電子物理學系

Keyphrases

1. ATLAS Detector 100%
2. Pp Collisions 61%
3. Quantum Dots 44%
4. Low Temperature 38%
5. YVO4 38%
6. Diode-pumped 37%
7. Gallium Arsenide 36%
8. Proton-proton Collisions 32%
9. Temperature Effect 31%
10. Pumping Power 29%
11. Room Temperature 28%
12. Photoluminescence 28%
13. Magnetic Field 28%
14. Molecular Beam Epitaxy 27%
15. Integrated Luminosity 26%
16. Optical Properties 26%
17. High Power 26%
18. Annealing 24%
19. Passive Q-switching 24%
20. Oxides 23%
21. Two Dimensional 22%
22. Single Crystal 22%
23. Ultrafast 22%
24. Quantum Well 22%
25. Superconductor 21%
26. Leptons 20%
27. High Performance 20%
28. Self-mode-locking 18%
29. Metal-organic Chemical Vapor Deposition (MOCVD) 18%
30. Poly-Si 18%
31. Missing Transverse Momentum 18%
32. Indium Gallium Nitride (InGaN) 17%
33. Production Cross Section 17%
34. Zinc Selenide 17%
35. Electronic Structure 17%
36. In Situ 17%
37. Large Hadron Collider 17%
38. Exciton 16%
39. Electrical Properties 16%
40. Ultrathin 16%
41. Energy Center 16%
42. Heterostructure 16%
43. Epilayer 15%
44. Superconductivity 15%
45. Power Output 15%
46. High Energy 15%
47. Q-switched Nd 15%
48. Muon 15%
49. Nanowires 15%
50. Intra-cavity 15%
51. Pulsed Laser Deposition 15%
52. Structural Properties 14%
53. Q-switching 14%
54. Mode-locking 14%
55. Photopolymer 14%
56. Transverse Momentum 14%
57. Repetition Rate 14%
58. Vertical-cavity Surface-emitting Laser (VCSEL) 14%
59. Wave Function 14%
60. Type-II Superconductors 14%
61. High Temperature 14%
62. Collision Data 14%
63. Pulse Repetition Frequency 13%
64. Gate Dielectric 13%
65. Confidence Level 13%
66. Saturable Absorber 13%
67. X-ray Absorption Spectroscopy 13%
68. Polycrystalline Silicon Thin-film Transistors (poly-Si TFTs) 13%
69. Epitaxial 13%
70. Magnetization 12%
71. Si(111) 12%
72. ATLAS Experiment 12%
73. Silica 12%
74. MOSFET 12%
75. InGaAs 12%
76. Magnetic Properties 12%
77. Graphene 12%
78. Continuous Wave 12%
79. Self-assembled Quantum Dots 12%
80. High Efficiency 11%
81. Electrical Characteristics 11%
82. Electric Field (E-field) 11%
83. Polysilicon 11%
84. Dual-wavelength 11%
85. Pulsed Power 11%
86. Ultrafast Dynamics 11%
87. Light-emitting Diodes 11%
88. Diode-end-pumped 11%
89. Vortex 11%
90. Kondo 11%
91. Observatory 11%
92. Poly(methyl methacrylate) 11%
93. Molybdenite 11%
94. Quantum Critical Point 11%
95. W Boson 11%
96. GdVO4 11%
97. Transport Properties 11%
98. Phase Transition 11%
99. Resistivity 11%
100. Ultrafast Pump-probe Spectroscopy 11%

Engineering

1. Thin Films 51%
2. Quantum Dot 46%
3. Gallium Arsenide 36%
4. Quantum Well 36%
5. Low-Temperature 32%
6. Polysilicon 32%
7. Experimental Result 28%
8. Output Power 27%
9. Pump Power 27%
10. Two Dimensional 22%
11. Room Temperature 22%
12. Magnetic Field 19%
13. Vortex 19%
14. Metal-Oxide-Semiconductor Field-Effect Transistor 18%
15. Cross Section 17%
16. Reflectance 17%
17. Superconductor 16%
18. Thin-Film Transistor 16%
19. Tunnel Construction 16%
20. Light-Emitting Diode 16%
21. Electric Field 15%
22. Chemical Vapor Deposition 15%
23. Pulse Duration 15%
24. Peak Power 15%
25. Emitting Laser 15%
26. Bragg Cell 15%
27. Repetition Rate 14%
28. Vapor Deposition 14%
29. Nanowire 14%
30. Gaussians 13%
31. Ray Diffraction 13%
32. Silicon Dioxide 13%
33. Field Effect Transistor 12%
34. Oscillator 12%
35. Saturable Absorber 12%
36. Indium Gallium Arsenide 12%
37. Transients 12%
38. Pulsed Laser 12%
39. Conversion Efficiency 12%
40. Dielectrics 11%
41. Raman Spectra 11%
42. Solar Cell 11%
43. Phase Composition 11%
44. Field-Effect Transistor 11%
45. Graphene 10%
46. Gate Oxide 10%
47. Monolayers 10%
48. Resonator 10%
49. Pulse Energy 10%
50. Cavity Surface 10%
51. Nanomaterial 10%
52. Heterojunctions 10%
53. Sapphire Substrate 10%
54. Temperature Dependence 9%
55. Deep Level 9%
56. Band Gap 9%
57. Optoelectronics 9%
58. Liquid Crystal 9%
59. Continuous Wave 9%
60. Pulse Repetition Rate 9%
61. Nanoscale 8%
62. Anisotropic 8%
63. Superlattice 8%
64. Heterostructures 8%
65. Good Agreement 8%
66. Nitride 8%
67. Terahertz 8%
68. Molybdenum Disulfide 8%
69. Carrier Concentration 7%
70. Electronic State 7%
71. Holograms 7%
72. State Laser 7%
73. Engineering 7%
74. Activation Energy 7%
75. Gain Medium 7%
76. Ray Absorption 7%
77. Energy Levels 7%
78. Si Substrate 7%
79. Gate Dielectric 7%
80. Valence Band 7%
81. Growth Temperature 7%
82. Optical Fiber Coupling 7%
83. Final State 6%
84. Femtosecond Laser 6%
85. Ground State 6%
86. Average Power 6%
87. Diamond 6%
88. Spectral Range 6%
89. Harmonics 6%
90. Atomic Force Microscopy 6%
91. Harmonic Generation 6%
92. Response Time 6%
93. Lepton 6%
94. Blueshift 5%
95. Scanning Tunneling Microscopy 5%
96. Nanorod 5%
97. Optical Phonon 5%
98. Deposited Film 5%
99. Passivation 5%
100. Rapid Thermal Annealing 5%