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照明與能源光電研究所
國立陽明交通大學
光電學院
電話
06-3032121
網站
https://cop.nycu.edu.tw/tw/department.html?ID=2
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人員
(7)
計畫
(80)
研究成果
(799)
指紋
查看啟用 照明與能源光電研究所 的研究主題。這些主題標籤來自此機構會員的作品。共同形成了獨特的指紋。
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Keyphrases
Light-emitting Electrochemical Cells
74%
Light-emitting Diodes
58%
Indium Gallium Nitride (InGaN)
33%
Vertical-cavity Surface-emitting Laser (VCSEL)
32%
Nitrides
30%
White Light
29%
High Efficiency
26%
Metal-organic Chemical Vapor Deposition (MOCVD)
22%
GaN-based Light-emitting Diodes
21%
Multiple Quantum Wells
20%
Cell-based
20%
Power Output
19%
Column Driver
17%
Annealing
17%
GaN-based
16%
Nanorods
16%
Spindle Motor
16%
Buffer Amplifier
15%
Solid State
15%
Gallium Arsenide
15%
TFT-LCD
14%
Low Temperature
14%
Aluminum Gallium Nitride (AlGaN)
14%
Oxides
14%
Solution Process
14%
Quantum Dots
13%
Transistor
13%
Device-independent
13%
Indium Tin Oxide
13%
Device Efficiency
13%
CMOS Technology
12%
Room Temperature
12%
P-GaN
12%
Screen-printed
12%
Quantum Dot Light-emitting Diodes
12%
Digital-to-analog Converter
11%
GaN Buffer
11%
Low Power
11%
Hole Transport Layer
10%
Composite Thin Film
10%
Solid State Light
10%
High Temperature
10%
Electroluminescence
10%
Contact Layer
10%
Perovskite Solar Cells (PeSCs)
9%
Optical Properties
9%
InGaAs
9%
AlGaN-GaN
9%
External Quantum Efficiency
9%
Area-efficient
9%
Sapphire Substrate
9%
Thin-film Transistors
9%
Short-period Superlattice
8%
Crystal Quality
8%
Driving Capability
8%
Color Temperature
8%
Glass Substrate
8%
Electrical Properties
8%
GaN Layers
8%
Electron Transport Layer
8%
Optic Disc
7%
Sidewall
7%
Poly-Si
7%
Surface Morphology
7%
Passivating Contacts
7%
Zinc Oxide Nanorods
7%
Polythiophene
7%
Nanowires
7%
High Performance
7%
Cu Nanocomposite
7%
Tunnel Oxide Passivated Contact (TOPCon)
7%
Class-AB
7%
Driver IC
7%
Cogging Torque
7%
Color Conversion Layer
7%
GaAs Substrate
7%
Display Applications
7%
Si(111)
7%
Host Material
7%
Photodetector
7%
Solar Cell
7%
Magnetic Coupling
7%
Power Rail
7%
Device Performance
7%
GaAs Quantum Well
7%
Microstructure
7%
ZnO Nanorods
7%
Forward Voltage
6%
Low-voltage Operation
6%
Organic Light-emitting Diodes
6%
Light Output
6%
Taiwan
6%
Light Extraction
6%
Photonic Crystal
6%
Field-effect Transistors
6%
Si Substrate
6%
Settling Time
6%
Quantum Dot Lasers
6%
High-speed Low-power
6%
Ionic Transition Metal Complexes
6%
Material Science
Light-Emitting Diode
100%
Film
74%
Electrochemical Cell
55%
Surface (Surface Science)
48%
Thin Films
39%
ZnO
30%
Nitride Compound
28%
Nanorod
27%
Density
25%
Oxide Compound
24%
Zinc Oxide
22%
Quantum Dot
22%
Indium Tin Oxide
21%
Electroluminescence
19%
Nanowire
18%
Transistor
18%
Perovskite Solar Cell
17%
Electronic Circuit
17%
Nanoparticle
16%
Nanocomposite
16%
Annealing
15%
Gallium Arsenide
15%
Superlattice
14%
Quantum Well
14%
Thin-Film Transistor
13%
Sapphire
13%
Liquid Crystal
13%
Composite Material
12%
Buffer Layer
12%
Chemical Vapor Deposition
12%
Dielectric Material
12%
Nanostructure
11%
Metal-Organic Chemical Vapor Deposition
10%
Silicon
10%
Device Efficiency
10%
Electron Mobility
9%
Electrical Resistivity
9%
Electron Transfer
9%
Photoluminescence
9%
Phase Composition
8%
Polythiophene
8%
Lithography
7%
Schottky Barrier
7%
Coordination Compound
7%
Optical Property
7%
Iridium
7%
Epitaxial Film
7%
Field Effect Transistor
6%
Aluminum Nitride
6%
Photonic Crystal
6%
Titanium Dioxide
6%
Magnetic Property
6%
Amorphous Alloys
6%
Refractive Index
6%
Indium
6%
Surface Morphology
6%
Indium Gallium Arsenide
6%
X-Ray Diffraction
6%
Thermal Stability
5%
Nucleation
5%
Solar Cell
5%
Heterojunction
5%
Vapor Phase Epitaxy
5%
Perovskite Nanocrystal
5%
Organic Light-Emitting Diode System
5%
Polyelectrolyte
5%
Engineering
Light-Emitting Diode
78%
Emitting Light
52%
Quantum Dot
28%
Emitting Laser
28%
Nitride
26%
Cavity Surface
26%
Thin Films
23%
Output Power
18%
Buffer Amplifier
17%
Quantum Well
17%
Gallium Arsenide
17%
Luminaires
17%
Solar Cell
16%
Nanorod
15%
Indium Gallium Arsenide
14%
Superlattice
14%
Experimental Result
13%
Chemical Vapor Deposition
13%
Indium-Tin-Oxide
13%
Vapor Deposition
13%
Photometer
11%
Nanoparticle
11%
Optical Disk
11%
Digital-to-Analog Converter
11%
Transients
11%
Room Temperature
10%
Electric Power Utilization
10%
Metal Organic Chemical Vapor Deposition
10%
Liquid Crystal Display
10%
Polysilicon
9%
Settling Time
9%
Liquid Crystal
9%
Phase Composition
9%
Nanocomposite
8%
Power Rail
8%
Low-Temperature
8%
Rotors
7%
Color Temperature
7%
Sapphire Substrate
7%
Buffer Layer
7%
Epitaxial Film
7%
Gaas Substrate
7%
Forward Voltage
7%
Magnetic Couplings
7%
Photonics
7%
Perovskite Solar Cells
7%
Glass Substrate
7%
Side Wall
7%
Si Substrate
7%
Capacitive
7%
External Quantum Efficiency
7%
Surface Morphology
6%
Two Dimensional
6%
Field Emission
6%
Finite Element Analysis
6%
Tunnel
6%
Band Gap
6%
Thin-Film Transistor
6%
Ultraviolet Light
6%
Nanowire
6%
Blue Light
6%
Light Extraction
6%
Passivation
6%
Dynamic Performance
5%
Device Structure
5%
Nanomaterial
5%
Plasmonics
5%
Oxide Layer
5%
Flow Rate
5%
Flow Velocity
5%
Oscillator
5%
Ray Diffraction
5%
Actuator
5%
Rapid Thermal Annealing
5%
Heterojunctions
5%
Amplifier
5%
Power Supply
5%
Light Emission
5%
Current Injection
5%
Carbon Nanotube
5%
Emissive Layer
5%
Infrared Light
5%
Growth Temperature
5%
Reactive Sputtering
5%
Crystal Quality
5%
Device Performance
5%
High Resolution
5%
Current Threshold
5%
Schottky Barrier
5%