電子研究所

Keyphrases

1. High Performance 80%
2. Light-emitting Diodes 70%
3. Transistor 55%
4. CMOS Technology 54%
5. MOSFET 53%
6. Resistive Random Access Memory (ReRAM) 51%
7. CMOS Process 50%
8. Low Power 46%
9. Indium Gallium Nitride (InGaN) 43%
10. Annealing 42%
11. HfO2 41%
12. Silica 40%
13. Metal-organic Chemical Vapor Deposition (MOCVD) 40%
14. Germanium Quantum Dots 40%
15. Low Temperature 38%
16. Gallium Arsenide 38%
17. On chip 37%
18. Electrostatic Discharge (ESD) Protection 35%
19. Power Consumption 35%
20. Thin-film Transistors 35%
21. Ultrathin 33%
22. Proposed Design 32%
23. Electrostatic Discharge 31%
24. Epilayer 31%
25. Fin Field-effect Transistor (FinFET) 31%
26. Oxides 31%
27. Room Temperature 29%
28. Wafer 28%
29. SiGe 27%
30. Sapphire Substrate 27%
31. Electrical Characteristics 27%
32. Power Output 25%
33. Ga2O3 25%
34. Sapphire 25%
35. Electrical Properties 24%
36. Gate Dielectric 24%
37. Amorphous InGaZnO (a-IGZO) 24%
38. GaN-based Light-emitting Diodes 24%
39. NMOSFET 23%
40. On-state Current 22%
41. Threshold Voltage 22%
42. Gate Stack 22%
43. AlGaInP 21%
44. P-type 21%
45. Non-volatile Memory 21%
46. Resistive Switching 21%
47. Si Substrate 21%
48. System-on-chip 21%
49. 4H-SiC 21%
50. Convolutional Neural Network 21%
51. Latch-up 20%
52. InGaAs 20%
53. Poly-Si 20%
54. Leakage Current 20%
55. Memory Device 20%
56. Germanium 20%
57. Polysilicon 20%
58. Device Performance 20%
59. High Efficiency 19%
60. Indium Tin Oxide 19%
61. Silicon Nitride 19%
62. H.264 Encoder 19%
63. Hardware Efficiency 19%
64. P-channel 19%
65. Low Voltage 19%
66. Quantum Dots 18%
67. Neural Network 18%
68. Deep Neural Network 18%
69. Energy Efficient 18%
70. Fully Integrated 18%
71. Area-efficient 18%
72. Performance Improvement 18%
73. Interfacial Layer 18%
74. High Power 18%
75. GaN-based LED 18%
76. Gate Oxide 17%
77. Subthreshold Swing 17%
78. Polycrystalline Silicon Thin-film Transistors (poly-Si TFTs) 17%
79. Semiconductors 17%
80. ZnGa2O4 16%
81. Dielectric 16%
82. 3D IC 16%
83. PMOSFET 16%
84. Decoder 16%
85. Solar Cell 16%
86. Oxygen Vacancy 16%
87. Single Photon Avalanche Diode 16%
88. Capacitors 16%
89. Ferroelectric Field-effect Transistor (FeFET) 15%
90. Nitrides 15%
91. Self-aligned 15%
92. Diode 15%
93. Field-effect Transistors 15%
94. Zirconium Dioxide 15%
95. Systems-based 15%
96. Hybrid Bonding 15%
97. Aluminum Oxide 15%
98. Energy Efficiency 15%
99. High Density 14%
100. Memristor 14%

Engineering

1. Light-Emitting Diode 100%
2. Metal-Oxide-Semiconductor Field-Effect Transistor 96%
3. Experimental Result 89%
4. Thin Films 72%
5. Low-Temperature 55%
6. Resistive 55%
7. Thin-Film Transistor 51%
8. Electrostatic Discharge 50%
9. Polysilicon 49%
10. Electric Power Utilization 49%
11. Dielectrics 49%
12. Gallium Arsenide 47%
13. Silicon Dioxide 45%
14. Quantum Dot 43%
15. Simulation Result 43%
16. Chemical Vapor Deposition 39%
17. Gate Oxide 35%
18. Output Power 35%
19. Vapor Deposition 33%
20. Field Effect Transistor 31%
21. Field-Effect Transistor 31%
22. Nitride 30%
23. Solar Cell 29%
24. Tunnel Construction 29%
25. Deep Learning Method 29%
26. Gate Dielectric 28%
27. Sapphire Substrate 28%
28. Engineering 28%
29. Passivation 27%
30. Room Temperature 27%
31. Convolutional Neural Network 25%
32. System-on-Chip 24%
33. Nodes 23%
34. Nanowire 23%
35. Resistive Random Access Memory 22%
36. Quantum Well 22%
37. Indium Gallium Arsenide 22%
38. Nanoscale 21%
39. Nonvolatile Memory 21%
40. Heterojunctions 21%
41. Band Gap 21%
42. Metal Gate 20%
43. Interconnects 20%
44. Emitting Laser 20%
45. Optoelectronics 19%
46. Front End 19%
47. Gate Stack 19%
48. Energy Efficiency 19%
49. Field Programmable Gate Arrays 19%
50. Device Performance 19%
51. Channel Length 18%
52. Integrated Circuit 18%
53. Amplifier 18%
54. Energy Harvesting 18%
55. Phase Locked Loop 18%
56. Conductive 18%
57. Oxide Thickness 18%
58. Photovoltaics 18%
59. Si Substrate 18%
60. Realization 17%
61. Photometer 17%
62. Two Dimensional 17%
63. Current Injection 17%
64. Output Voltage 17%
65. Photonics 17%
66. Power Supply 17%
67. Transients 16%
68. Interfacial Layer 16%
69. Internet-Of-Things 15%
70. Interlayer 15%
71. Conversion Efficiency 15%
72. Artificial Intelligence 15%
73. Indium-Tin-Oxide 15%
74. Current Ratio 15%
75. Inverter 15%
76. Breakdown Voltage 15%
77. Transceiver 15%
78. Wafer Bonding 14%
79. Light Extraction 14%
80. Supply Voltage 14%
81. Flash Memory 14%
82. Side Wall 14%
83. Molybdenum Disulfide 14%
84. Millimeter Wave 14%
85. Schottky Barrier 14%
86. Process Variation 14%
87. Passivation Layer 14%
88. Learning System 14%
89. Energy Conservation 14%
90. Antenna 14%
91. Computational Complexity 13%
92. Equalizers 13%
93. Oxygen Vacancy 13%
94. Random Access Memory 13%
95. External Quantum Efficiency 13%
96. Power Conversion Efficiency 13%
97. Plasma Treatment 13%
98. Bipolar Transistor 12%
99. High Resolution 12%
100. Analog Circuit 12%