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查看斯高帕斯 (Scopus) 概要
荊 鳳德
教授
電子研究所
電話
03-5731841
電子郵件
achin
faculty.nctu.edu
tw
網站
http://web.it.nctu.edu.tw/~achin/
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6889
引文
46
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984
引文
17
h-指數
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306
引文
11
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1987 …
2023
每年研究成果
概覽
指紋
網路
計畫
(34)
研究成果
(448)
獎項
(8)
活動
(12)
影響
(6)
類似的個人檔案
(12)
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指紋
查看啟用 Albert Chin 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Engineering & Materials Science
Gate dielectrics
100%
Metals
69%
Oxides
58%
Leakage currents
53%
Capacitors
51%
Hole mobility
42%
Capacitance
41%
Substrates
35%
Data storage equipment
35%
Electron mobility
30%
Aluminum oxide
30%
Electric potential
30%
Thin film transistors
26%
Temperature
26%
Threshold voltage
24%
Annealing
23%
Transistors
20%
Rapid thermal annealing
19%
Electrodes
19%
Charge trapping
19%
Noise figure
19%
Germanium
18%
Silicon
15%
Ion implantation
14%
Fabrication
12%
Durability
12%
Protons
12%
Electrons
12%
MOSFET devices
12%
Crystallization
11%
RRAM
11%
Light emission
11%
Tunnel diodes
11%
VLSI circuits
11%
Conduction bands
11%
Flash memory
10%
Oxygen vacancies
10%
Silicides
9%
Doping (additives)
9%
High-k dielectric
9%
Tuning
9%
Polysilicon
8%
Scattering parameters
8%
Ions
8%
Bandpass filters
8%
Ferroelectric materials
8%
Energy gap
8%
Charge transfer
7%
Gallium
7%
Microstrip lines
7%
Chemical Compounds
Dielectric Material
68%
Leakage Current
55%
Capacitor
46%
Voltage
41%
Compound Mobility
31%
Work Function
26%
Oxide
24%
Hole Mobility
18%
Electron Mobility
16%
Laser Annealing
12%
Rapid Thermal Annealing
12%
Field Effect
11%
Application
9%
Interface Trap
9%
Metal
8%
Behavior as Electrode
8%
Metal Oxide
8%
Annealing
8%
Semiconductor
8%
Ion Implantation
7%
Energy
7%
Liquid Film
6%
Sheet Resistance
5%
Schottky Barrier
5%
Superlattice
5%
Time
5%
Nonconductor
5%
Trap Density Measurement
5%
Resistance
5%
Dioxygen
5%
Physics & Astronomy
field effect transistors
24%
capacitors
19%
CMOS
17%
performance
16%
insulators
15%
metals
15%
very large scale integration
13%
random access memory
13%
leakage
13%
transistors
12%
traps
12%
aluminum gallium arsenides
12%
capacitance
12%
metal oxide semiconductors
11%
oxides
11%
tunnel diodes
10%
endurance
9%
molecular beam epitaxy
9%
electric potential
8%
MIM (semiconductors)
8%
silicon
7%
radio frequencies
7%
germanium
7%
voltage controlled oscillators
7%
light emission
7%
thin films
6%
annealing
6%
photoluminescence
6%
low voltage
6%
bandpass filters
5%
trapping
5%
quantum wells
5%
optical properties
5%
inductors
5%
metal oxides
5%
augmentation
5%
