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前瞻半導體研究所
國立陽明交通大學
產學創新研究學院
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人員
(5)
計畫
(4)
研究成果
(674)
指紋
查看啟用 前瞻半導體研究所 的研究主題。這些主題標籤來自此機構會員的作品。共同形成了獨特的指紋。
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重量
按字母排序
Material Science
Graphene
100%
Field Effect Transistor
92%
Oxide Compound
86%
Film
65%
Transistor
60%
Silicon
52%
Nanoribbon
46%
Annealing
44%
Surface (Surface Science)
44%
Density
42%
Ferroelectric Material
30%
Electronic Circuit
29%
Metal-Oxide-Semiconductor Field-Effect Transistor
28%
Thin Films
27%
Capacitance
26%
Dielectric Material
23%
Gadolinium
23%
Nanowire
22%
Hafnium
22%
Monolayers
20%
Heterojunction
19%
Semiconductor Structure
16%
Charge Trapping
16%
Electron Mobility
14%
Capacitor
14%
Ion Sensitive Field Effect Transistor
14%
Perovskite Solar Cell
13%
Thermoelectrics
13%
X-Ray Photoelectron Spectroscopy
13%
Indium Tin Oxide
13%
Oxidation Reaction
12%
Silicon Nitride
12%
Oxide Semiconductor
11%
Electrical Resistivity
11%
Two-Dimensional Material
10%
Semimetals
9%
Transmission Electron Microscopy
9%
Nitride Compound
9%
Zinc Oxide
9%
Thermal Stability
9%
Nanosphere
9%
Ion Implantation
9%
Urea
9%
Surface-Enhanced Raman Spectroscopy
9%
Potassium Ion
8%
Germanium
8%
Schottky Barrier
8%
Nanoparticle
8%
Carrier Transport
8%
Electron Transfer
8%
Metal Oxide
8%
Electrical Property
8%
Solar Cell
7%
Surface Roughness
7%
Transition Metal Dichalcogenide
7%
X-Ray Diffraction
7%
Chemical Vapor Deposition
7%
Tungsten
6%
Silver
6%
Energy Levels
6%
Semiconductor Device
6%
Tin
6%
Indium
6%
Zirconia
6%
Lithography
6%
Grain Boundary
6%
Nanostructure
6%
Atomic Force Microscopy
6%
Light-Emitting Diode
5%
Oxygen Vacancy
5%
Electronic Property
5%
High-Resolution Transmission Electron Microscopy
5%
Gallium Arsenide
5%
Polystyrene
5%
Nanorod
5%
Molybdenum
5%
Neuromorphic Computing
5%
Resistive Random-Access Memory
5%
Spin Polarization
5%
Gallium
5%
Surface Plasmon Resonance
5%
Surface Treatment
5%
Phase Composition
5%
Keyphrases
Graphene
34%
Sensing Membrane
31%
HfO2
30%
Graphene Nanoribbon
30%
Transistor
29%
Resistive Random Access Memory (ReRAM)
29%
Field-effect Transistors
28%
PH-sensitive
27%
Device Performance
26%
Electrolyte-insulator-semiconductor
26%
Rapid Thermal Annealing
25%
Non-volatile Memory
24%
MOSFET
24%
PH Sensing
23%
Gd2O3
23%
Light-addressable Potentiometric Sensor
21%
Silica
21%
Annealing
18%
Low Power
17%
Silicon Nitride
15%
EGFET
15%
Plasma Treatment
15%
Semiconductor Structures
15%
Computational Study
14%
Room Temperature
14%
CF4 Plasma Treatment
14%
Two Dimensional
14%
Memory Application
14%
Ultra-thin Body
14%
Polysilicon
13%
GaN HEMT
13%
ISFET
13%
PH Sensor
13%
CF4 Plasma
13%
Resistive Switching
13%
Nanocrystals
12%
Hafnium Oxide
12%
Gadolinium Oxide
12%
Data Retention
12%
Fluorinated
12%
Oxides
11%
Germanium-tin
11%
PH Detection
11%
Si Substrate
11%
Silicon Nanowires (SiNWs)
11%
Temperature Effect
11%
Bilayer Graphene
11%
Band Gap
10%
Storage Characteristics
10%
III-V
10%
High Performance
10%
Molybdenite
10%
Energy Efficient
10%
On-state Current
9%
Nonequilibrium Green's Function
9%
Oxide Layer
9%
Low Temperature
9%
Ultrathin
9%
Hydrogen Ion
9%
Tunnel Field-effect Transistor
9%
Indium Tin Oxide
9%
Banded Structure
9%
Dynamic Random Access Memory
9%
Sensing Performance
9%
Sensing Properties
9%
Power Consumption
9%
Memory Device
9%
Amorphous InGaZnO (a-IGZO)
9%
Gate Dielectric
9%
Nanowires
9%
Weyl Semimetal
8%
Silicon Substrate
8%
Fluorinated Graphene
8%
Polyoxides
8%
Hysteresis
8%
High Sensitivity
8%
Real Space
8%
Ferroelectric Field-effect Transistor (FeFET)
8%
Power Amplifier
8%
High Efficiency
8%
Thermoelectric Properties
8%
Nanocrystal Memory
8%
Spintronic Devices
8%
Photodetection
8%
Aluminum Oxide
8%
HfO2 Films
7%
Threshold Voltage
7%
Perovskite Solar Cells (PeSCs)
7%
Band Application
7%
Carbon Nanotube Field Effect Transistor (CNTFET)
7%
Single-pole Double-throw (SPDT) Switch
7%
Positive Bias Temperature Instability
7%
Capacitors
7%
Graphene-based Materials
7%
Topological Insulator
7%
Doping Concentration
7%
Power Efficiency
7%
Double Gate
7%
Heterostructure
7%
X-ray Photoelectron Spectroscopy
7%
Engineering
Field-Effect Transistor
58%
Graphene
55%
Field Effect Transistor
37%
Sensing Membrane
36%
Metal-Oxide-Semiconductor Field-Effect Transistor
31%
Resistive
30%
Millimeter Wave
26%
Rapid Thermal Annealing
25%
Plasma Treatment
25%
Potentiometric
22%
Thin Films
20%
Antenna
19%
Nanowire
16%
Device Performance
16%
Experimental Result
15%
Ion Sensitive Field Effect Transistor
15%
Silicon Dioxide
14%
Dielectrics
13%
Two Dimensional
13%
Oscillator
12%
Semiconductor Structure
12%
Band Gap
12%
Capacitive
12%
Tunnel Construction
12%
Power Amplifier
11%
Data Retention
11%
Passivation
11%
Green's Functions
11%
Dynamic Random Access Memory
11%
Nonvolatile Memory
10%
Electric Power Utilization
10%
Nonequilibrium
10%
Engineering
10%
Nitride
10%
Polysilicon
10%
Low-Temperature
10%
Molybdenum Disulfide
10%
Output Power
9%
Single Pole
9%
Front End
9%
Sensing Performance
9%
Monolayers
9%
Heterojunctions
9%
Magnetoelectronics
8%
Nanoscale
8%
Semiconductor Device
8%
Si Substrate
8%
Solar Cell
8%
Oxide Semiconductor
8%
Analog-to-Digital Converter
8%
Annealing Temperature
8%
Temperature Dependence
8%
Oxide Layer
8%
Biosensor
8%
Energy Harvesting
8%
Sensing Property
8%
Building Block
7%
Chemical Vapor Deposition
7%
Perovskite Solar Cells
7%
Band Structure
7%
Interfacial Layer
7%
Sensing System
7%
Real Space
7%
Electric Field
7%
Gate Dielectric
7%
Ray Photoelectron Spectroscopy
7%
Application of Sensors
7%
Indium-Tin-Oxide
7%
Gallium Arsenide
7%
Antenna Arrays
7%
Ka-Band
7%
Microelectromechanical System
7%
Photodetection
6%
Magnetic Tunnel Junction
6%
Bioinstrumentation
6%
Photocurrent
6%
Gate Induced Drain Leakage
6%
Radio Frequency
6%
Resistive Random Access Memory
6%
Ion Implantation
6%
Polarized Antenna
6%
Readout Circuit
6%
Power Added Efficiency
6%
Tunnel
6%
Transceiver
6%
Nanoparticle
6%
One Step
6%
Dynamic Range
6%
Low Power Consumption
6%
Light-Emitting Diode
6%
Artificial Intelligence
6%
Power Density
6%
Simulation Result
5%
Atomic Layer Deposition
5%
Quantum Well
5%
Realization
5%
Input Voltage
5%
Power Conversion Efficiency
5%
Flash Memory
5%
Biosensing
5%