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國立陽明交通大學研發優勢分析平台 首頁
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產學創新研究學院
國立陽明交通大學
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03-5131363
網站
https://iais.nycu.edu.tw/index.html
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人員
(13)
計畫
(8)
研究成果
(1142)
指紋
查看啟用 產學創新研究學院 的研究主題。這些主題標籤來自此機構會員的作品。共同形成了獨特的指紋。
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重量
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Keyphrases
Graphene
54%
Transistor
51%
Sensing Membrane
50%
Non-volatile Memory
49%
Field-effect Transistors
49%
Resistive Random Access Memory (ReRAM)
48%
HfO2
48%
Graphene Nanoribbon
47%
PH-sensitive
44%
Device Performance
44%
Internet of Things
43%
Electrolyte-insulator-semiconductor
41%
Authentication Scheme
41%
Rapid Thermal Annealing
39%
MOSFET
39%
PH Sensing
37%
Gd2O3
36%
Silica
35%
Light-addressable Potentiometric Sensor
34%
Low Power
33%
Annealing
30%
GaN HEMT
28%
Silicon Nitride
25%
EGFET
25%
Plasma Treatment
24%
Taiwan
24%
Two Dimensional
24%
Semiconductor Structures
24%
Computational Study
23%
Room Temperature
23%
CF4 Plasma Treatment
23%
Memory Application
23%
Energy Efficient
23%
Shared Task
23%
Nonvolatile RAM (NVRAM)
22%
Ultra-thin Body
22%
Polysilicon
21%
ISFET
21%
PH Sensor
21%
CF4 Plasma
21%
Resistive Switching
20%
Temperature Effect
20%
Data Retention
20%
Nanocrystals
20%
Hafnium Oxide
20%
Gadolinium Oxide
20%
High Performance
20%
Fluorinated
19%
Oxides
18%
Band Gap
18%
Shingled Magnetic Recording
18%
Germanium-tin
18%
NLP.
18%
PH Detection
18%
Si Substrate
18%
RFID System
18%
Charge Trapping
17%
Authentication Protocol
17%
Silicon Nanowires (SiNWs)
17%
Power Consumption
17%
Bilayer Graphene
17%
AlGaN-GaN
17%
High Efficiency
17%
Storage Characteristics
17%
Molybdenite
17%
III-V
17%
RFID Authentication
16%
On-state Current
16%
Performance Evaluation
16%
Dynamic Random Access Memory
16%
RFID Tags
16%
Band Application
16%
Millimeter Wave
15%
Deep Learning
15%
Memory Device
15%
Amorphous InGaZnO (a-IGZO)
15%
F1 Score
15%
Nonequilibrium Green's Function
15%
Ka-band
15%
Oxide Layer
15%
Handset
15%
Ferroelectric Field-effect Transistor (FeFET)
15%
Hydrogen Ion
15%
High Density
14%
Tunnel Field-effect Transistor
14%
Blockchain
14%
Indium Tin Oxide
14%
Low Temperature
14%
End-to-end Speech Recognition
14%
Power Amplifier
14%
Banded Structure
14%
Sensing Performance
14%
Sensing Properties
14%
Mandarin
14%
Back-end-of-line
14%
Gate Dielectric
14%
Nanowires
14%
Weyl Semimetal
14%
Capacitors
14%
Silicon Substrate
14%
Engineering
Field-Effect Transistor
100%
Graphene
88%
Field Effect Transistor
64%
Experimental Result
59%
Sensing Membrane
58%
Millimeter Wave
50%
Metal-Oxide-Semiconductor Field-Effect Transistor
49%
Resistive
47%
Plasma Treatment
39%
Rapid Thermal Annealing
37%
Potentiometric
35%
Antenna
35%
Thin Films
32%
Device Performance
28%
Silicon Dioxide
27%
Nanowire
26%
Ion Sensitive Field Effect Transistor
24%
Band Gap
23%
Power Amplifier
23%
Dielectrics
22%
Flash Memory
22%
Deep Learning Method
21%
Two Dimensional
21%
Single Pole
21%
Oscillator
20%
Semiconductor Structure
20%
Nitride
19%
Ka-Band
19%
Nonvolatile Memory
19%
Engineering
19%
Output Power
19%
Tunnel Construction
19%
Electric Power Utilization
19%
Capacitive
19%
Dynamic Random Access Memory
19%
Data Retention
19%
Passivation
18%
Artificial Intelligence
18%
Green's Functions
18%
Oxide Semiconductor
17%
Nonequilibrium
17%
Polysilicon
16%
Molybdenum Disulfide
16%
Magnetoelectronics
16%
Front End
15%
Analog-to-Digital Converter
15%
Energy Harvesting
15%
Sensing Performance
15%
Monolayers
14%
Semiconductor Device
14%
Free Field
14%
Heterojunctions
14%
Nanoscale
14%
Temperature Dependence
13%
Si Substrate
13%
Solar Cell
13%
Error Rate
13%
Polarized Antenna
13%
Power Added Efficiency
13%
Low-Temperature
13%
Performance Degradation
13%
Oxide Layer
13%
Biosensor
13%
Building Block
13%
Photodetection
13%
Magnetic Tunnel Junction
12%
Sensing Property
12%
Electric Field
12%
Chemical Vapor Deposition
12%
Perovskite Solar Cells
12%
V-Band
12%
Band Structure
12%
Ray Photoelectron Spectroscopy
12%
Sensing System
12%
Transceiver
12%
Metrics
12%
Power Density
11%
Real Space
11%
Nanoparticle
11%
Gate Dielectric
11%
Random Access Memory
11%
Application of Sensors
11%
Indium-Tin-Oxide
11%
Gallium Arsenide
11%
Antenna Arrays
11%
Microelectromechanical System
11%
Cutoff Frequency
11%
Simulation Result
10%
Bioinstrumentation
10%
Photocurrent
10%
Gate Induced Drain Leakage
10%
Alternating Current
10%
Radio Frequency
10%
Resistive Random Access Memory
10%
Ion Implantation
10%
Nodes
10%
Energy Efficiency
10%
Readout Circuit
10%
Realization
10%
Low Power Consumption
9%