, D. L., 1 1月 2011, Selected Semiconductor Research. Imperial College Press, p. 336-345 10 p.
研究成果: Chapter › 同行評審
New insights in Hf based high-k gate dielectrics in MOSFETs
Li, M. F., Zhu, C., Shen, C., Yu, X. F., Wang, X. P., Feng, Y. P., Du, A. Y., Yeo, Y. C., Samudra, G., Chin, A. & Kwong, D. L., 1 1月 2011, Selected Semiconductor Research. Imperial College Press, p. 349-362 14 p.
研究成果: Chapter › 同行評審
Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETs
Wang, X. F., Li, M. F., Ren, C., Yu, X. F., Shen, C., Ma, H. H., Chin, A., Zhu, C. X., Ning, J., Yu, M. B. & Kwong, D. L., 1 1月 2011, Selected Semiconductor Research. Imperial College Press, p. 366-368 3 p.
研究成果: Chapter › 同行評審
Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric
Wang, X. P., Li, M. F., Yu, H. Y., Yang, J. J., Chen, J. D., Zhu, C. X., Du, A. Y., Loh, W. Y., Biesemans, S., Chin, A., Lo, G. Q. & Kwong, D. L., 1 1月 2011, Selected Semiconductor Research. Imperial College Press, p. 383-386 4 p.
研究成果: Chapter › 同行評審
Wide V_fband V_thtunability for metal-gated mos devices with HfLaO gate dielectrics
Wang, X. P., Yu, H. Y., Li, M. F., Zhu, C. X., Biesemans, S., Chin, A., Sun, Y. Y., Feng, Y. P., Lim, A., Yeo, Y. C., Loh, W. Y., Lo, G. Q. & Kwong, D. L., 1 1月 2011, Selected Semiconductor Research. Imperial College Press, p. 374-376 3 p.
研究成果: Chapter › 同行評審

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