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A Tall Gate Stem GaN HEMT with Improved Power Density and Efficiency at Ka-Band
Lee, P. H., Lin, Y. C., Hsu, H. T., Tsao, Y. F., Dee, C. F., Su, P. & Chang, E. Y., 2023, (Accepted/In press) 於: IEEE Journal of the Electron Devices Society. p. 1 1 p.
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Study of p-GaN Gate MOS-HEMT with Al₂O₃ Insulator for High-Power Applications
Huang, K. N., Lin, Y. C., Wu, C. Y., Lee, J. H., Hsu, C. C., Yao, J. N., Chien, C. H. & Chang, E. Y., 2023, (Accepted/In press) 於: Journal of Electronic Materials.
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A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer
Weng, Y. C., Lin, Y. C., Hsu, H. T., Kao, M. L., Huang, H. Y., Ueda, D., Ha, M. T. H., Yang, C. Y., Maa, J. S., Chang, E. Y. & Dee, C. F., 1 2月 2022, 於: Materials. 15, 3, p. 1-10 10 p., 703.
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1 引文斯高帕斯（Scopus）

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