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High Linearity and Low Noise Au-Free Ohmic Contact AlGaN/GaN HEMT Using Patterned Ohmic Recess for Ka-Band Applications
Tseng, H., Chen, Y. C., Lin, Y. C. & Chang, E. Y., 2025, 2025 16th German Microwave Conference, GeMiC 2025. Institute of Electrical and Electronics Engineers Inc., p. 530-533 4 p. (2025 16th German Microwave Conference, GeMiC 2025).
研究成果: Conference contribution › 同行評審
Novel Gate Fabrication Process Enhancing High-Frequency Operation in AlGaN/GaN HEMTs for Ka-Band Applications
Li, N. D., Lin, Y. C., Chen, K. W., Hsu, H. T., Tsao, Y. F. & Chang, E. Y., 2025, 於: IEEE Journal of the Electron Devices Society. 13, p. 593-598 6 p.
研究成果: Article › 同行評審

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Study of Hybrid Schottky - Ohmic Source and Drain AlGaN/GaN HEMTs for Low Noise Application
Li, N. D., Chang, H. H., Yang, C. H., Lin, Y. C. & Chang, E. Y., 2025, 2025 16th German Microwave Conference, GeMiC 2025. Institute of Electrical and Electronics Engineers Inc., p. 608-610 3 p. (2025 16th German Microwave Conference, GeMiC 2025).
研究成果: Conference contribution › 同行評審

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