產學創新研究學院

Keyphrases

1. Graphene 58%
2. Non-volatile Memory 54%
3. Sensing Membrane 54%
4. Resistive Random Access Memory (ReRAM) 52%
5. HfO2 51%
6. Graphene Nanoribbon 51%
7. Transistor 50%
8. Field-effect Transistors 47%
9. PH-sensitive 47%
10. Internet of Things 46%
11. Device Performance 45%
12. Electrolyte-insulator-semiconductor 44%
13. Authentication Scheme 43%
14. Rapid Thermal Annealing 43%
15. MOSFET 41%
16. PH Sensing 39%
17. Gd2O3 39%
18. Light-addressable Potentiometric Sensor 36%
19. Silica 35%
20. Low Power 35%
21. Annealing 31%
22. Silicon Nitride 26%
23. EGFET 26%
24. Plasma Treatment 26%
25. Nonvolatile RAM (NVRAM) 26%
26. Semiconductor Structures 25%
27. Taiwan 25%
28. Computational Study 25%
29. Two Dimensional 25%
30. Room Temperature 25%
31. CF4 Plasma Treatment 24%
32. Memory Application 24%
33. Energy Efficient 24%
34. Ultra-thin Body 23%
35. Shared Task 23%
36. Polysilicon 23%
37. GaN HEMT 23%
38. ISFET 23%
39. PH Sensor 23%
40. CF4 Plasma 22%
41. Resistive Switching 22%
42. Shingled Magnetic Recording 21%
43. Data Retention 21%
44. Nanocrystals 21%
45. Hafnium Oxide 21%
46. Gadolinium Oxide 21%
47. High Performance 20%
48. Fluorinated 20%
49. Oxides 19%
50. Germanium-tin 19%
51. NLP. 19%
52. PH Detection 19%
53. Si Substrate 19%
54. RFID System 19%
55. Charge Trapping 19%
56. Authentication Protocol 18%
57. Silicon Nanowires (SiNWs) 18%
58. Temperature Effect 18%
59. Bilayer Graphene 18%
60. Band Gap 18%
61. Storage Characteristics 18%
62. III-V 18%
63. Power Consumption 18%
64. RFID Authentication 17%
65. On-state Current 17%
66. Performance Evaluation 17%
67. RFID Tags 17%
68. Molybdenite 17%
69. Dynamic Random Access Memory 17%
70. High Efficiency 17%
71. Low Temperature 16%
72. Memory Device 16%
73. Ultrathin 16%
74. Nonequilibrium Green's Function 16%
75. Oxide Layer 16%
76. Handset 16%
77. F1 Score 16%
78. Hydrogen Ion 16%
79. Tunnel Field-effect Transistor 15%
80. Indium Tin Oxide 15%
81. End-to-end Speech Recognition 15%
82. Banded Structure 15%
83. Sensing Performance 15%
84. Sensing Properties 15%
85. Mandarin 15%
86. High Density 15%
87. Amorphous InGaZnO (a-IGZO) 15%
88. Gate Dielectric 15%
89. Nanowires 15%
90. Main Memory 15%
91. Weyl Semimetal 15%
92. Silicon Substrate 14%
93. Fluorinated Graphene 14%
94. Polyoxides 14%
95. Hysteresis 14%
96. High Sensitivity 14%
97. Speech Recognition 14%
98. Taiwanese 14%
99. Deep Learning 14%
100. Real Space 14%

Engineering

1. Field-Effect Transistor 100%
2. Graphene 94%
3. Field Effect Transistor 63%
4. Sensing Membrane 61%
5. Experimental Result 55%
6. Metal-Oxide-Semiconductor Field-Effect Transistor 52%
7. Resistive 50%
8. Millimeter Wave 44%
9. Rapid Thermal Annealing 43%
10. Plasma Treatment 42%
11. Potentiometric 37%
12. Thin Films 34%
13. Antenna 32%
14. Nanowire 28%
15. Device Performance 27%
16. Ion Sensitive Field Effect Transistor 26%
17. Silicon Dioxide 24%
18. Dielectrics 22%
19. Two Dimensional 22%
20. Oscillator 21%
21. Semiconductor Structure 21%
22. Band Gap 20%
23. Nonvolatile Memory 20%
24. Tunnel Construction 20%
25. Capacitive 20%
26. Deep Learning Method 20%
27. Data Retention 20%
28. Power Amplifier 20%
29. Dynamic Random Access Memory 19%
30. Passivation 19%
31. Green's Functions 19%
32. Flash Memory 19%
33. Electric Power Utilization 19%
34. Low-Temperature 18%
35. Nonequilibrium 18%
36. Artificial Intelligence 18%
37. Engineering 18%
38. Nitride 17%
39. Polysilicon 17%
40. Molybdenum Disulfide 17%
41. Magnetoelectronics 17%
42. Output Power 16%
43. Front End 16%
44. Single Pole 16%
45. Oxide Semiconductor 15%
46. Sensing Performance 15%
47. Monolayers 15%
48. Semiconductor Device 15%
49. Heterojunctions 15%
50. Nanoscale 15%
51. Si Substrate 14%
52. Solar Cell 14%
53. Error Rate 14%
54. Analog-to-Digital Converter 14%
55. Annealing Temperature 14%
56. Temperature Dependence 14%
57. Oxide Layer 14%
58. Biosensor 13%
59. Energy Harvesting 13%
60. Magnetic Tunnel Junction 13%
61. Sensing Property 13%
62. Building Block 13%
63. Chemical Vapor Deposition 13%
64. Free Field 13%
65. Perovskite Solar Cells 13%
66. Band Structure 13%
67. Interfacial Layer 12%
68. Sensing System 12%
69. Real Space 12%
70. Electric Field 12%
71. Gate Dielectric 12%
72. Ray Photoelectron Spectroscopy 12%
73. Application of Sensors 12%
74. Indium-Tin-Oxide 12%
75. Gallium Arsenide 12%
76. Antenna Arrays 12%
77. Ka-Band 12%
78. Microelectromechanical System 12%
79. Photodetection 11%
80. Simulation Result 11%
81. Random Access Memory 11%
82. Bioinstrumentation 11%
83. Photocurrent 11%
84. Gate Induced Drain Leakage 11%
85. Tunnel 11%
86. Radio Frequency 11%
87. Resistive Random Access Memory 10%
88. Ion Implantation 10%
89. Polarized Antenna 10%
90. Readout Circuit 10%
91. Low Power Consumption 10%
92. Power Added Efficiency 10%
93. Transceiver 10%
94. Nanoparticle 10%
95. One Step 10%
96. Dynamic Range 10%
97. Energy Conservation 10%
98. Light-Emitting Diode 10%
99. Power Density 10%
100. Atomic Layer Deposition 9%