電子物理學系

Keyphrases

1. ATLAS Detector 100%
2. Pp Collisions 61%
3. Quantum Dots 44%
4. Low Temperature 39%
5. YVO4 38%
6. Diode-pumped 37%
7. Gallium Arsenide 36%
8. Proton-proton Collisions 32%
9. Temperature Effect 31%
10. Pumping Power 29%
11. Molecular Beam Epitaxy 29%
12. Room Temperature 28%
13. Magnetic Field 28%
14. Photoluminescence 28%
15. Optical Properties 27%
16. Integrated Luminosity 26%
17. High Power 26%
18. Annealing 24%
19. Passive Q-switching 24%
20. Oxides 23%
21. Two Dimensional 23%
22. Ultrafast 22%
23. Single Crystal 22%
24. Quantum Well 22%
25. High Performance 21%
26. Superconductor 21%
27. Leptons 20%
28. Electronic Structure 19%
29. Self-mode-locking 18%
30. In Situ 18%
31. Metal-organic Chemical Vapor Deposition (MOCVD) 18%
32. Poly-Si 18%
33. Missing Transverse Momentum 18%
34. Indium Gallium Nitride (InGaN) 17%
35. Production Cross Section 17%
36. Zinc Selenide 17%
37. Large Hadron Collider 17%
38. Pulsed Laser Deposition 17%
39. Ultrathin 16%
40. Exciton 16%
41. Electrical Properties 16%
42. Heterostructure 16%
43. Superconductivity 16%
44. Energy Center 16%
45. Epilayer 15%
46. Structural Properties 15%
47. Power Output 15%
48. High Energy 15%
49. Epitaxial 15%
50. Q-switched Nd 15%
51. Muon 15%
52. Nanowires 15%
53. Intra-cavity 15%
54. Vertical-cavity Surface-emitting Laser (VCSEL) 15%
55. Q-switching 14%
56. X-ray Absorption Spectroscopy 14%
57. Mode-locking 14%
58. Photopolymer 14%
59. Transverse Momentum 14%
60. Repetition Rate 14%
61. Wave Function 14%
62. Type-II Superconductors 14%
63. High Temperature 14%
64. Collision Data 14%
65. Pulse Repetition Frequency 13%
66. Gate Dielectric 13%
67. Confidence Level 13%
68. Silica 13%
69. Saturable Absorber 13%
70. Polycrystalline Silicon Thin-film Transistors (poly-Si TFTs) 13%
71. Magnetic Properties 13%
72. Graphene 12%
73. Magnetization 12%
74. Si(111) 12%
75. ATLAS Experiment 12%
76. MOSFET 12%
77. InGaAs 12%
78. Ultrafast Dynamics 12%
79. Continuous Wave 12%
80. Self-assembled Quantum Dots 12%
81. High Efficiency 12%
82. Electrical Characteristics 11%
83. Electric Field (E-field) 11%
84. Polysilicon 11%
85. Molybdenite 11%
86. Dual-wavelength 11%
87. Pulsed Power 11%
88. Light-emitting Diodes 11%
89. Diode-end-pumped 11%
90. Vortex 11%
91. Kondo 11%
92. Phase Transition 11%
93. Observatory 11%
94. Poly(methyl methacrylate) 11%
95. Quantum Critical Point 11%
96. W Boson 11%
97. Field-effect Transistors 11%
98. Pulse Width 11%
99. GdVO4 11%
100. Transport Properties 11%

Engineering

1. Thin Films 53%
2. Quantum Dot 47%
3. Gallium Arsenide 36%
4. Quantum Well 36%
5. Low-Temperature 32%
6. Polysilicon 32%
7. Pump Power 28%
8. Output Power 28%
9. Experimental Result 28%
10. Two Dimensional 23%
11. Room Temperature 22%
12. Magnetic Field 21%
13. Vortex 19%
14. Metal-Oxide-Semiconductor Field-Effect Transistor 18%
15. Thin-Film Transistor 17%
16. Reflectance 17%
17. Tunnel Construction 17%
18. Cross Section 16%
19. Superconductor 16%
20. Light-Emitting Diode 16%
21. Electric Field 15%
22. Chemical Vapor Deposition 15%
23. Pulse Duration 15%
24. Peak Power 15%
25. Emitting Laser 15%
26. Repetition Rate 14%
27. Bragg Cell 14%
28. Vapor Deposition 14%
29. Nanowire 14%
30. Gaussians 13%
31. Saturable Absorber 13%
32. Ray Diffraction 13%
33. Silicon Dioxide 13%
34. Pulsed Laser 13%
35. Field Effect Transistor 13%
36. Conversion Efficiency 13%
37. Monolayers 13%
38. Oscillator 12%
39. Indium Gallium Arsenide 12%
40. Transients 12%
41. Field-Effect Transistor 12%
42. Raman Spectra 12%
43. Dielectrics 11%
44. Solar Cell 11%
45. Phase Composition 11%
46. Graphene 10%
47. Gate Oxide 10%
48. Resonator 10%
49. Pulse Energy 10%
50. Cavity Surface 10%
51. Nanomaterial 10%
52. Molybdenum Disulfide 10%
53. Heterojunctions 10%
54. Sapphire Substrate 10%
55. Band Gap 10%
56. Temperature Dependence 9%
57. Deep Level 9%
58. Optoelectronics 9%
59. Holograms 9%
60. Heterostructures 9%
61. Liquid Crystal 9%
62. Nitride 9%
63. Anisotropic 9%
64. Continuous Wave 9%
65. Pulse Repetition Rate 9%
66. Nanoscale 9%
67. Terahertz 9%
68. Electronic State 8%
69. Good Agreement 8%
70. Ray Absorption 8%
71. Superlattice 8%
72. Carrier Concentration 8%
73. Harmonics 7%
74. State Laser 7%
75. Engineering 7%
76. Activation Energy 7%
77. Gain Medium 7%
78. Si Substrate 7%
79. Energy Levels 7%
80. Gate Dielectric 7%
81. Valence Band 7%
82. Growth Temperature 7%
83. Optical Fiber Coupling 7%
84. Ground State 7%
85. Final State 6%
86. Femtosecond Laser 6%
87. Harmonic Generation 6%
88. Average Power 6%
89. Diamond 6%
90. Spectral Range 6%
91. Atomic Force Microscopy 6%
92. Response Time 6%
93. Lepton 6%
94. Dopants 6%
95. Blueshift 5%
96. Scanning Tunneling Microscopy 5%
97. Nanorod 5%
98. Annealing Temperature 5%
99. Optical Phonon 5%
100. Deposited Film 5%