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查看斯高帕斯 (Scopus) 概要
荊 鳳德
教授
電子研究所
h-index
h10-index
h5-index
9512
引文
51
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
832
引文
18
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
176
引文
8
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1987 …
2025
每年研究成果
概覽
指紋
網路
計畫
(34)
研究成果
(454)
獎項
(8)
活動
(12)
影響
(6)
類似的個人檔案
(7)
指紋
查看啟用 Albert Chin 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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Keyphrases
MOSFET
54%
Gate Dielectric
48%
High Performance
41%
Silica
39%
Dielectric
35%
Aluminum Oxide
35%
HfO2
34%
NMOSFET
30%
Metal-insulator-metal Capacitor
30%
Resistive Random Access Memory (ReRAM)
24%
Metal Gate
24%
Capacitance Density
24%
Gallium Arsenide
21%
PMOSFET
19%
Equivalent Oxide Thickness
19%
High Mobility
19%
HfLaO
18%
Capacitors
17%
Leakage Current
17%
High Density
16%
MIM Capacitor
15%
Low Leakage Current
15%
Si Substrate
14%
High-k Dielectric
14%
AlGaAs
14%
Oxides
13%
Transistor
13%
Germanium-on-insulator (GeOI)
13%
NFmin
13%
Annealing
13%
Memory Device
12%
LaAlO3
12%
Thin-film Transistors
12%
Low Temperature
12%
Molecular Beam Epitaxy
11%
High Work Function
11%
Charge Transport
11%
Germanium
10%
RF Noise
10%
High Temperature
10%
Low Voltage
10%
Memory Window
10%
RF MOSFET
10%
GeOx
9%
HfAlO
9%
High Capacitance
9%
Silicon Nitride
9%
Non-volatile Memory
9%
Electron Mobility
9%
Ion Implantation
9%
Material Science
Dielectric Material
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
58%
Capacitor
51%
Oxide Compound
48%
Density
43%
Capacitance
39%
Al2O3
24%
Thin-Film Transistor
23%
Annealing
21%
Transistor
19%
Silicon
17%
Electronic Circuit
17%
Gallium Arsenide
17%
Resistive Random-Access Memory
16%
Film
15%
Hole Mobility
13%
Metal Oxide
11%
Oxygen Vacancy
11%
Electron Mobility
11%
Molecular Beam Epitaxy
10%
Aluminium Gallium Arsenide
9%
Germanium
9%
Surface (Surface Science)
8%
Electrical Property
7%
Ferroelectric Material
7%
Titanium Dioxide
7%
Phase Composition
7%
Indium Gallium Arsenide
7%
Titanium Oxide
6%
Schottky Barrier
6%
Zirconia
6%
Silicide
6%
Nanosheet
6%
Thin Films
6%
Transmission Electron Microscopy
6%
Resonator
6%
Optical Property
5%
Charge Trapping
5%
Oxide Semiconductor
5%
Heterojunction
5%
Permittivity
5%
Zinc Oxide
5%
Photoluminescence
5%
Superlattice
5%
Ion Implantation
5%
Luminescence
5%
Gallium
5%
Indium
5%
Percolation
5%
Engineering
Metal-Oxide-Semiconductor Field-Effect Transistor
79%
Dielectrics
40%
Gate Dielectric
35%
Metal Gate
21%
Oxide Thickness
21%
Silicon Dioxide
20%
Metal-Insulator-Metal
19%
Gallium Arsenide
19%
Low-Temperature
18%
Resistive Random Access Memory
16%
Resistive
15%
Thin-Film Transistor
14%
Aluminium Gallium Arsenide
10%
Si Substrate
10%
Indium Gallium Arsenide
9%
Superlattice
8%
Noise Figure
8%
Radio Frequency
8%
Nodes
8%
Rapid Thermal Annealing
8%
Chemical Vapor Deposition
7%
Gate Oxide
7%
VLSI Circuits
7%
Quantum Well
7%
Vapor Deposition
6%
Bandpass Filter
6%
Band Gap
6%
Resonator
6%
Nonvolatile Memory
5%
Device Performance
5%
Polysilicon
5%
Random Access Memory Device
5%
Oxygen Vacancy
5%
Gate Stack
5%
Flash Memory
5%
Passivation
5%
Electric Power Utilization
5%
Thin Films
5%
Subthreshold Slope
5%
Metal Oxide Semiconductor
5%
Tunnel Construction
5%
