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電子物理學系
國立陽明交通大學
理學院
電話
03-571-2121#56102
網站
https://ep.nycu.edu.tw/
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人員
(30)
計畫
(524)
研究成果
(4164)
獎項
(56)
活動
(60)
指紋
查看啟用 電子物理學系 的研究主題。這些主題標籤來自此機構會員的作品。共同形成了獨特的指紋。
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Keyphrases
ATLAS Detector
100%
Pp Collisions
61%
Quantum Dots
44%
Low Temperature
39%
YVO4
38%
Diode-pumped
37%
Gallium Arsenide
36%
Proton-proton Collisions
32%
Temperature Effect
31%
Pumping Power
29%
Molecular Beam Epitaxy
29%
Room Temperature
28%
Magnetic Field
28%
Photoluminescence
28%
Optical Properties
27%
Integrated Luminosity
26%
High Power
26%
Annealing
24%
Passive Q-switching
24%
Oxides
23%
Two Dimensional
23%
Ultrafast
22%
Single Crystal
22%
Quantum Well
22%
High Performance
21%
Superconductor
21%
Leptons
20%
Electronic Structure
19%
Self-mode-locking
18%
In Situ
18%
Metal-organic Chemical Vapor Deposition (MOCVD)
18%
Poly-Si
18%
Missing Transverse Momentum
18%
Indium Gallium Nitride (InGaN)
17%
Production Cross Section
17%
Zinc Selenide
17%
Large Hadron Collider
17%
Pulsed Laser Deposition
17%
Ultrathin
16%
Exciton
16%
Electrical Properties
16%
Heterostructure
16%
Superconductivity
16%
Energy Center
16%
Epilayer
15%
Structural Properties
15%
Power Output
15%
High Energy
15%
Epitaxial
15%
Q-switched Nd
15%
Muon
15%
Nanowires
15%
Intra-cavity
15%
Vertical-cavity Surface-emitting Laser (VCSEL)
15%
Q-switching
14%
X-ray Absorption Spectroscopy
14%
Mode-locking
14%
Photopolymer
14%
Transverse Momentum
14%
Repetition Rate
14%
Wave Function
14%
Type-II Superconductors
14%
High Temperature
14%
Collision Data
14%
Pulse Repetition Frequency
13%
Gate Dielectric
13%
Confidence Level
13%
Silica
13%
Saturable Absorber
13%
Polycrystalline Silicon Thin-film Transistors (poly-Si TFTs)
13%
Magnetic Properties
13%
Graphene
12%
Magnetization
12%
Si(111)
12%
ATLAS Experiment
12%
MOSFET
12%
InGaAs
12%
Ultrafast Dynamics
12%
Continuous Wave
12%
Self-assembled Quantum Dots
12%
High Efficiency
12%
Electrical Characteristics
11%
Electric Field (E-field)
11%
Polysilicon
11%
Molybdenite
11%
Dual-wavelength
11%
Pulsed Power
11%
Light-emitting Diodes
11%
Diode-end-pumped
11%
Vortex
11%
Kondo
11%
Phase Transition
11%
Observatory
11%
Poly(methyl methacrylate)
11%
Quantum Critical Point
11%
W Boson
11%
Field-effect Transistors
11%
Pulse Width
11%
GdVO4
11%
Transport Properties
11%
Engineering
Thin Films
53%
Quantum Dot
47%
Gallium Arsenide
36%
Quantum Well
36%
Low-Temperature
32%
Polysilicon
32%
Pump Power
28%
Output Power
28%
Experimental Result
28%
Two Dimensional
23%
Room Temperature
22%
Magnetic Field
21%
Vortex
19%
Metal-Oxide-Semiconductor Field-Effect Transistor
18%
Thin-Film Transistor
17%
Reflectance
17%
Tunnel Construction
17%
Cross Section
16%
Superconductor
16%
Light-Emitting Diode
16%
Electric Field
15%
Chemical Vapor Deposition
15%
Pulse Duration
15%
Peak Power
15%
Emitting Laser
15%
Repetition Rate
14%
Bragg Cell
14%
Vapor Deposition
14%
Nanowire
14%
Gaussians
13%
Saturable Absorber
13%
Ray Diffraction
13%
Silicon Dioxide
13%
Pulsed Laser
13%
Field Effect Transistor
13%
Conversion Efficiency
13%
Monolayers
13%
Oscillator
12%
Indium Gallium Arsenide
12%
Transients
12%
Field-Effect Transistor
12%
Raman Spectra
12%
Dielectrics
11%
Solar Cell
11%
Phase Composition
11%
Graphene
10%
Gate Oxide
10%
Resonator
10%
Pulse Energy
10%
Cavity Surface
10%
Nanomaterial
10%
Molybdenum Disulfide
10%
Heterojunctions
10%
Sapphire Substrate
10%
Band Gap
10%
Temperature Dependence
9%
Deep Level
9%
Optoelectronics
9%
Holograms
9%
Heterostructures
9%
Liquid Crystal
9%
Nitride
9%
Anisotropic
9%
Continuous Wave
9%
Pulse Repetition Rate
9%
Nanoscale
9%
Terahertz
9%
Electronic State
8%
Good Agreement
8%
Ray Absorption
8%
Superlattice
8%
Carrier Concentration
8%
Harmonics
7%
State Laser
7%
Engineering
7%
Activation Energy
7%
Gain Medium
7%
Si Substrate
7%
Energy Levels
7%
Gate Dielectric
7%
Valence Band
7%
Growth Temperature
7%
Optical Fiber Coupling
7%
Ground State
7%
Final State
6%
Femtosecond Laser
6%
Harmonic Generation
6%
Average Power
6%
Diamond
6%
Spectral Range
6%
Atomic Force Microscopy
6%
Response Time
6%
Lepton
6%
Dopants
6%
Blueshift
5%
Scanning Tunneling Microscopy
5%
Nanorod
5%
Annealing Temperature
5%
Optical Phonon
5%
Deposited Film
5%