電子研究所

2025

Corrigendum to “Performance enhancement of MOCVD grown Zn-doped β-Ga₂O₃ deep-ultraviolet photodetectors on silicon substrates via TiN buffer layers” [J. Appl. Surf. Sci. 681 (2025) 161509] (Applied Surface Science (2025) 681, (S0169433224022244), (10.1016/j.apsusc.2024.161509))

Singh, A. K., Shen, J. H., Huang, S., Yen, C. C., Chou, H. Y., Chiang, W. H., Yadlapalli, B. K., Huang, C. Y., Liu, P. L., Horng, R. H. & Wuu, D. S., 15 3月 2025, 於: Applied Surface Science. 685, 162077.

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2024

Correction to: A hBN/Ga2O3 pn junction diode (Scientific Reports, (2024), 14, 1, (23484), 10.1038/s41598-024-73931-6)

Marye, S. A., Tsai, X. Y., Kumar, R. R., Tarntair, F. G., Horng, R. H. & Tumilty, N., 12月 2024, 於: Scientific reports. 14, 1, 30454.

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2023

Correction: The amazing world of self-organized Ge quantum dots for Si photonics on SiN platforms (Applied Physics A, (2023), 129, 2, (126), 10.1007/s00339-022-06332-z)

Hong, P. Y., Lin, C. H., Wang, I. H., Chiu, Y. J., Lee, B. J., Kao, J. C., Huang, C. H., Lin, H. C., George, T. & Li, P. W., 2月 2023, 於: Applied Physics A: Materials Science and Processing. 129, 2, 156.

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Correction to: Special issue on “artificial intelligence in cloud computing” (Computing, (2023), 105, 3, (507-511), 10.1007/s00607-021-00985-z)

Mohammed, S., Fang, W. C. & Ramos, C., 3月 2023, 於: Computing. 105, 3, p. 513 1 p.

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Erratum: Low-Temperature Microwave Annealing Processes for Future IC Fabrication - A Review (IEEE Trans. Electron Devices (2014) 61:3 (651–665) DOI: 10.1109/TED.2014.2300898)

Lee, Y. J., Cho, T. C., Chuang, S. S., Hsueh, F. K., Lu, Y. L., Sung, P. J., Chen, H. C., Current, M. I., Tseng, T.-Y., Chao, T. S., Hu, C. & Yang, F. L., 1 7月 2023, 於: IEEE Transactions on Electron Devices. 70, 7, p. 3983 1 p.

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2022

Correction to: HoloTube: a low-cost portable 360-degree interactive autostereoscopic display (Multimedia Tools and Applications, (2017), 76, 7, (9099-9132), 10.1007/s11042-016-3502-3)

Hsu, C. H., Wu, Y. L., Cheng, W. H., Chen, Y. J. & Hua, K. L., 2月 2022, 於: Multimedia Tools and Applications. 81, 5, p. 7521 1 p.

研究成果: Comment/debate

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Expression of concern: Surface-dependent band structure variations and bond deviations of GaN

Tan, C. S. & Huang, M. H., 11 11月 2022, 於: Physical Chemistry Chemical Physics. 24, 45, p. 28081 1 p.

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2020

Correction to: Multimedia modeling (Multimedia modeling, (2020), LNCS 11962, 10.1007/978-3-030-37734-2)

Ro, Y. M., Cheng, W. H., Kim, J., Chu, W. T., Cui, P., Choi, J. W., Hu, M. C. & Neve, W. D., 2020, 於: Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics). 11962 LNCS, p. C1

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2016

Erratum: Optically initialized robust valley-polarized holes in monolayer WSe₂ (Nature Communications (2015) 6 (8963) DOI: 10.1038/ncomms9963)

Hsu, W. T., Chen, Y. L., Chen, C. H., Liu, P. S., Hou, T.-H., Li, L. J. & Chang, W.-H., 1 2月 2016, 於: Nature Communications. 7, p. 1 1 p., 10396.

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2015

Erratum: Fabricating a n⁺-Ge contact with ultralow specific contact resistivity by introducing a PtGe alloy as a contact metal(Applied Physics Letters (2015) 107(113503))

Hsu, C. C., Chou, C. H., Wang, S. Y., Chi, W. C., Chien, C. H. & Luo, G. L., 7 12月 2015, 於: Applied Physics Letters. 107, 23, 239901.

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2014

Erratum: A novel integrated structure of thin film GaN LED with ultra-low thermal resistance (Optics Express (2014) 22 (A606))

Wen, S. Y., Hu, H. L., Tsai, Y. J., Hsu, C. P., Lin, R. C. & Horng, R.-H., 1 1月 2014, 於: Optics Express. 22, SUPPL. 3

研究成果: Comment/debate

Erratum: Low complexity formant estimation adaptive feedback cancellation for hearing aids using pitch based processing (IEEE/ACM Transactions on Speech and Language Processing (2014) 22: 8 (1248-1259))

Chiang, Y. F., Wei, C. W., Meng, Y. L., Lin, Y. W., Jou, S.-J. & Chang, T.-S., 1 12月 2014, 於: IEEE/ACM Transactions on Audio Speech and Language Processing. 22, 12, p. 2256 1 p.

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