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查看斯高帕斯 (Scopus) 概要
荊 鳳德
教授
電子研究所
h-index
h10-index
h5-index
9549
引文
51
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
845
引文
19
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
184
引文
8
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1987 …
2025
每年研究成果
概覽
指紋
網路
計畫
(34)
研究成果
(454)
獎項
(8)
活動
(12)
影響
(6)
類似的個人檔案
(7)
指紋
查看啟用 Albert Chin 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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Keyphrases
AlGaAs
13%
Aluminum Oxide
34%
Annealing
13%
Capacitance Density
23%
Capacitors
17%
Charge Transport
10%
Dielectric
35%
Electron Mobility
9%
Equivalent Oxide Thickness
19%
Gallium Arsenide
21%
Gate Dielectric
48%
GeOx
9%
Germanium
10%
Germanium-on-insulator (GeOI)
13%
HfAlO
9%
HfLaO
18%
HfO2
34%
High Capacitance
9%
High Density
16%
High Mobility
19%
High Performance
40%
High Temperature
10%
High Work Function
11%
High-k Dielectric
14%
Ion Implantation
9%
LaAlO3
12%
Leakage Current
17%
Low Leakage Current
15%
Low Temperature
12%
Low Voltage
10%
Memory Device
12%
Memory Window
10%
Metal Gate
25%
Metal-insulator-metal Capacitor
29%
MIM Capacitor
15%
Molecular Beam Epitaxy
11%
MOSFET
54%
NFmin
13%
NMOSFET
30%
Non-volatile Memory
9%
Oxides
13%
PMOSFET
19%
Resistive Random Access Memory (ReRAM)
24%
RF MOSFET
10%
RF Noise
10%
Si Substrate
14%
Silica
39%
Silicon Nitride
9%
Thin-film Transistors
12%
Transistor
14%
Material Science
Al2O3
24%
Aluminium Gallium Arsenide
9%
Annealing
21%
Capacitance
39%
Capacitor
50%
Charge Trapping
5%
Density
43%
Dielectric Material
100%
Electrical Property
7%
Electron Mobility
11%
Electronic Circuit
17%
Ferroelectric Material
7%
Film
15%
Gallium
5%
Gallium Arsenide
16%
Germanium
9%
Heterojunction
5%
Hole Mobility
13%
Indium
5%
Indium Gallium Arsenide
7%
Ion Implantation
5%
Luminescence
5%
Metal Oxide
11%
Metal-Oxide-Semiconductor Field-Effect Transistor
59%
Molecular Beam Epitaxy
10%
Nanosheet
6%
Optical Property
5%
Oxide Compound
48%
Oxide Semiconductor
5%
Oxygen Vacancy
11%
Percolation
5%
Permittivity
5%
Phase Composition
7%
Photoluminescence
5%
Resistive Random-Access Memory
16%
Resonator
6%
Schottky Barrier
7%
Silicide
7%
Silicon
17%
Superlattice
5%
Surface (Surface Science)
8%
Thin Films
6%
Thin-Film Transistor
23%
Titanium Dioxide
7%
Titanium Oxide
6%
Transistor
20%
Transmission Electron Microscopy
6%
Zinc Oxide
5%
Zirconia
6%
Engineering
Aluminium Gallium Arsenide
10%
Band Gap
6%
Bandpass Filter
6%
Chemical Vapor Deposition
7%
Device Performance
5%
Dielectrics
40%
Electric Power Utilization
5%
Flash Memory
5%
Gallium Arsenide
19%
Gate Dielectric
35%
Gate Oxide
7%
Gate Stack
5%
Indium Gallium Arsenide
9%
Low-Temperature
18%
Metal Gate
21%
Metal Oxide Semiconductor
5%
Metal-Insulator-Metal
19%
Metal-Oxide-Semiconductor Field-Effect Transistor
79%
Nodes
8%
Noise Figure
8%
Nonvolatile Memory
5%
Oxide Thickness
21%
Oxygen Vacancy
5%
Passivation
5%
Polysilicon
5%
Quantum Well
7%
Radio Frequency
8%
Random Access Memory Device
5%
Rapid Thermal Annealing
8%
Resistive
15%
Resistive Random Access Memory
16%
Resonator
6%
Si Substrate
10%
Silicon Dioxide
20%
Subthreshold Slope
5%
Superlattice
8%
Thin Films
5%
Thin-Film Transistor
14%
Tunnel Construction
5%
Vapor Deposition
6%
VLSI Circuits
7%
