電子物理學系

Keyphrases

1. Annealing 24%
2. ATLAS Detector 100%
3. ATLAS Experiment 12%
4. Collision Data 14%
5. Confidence Level 13%
6. Continuous Wave 11%
7. Diode-end-pumped 11%
8. Diode-pumped 37%
9. Dual-wavelength 11%
10. Electric Field (E-field) 11%
11. Electrical Characteristics 11%
12. Electrical Properties 16%
13. Electronic Structure 16%
14. Energy Center 16%
15. Epilayer 15%
16. Epitaxial 12%
17. Exciton 16%
18. Gallium Arsenide 36%
19. Gate Dielectric 13%
20. Graphene 12%
21. Heterostructure 16%
22. High Efficiency 11%
23. High Energy 15%
24. High Performance 19%
25. High Power 25%
26. High Temperature 14%
27. In Situ 17%
28. Indium Gallium Nitride (InGaN) 16%
29. InGaAs 12%
30. Integrated Luminosity 26%
31. Intra-cavity 14%
32. Kondo 11%
33. Large Hadron Collider 17%
34. Leptons 20%
35. Light-emitting Diodes 11%
36. Low Temperature 38%
37. Magnetic Field 28%
38. Magnetic Properties 12%
39. Magnetization 12%
40. Metal-organic Chemical Vapor Deposition (MOCVD) 18%
41. Missing Transverse Momentum 18%
42. Mode-locking 14%
43. Molecular Beam Epitaxy 26%
44. Molybdenite 11%
45. MOSFET 12%
46. Muon 15%
47. Nanowires 15%
48. Observatory 11%
49. Optical Properties 26%
50. Oxides 23%
51. Passive Q-switching 23%
52. Phase Transition 11%
53. Photoluminescence 28%
54. Photopolymer 14%
55. Poly(methyl methacrylate) 11%
56. Poly-Si 18%
57. Polycrystalline Silicon Thin-film Transistors (poly-Si TFTs) 13%
58. Polysilicon 11%
59. Power Output 15%
60. Pp Collisions 61%
61. Production Cross Section 17%
62. Proton-proton Collisions 32%
63. Pulse Repetition Frequency 13%
64. Pulse Width 10%
65. Pulsed Laser Deposition 15%
66. Pulsed Power 11%
67. Pumping Power 28%
68. Q-switched Nd 15%
69. Q-switching 14%
70. Quantum Critical Point 11%
71. Quantum Dots 44%
72. Quantum Well 21%
73. Repetition Rate 14%
74. Resistivity 11%
75. Room Temperature 28%
76. Saturable Absorber 13%
77. Self-assembled Quantum Dots 12%
78. Self-mode-locking 18%
79. Si(111) 12%
80. Silica 12%
81. Single Crystal 22%
82. Structural Properties 14%
83. Superconductivity 15%
84. Superconductor 21%
85. Temperature Effect 31%
86. Transport Properties 11%
87. Transverse Momentum 14%
88. Two Dimensional 22%
89. Type-II Superconductors 14%
90. Ultrafast 21%
91. Ultrafast Dynamics 11%
92. Ultrafast Pump-probe Spectroscopy 11%
93. Ultrathin 16%
94. Vertical-cavity Surface-emitting Laser (VCSEL) 14%
95. Vortex 11%
96. W Boson 11%
97. Wave Function 14%
98. X-ray Absorption Spectroscopy 12%
99. YVO4 37%
100. Zinc Selenide 17%

Engineering

1. Activation Energy 7%
2. Anisotropic 8%
3. Atomic Force Microscopy 6%
4. Average Power 7%
5. Band Edge 5%
6. Blueshift 5%
7. Bragg Cell 14%
8. Cavity Surface 10%
9. Chemical Vapor Deposition 15%
10. Continuous Wave 9%
11. Conversion Efficiency 13%
12. Cross Section 16%
13. Current-Voltage Characteristic 5%
14. Deep Level 9%
15. Defects 19%
16. Deposited Film 6%
17. Diamond 6%
18. Dielectrics 11%
19. Electric Field 14%
20. Emitting Laser 14%
21. Energy Engineering 50%
22. Energy Gap 6%
23. Engineering 7%
24. Experimental Result 28%
25. Femtosecond Laser 6%
26. Field Effect Transistor 12%
27. Field-Effect Transistor 11%
28. Final State 6%
29. Gain Medium 7%
30. Gallium Arsenide 36%
31. Gate Dielectric 7%
32. Gate Oxide 10%
33. Gaussians 13%
34. Good Agreement 8%
35. Graphene 10%
36. Ground State 6%
37. Growth Temperature 8%
38. Harmonic Generation 6%
39. Harmonics 6%
40. Heterojunctions 10%
41. Heterostructures 8%
42. Holograms 7%
43. Indium Gallium Arsenide 13%
44. Interfacial Layer 5%
45. Lepton 6%
46. Light-Emitting Diode 16%
47. Liquid Crystal 8%
48. Low-Temperature 32%
49. Magnetic Field 19%
50. Metal-Oxide-Semiconductor Field-Effect Transistor 18%
51. Microstructure 7%
52. Molybdenum Disulfide 8%
53. Monolayer 10%
54. Nanoparticle 5%
55. Nanorod 5%
56. Nanoscale 8%
57. Nanowires 14%
58. Nitride 8%
59. Optical Fiber Coupling 7%
60. Optical Phonon 6%
61. Optoelectronics 9%
62. Output Power 27%
63. Passivation 6%
64. Peak Power 15%
65. Polysilicon 13%
66. Pulse Duration 15%
67. Pulse Energy 10%
68. Pulse Repetition Rate 9%
69. Pulsed Laser 12%
70. Pump Power 27%
71. Quantum Dot 46%
72. Quantum Well 36%
73. Rapid Thermal Annealing 5%
74. Ray Absorption 8%
75. Ray Diffraction 14%
76. Repetition Rate 15%
77. Resonator 10%
78. Response Time 6%
79. Room Temperature 22%
80. Sapphire Substrate 10%
81. Saturable Absorber 12%
82. Scanning Tunneling Microscopy 6%
83. Shallower 10%
84. Si Substrate 7%
85. Solar Cell 10%
86. Spectral Range 6%
87. State Laser 7%
88. Superconductor 16%
89. Superlattice 5%
90. Temperature Dependence 9%
91. Terahertz 8%
92. Thin Films 51%
93. Thin-Film Transistor 17%
94. Transients 12%
95. Transmissions 19%
96. Tunnel Construction 16%
97. Two Dimensional 21%
98. Valence Band 7%
99. Vapor Deposition 14%
100. Vortex 19%