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照明與能源光電研究所
國立陽明交通大學
光電學院
電話
06-3032121
網站
https://cop.nycu.edu.tw/tw/department.html?ID=2
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網路
人員
(7)
計畫
(80)
研究成果
(800)
指紋
查看啟用 照明與能源光電研究所 的研究主題。這些主題標籤來自此機構會員的作品。共同形成了獨特的指紋。
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重量
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Keyphrases
AlGaN-GaN
9%
Aluminum Gallium Nitride (AlGaN)
14%
Annealing
17%
Area-efficient
9%
Buffer Amplifier
15%
Cell-based
20%
Class-AB
7%
CMOS Technology
12%
Cogging Torque
7%
Color Conversion Layer
7%
Color Temperature
8%
Column Driver
17%
Composite Thin Film
10%
Contact Layer
10%
Crystal Quality
8%
Cu Nanocomposite
7%
Device Efficiency
13%
Device Performance
7%
Device-independent
13%
Digital-to-analog Converter
11%
Display Applications
7%
Driver IC
7%
Driving Capability
8%
Electrical Properties
8%
Electroluminescence
10%
Electron Transport Layer
8%
External Quantum Efficiency
9%
Field-effect Transistors
6%
Forward Voltage
6%
GaAs Quantum Well
7%
GaAs Substrate
7%
Gallium Arsenide
15%
GaN Buffer
11%
GaN Layers
8%
GaN-based
16%
GaN-based Light-emitting Diodes
21%
Glass Substrate
8%
High Efficiency
26%
High Performance
7%
High Temperature
10%
High-speed Low-power
6%
Hole Transport Layer
10%
Host Material
7%
Indium Gallium Nitride (InGaN)
33%
Indium Tin Oxide
13%
InGaAs
9%
Ionic Transition Metal Complexes
6%
Light Extraction
6%
Light Output
6%
Light-emitting Diodes
58%
Light-emitting Electrochemical Cells
74%
Low Power
11%
Low Temperature
14%
Low-voltage Operation
6%
Magnetic Coupling
7%
Metal-organic Chemical Vapor Deposition (MOCVD)
22%
Microstructure
7%
Multiple Quantum Wells
20%
Nanorods
16%
Nanowires
8%
Nitrides
30%
Optic Disc
7%
Optical Properties
9%
Organic Light-emitting Diodes
6%
Oxides
14%
P-GaN
12%
Passivating Contacts
7%
Perovskite Solar Cells (PeSCs)
9%
Photodetector
7%
Photonic Crystal
6%
Poly-Si
7%
Polythiophene
7%
Power Output
19%
Power Rail
7%
Quantum Dot Lasers
6%
Quantum Dot Light-emitting Diodes
12%
Quantum Dots
13%
Room Temperature
12%
Sapphire Substrate
9%
Screen-printed
12%
Settling Time
6%
Short-period Superlattice
8%
Si Substrate
6%
Si(111)
7%
Sidewall
7%
Solar Cell
7%
Solid State
15%
Solid State Light
10%
Solution Process
14%
Spindle Motor
16%
Surface Morphology
7%
Taiwan
6%
TFT-LCD
14%
Thin-film Transistors
9%
Transistor
13%
Tunnel Oxide Passivated Contact (TOPCon)
7%
Vertical-cavity Surface-emitting Laser (VCSEL)
32%
White Light
29%
Zinc Oxide Nanorods
7%
ZnO Nanorods
7%
Material Science
Aluminum Nitride
6%
Amorphous Alloys
6%
Annealing
15%
Buffer Layer
12%
Chemical Vapor Deposition
12%
Composite Material
12%
Coordination Compound
7%
Density
25%
Device Efficiency
10%
Dielectric Material
12%
Electrical Resistivity
9%
Electrochemical Cell
55%
Electroluminescence
19%
Electron Mobility
9%
Electron Transfer
9%
Electronic Circuit
17%
Epitaxial Film
7%
Field Effect Transistor
6%
Film
74%
Gallium Arsenide
15%
Heterojunction
5%
Indium
6%
Indium Gallium Arsenide
6%
Indium Tin Oxide
21%
Iridium
7%
Light-Emitting Diode
100%
Liquid Crystal
13%
Lithography
7%
Magnetic Property
6%
Metal-Organic Chemical Vapor Deposition
10%
Nanocomposite
16%
Nanoparticle
16%
Nanorod
27%
Nanostructure
11%
Nanowire
19%
Nitride Compound
28%
Nucleation
5%
Optical Property
7%
Organic Light-Emitting Diode System
5%
Oxide Compound
24%
Perovskite Nanocrystal
5%
Perovskite Solar Cell
17%
Phase Composition
8%
Photoluminescence
9%
Photonic Crystal
6%
Polyelectrolyte
5%
Polythiophene
8%
Quantum Dot
22%
Quantum Well
14%
Refractive Index
6%
Sapphire
13%
Schottky Barrier
7%
Silicon
10%
Solar Cell
5%
Superlattice
14%
Surface (Surface Science)
48%
Surface Morphology
6%
Thermal Stability
5%
Thin Films
39%
Thin-Film Transistor
13%
Titanium Dioxide
6%
Transistor
18%
Vapor Phase Epitaxy
5%
X-Ray Diffraction
6%
Zinc Oxide
22%
ZnO
30%
Engineering
Actuator
5%
Amplifier
5%
Band Gap
6%
Blue Light
6%
Buffer Amplifier
17%
Buffer Layer
7%
Capacitive
7%
Carbon Nanotube
5%
Cavity Surface
26%
Chemical Vapor Deposition
13%
Color Temperature
7%
Crystal Quality
5%
Current Injection
5%
Current Threshold
5%
Device Performance
5%
Device Structure
5%
Digital-to-Analog Converter
11%
Dynamic Performance
5%
Electric Power Utilization
10%
Emissive Layer
5%
Emitting Laser
28%
Emitting Light
52%
Epitaxial Film
7%
Experimental Result
13%
External Quantum Efficiency
7%
Field Emission
6%
Finite Element Analysis
6%
Flow Rate
5%
Flow Velocity
5%
Forward Voltage
7%
Gaas Substrate
7%
Gallium Arsenide
17%
Glass Substrate
7%
Growth Temperature
5%
Heterojunctions
5%
High Resolution
5%
Indium Gallium Arsenide
14%
Indium-Tin-Oxide
13%
Infrared Light
5%
Light Emission
5%
Light Extraction
6%
Light-Emitting Diode
78%
Liquid Crystal
9%
Liquid Crystal Display
10%
Low-Temperature
8%
Luminaires
17%
Magnetic Couplings
7%
Metal Organic Chemical Vapor Deposition
10%
Nanocomposite
8%
Nanomaterial
5%
Nanoparticle
11%
Nanorod
15%
Nanowire
6%
Nitride
26%
Optical Disk
11%
Oscillator
5%
Output Power
18%
Oxide Layer
5%
Passivation
6%
Perovskite Solar Cells
7%
Phase Composition
9%
Photometer
11%
Photonics
7%
Plasmonics
6%
Polysilicon
9%
Power Rail
8%
Power Supply
5%
Quantum Dot
28%
Quantum Well
17%
Rapid Thermal Annealing
5%
Ray Diffraction
5%
Reactive Sputtering
5%
Room Temperature
10%
Rotors
7%
Sapphire Substrate
7%
Schottky Barrier
5%
Settling Time
9%
Si Substrate
7%
Side Wall
7%
Solar Cell
16%
Superlattice
14%
Surface Morphology
6%
Thin Films
23%
Thin-Film Transistor
6%
Transients
11%
Tunnel
6%
Two Dimensional
6%
Ultraviolet Light
6%
Vapor Deposition
13%