電機學院

Engineering

1. Experimental Result 100%
2. Light-Emitting Diode 83%
3. Metal-Oxide-Semiconductor Field-Effect Transistor 82%
4. Simulation Result 74%
5. Thin-Film Transistor 62%
6. Gallium Arsenide 52%
7. Electric Power Utilization 50%
8. Polysilicon 47%
9. Antenna 46%
10. Dielectrics 45%
11. Thin Films 45%
12. Low-Temperature 44%
13. Electrostatic Discharge 37%
14. Quantum Dot 37%
15. Multiple-Input Multiple-Output 35%
16. Amplifier 34%
17. Quantum Well 33%
18. Silicon Dioxide 32%
19. Liquid Crystal 30%
20. Emitting Laser 30%
21. Solar Cell 30%
22. Transients 29%
23. Nanowire 28%
24. Nanoscale 27%
25. Resistive 26%
26. Supply Voltage 26%
27. Output Power 26%
28. Heterojunctions 25%
29. Nitride 24%
30. Joints (Structural Components) 24%
31. Photonics 24%
32. Field-Effect Transistor 23%
33. Communication System 23%
34. Millimeter Wave 23%
35. Bipolar Transistor 23%
36. Resonator 23%
37. Cavity Surface 22%
38. Gate Oxide 22%
39. Nodes 22%
40. Room Temperature 21%
41. Orthogonal Frequency Division Multiplexing 21%
42. Transceiver 21%
43. Two Dimensional 21%
44. Robotics 20%
45. Chemical Vapor Deposition 20%
46. Inverter 19%
47. Data Rate 18%
48. Control Scheme 18%
49. Tunnel Construction 18%
50. Mixers (Machinery) 18%
51. Filtration 18%
52. Integrated Circuit 18%
53. Interconnects 18%
54. Oscillator 18%
55. Front End 18%
56. Vapor Deposition 18%
57. Radio Frequency 18%
58. Waveguide 18%
59. Field Effect Transistor 18%
60. Dopants 17%
61. Wireless Communication 17%
62. System-on-Chip 17%
63. Gate Dielectric 17%
64. Indium Gallium Arsenide 17%
65. Backlight 17%
66. Dynamic Range 16%
67. Power Supply 16%
68. High Resolution 16%
69. Low Noise Amplifier 16%
70. Electric Field 16%
71. Control System 16%
72. Output Voltage 15%
73. Computational Complexity 15%
74. Deep Learning Method 15%
75. Power Amplifier 15%
76. Flash Memory 15%
77. Multiuser 15%
78. Microelectromechanical System 15%
79. Band Gap 15%
80. Harmonics 15%
81. Time Domain 15%
82. Beamforming 15%
83. Energy Conservation 15%
84. Signal-to-Noise Ratio 14%
85. Metal Gate 14%
86. Liquid Crystal Display 14%
87. Sapphire Substrate 14%
88. Channel Estimation 14%
89. Circuit Design 14%
90. Reflectance 14%
91. Bit Error Rate 14%
92. Directional 14%
93. Gaussians 14%
94. Si Substrate 14%
95. Nanomaterial 13%
96. Engineering 13%
97. Energy Dissipation 13%
98. Electric Lines 13%
99. Noise Figure 13%
100. Realization 13%

Keyphrases

1. High Performance 62%
2. Light-emitting Diodes 53%
3. CMOS Process 50%
4. MOSFET 49%
5. CMOS Technology 44%
6. Gallium Arsenide 43%
7. Low Power 42%
8. Thin-film Transistors 42%
9. High Efficiency 40%
10. Indium Gallium Nitride (InGaN) 39%
11. Power Consumption 37%
12. Silica 35%
13. Vertical-cavity Surface-emitting Laser (VCSEL) 30%
14. Transistor 30%
15. Low Temperature 29%
16. On chip 28%
17. Electrical Characteristics 28%
18. Annealing 28%
19. Room Temperature 27%
20. Electrostatic Discharge (ESD) Protection 26%
21. Polycrystalline Silicon Thin-film Transistors (poly-Si TFTs) 25%
22. Electrostatic Discharge 25%
23. Oxides 24%
24. Neural Network 24%
25. HfO2 23%
26. Quantum Dots 22%
27. Power Output 22%
28. Controller 22%
29. Amorphous InGaZnO (a-IGZO) 22%
30. GaN-based 22%
31. Threshold Voltage 21%
32. Antenna 21%
33. Electrical Properties 21%
34. Gate Dielectric 21%
35. Resistive Random Access Memory (ReRAM) 21%
36. NMOSFET 20%
37. Dielectric 19%
38. Low Voltage 19%
39. Wireless 19%
40. 65nm CMOS 19%
41. Metal-organic Chemical Vapor Deposition (MOCVD) 19%
42. GaN-based Light-emitting Diodes 19%
43. Supply Voltage 19%
44. Transmitter 18%
45. Proposed Design 18%
46. Leakage Current 18%
47. Si Substrate 18%
48. Ultrathin 18%
49. Three-dimensional (3D) 17%
50. Capacitors 17%
51. Visible Light Communication 17%
52. Two Dimensional 17%
53. Decoder 16%
54. Photonic Crystal 16%
55. Non-volatile Memory 16%
56. Multiple Quantum Wells 16%
57. Polysilicon 16%
58. High Density 15%
59. Optical Properties 15%
60. Temperature Effect 15%
61. Solar Cell 15%
62. Millimeter Wave 15%
63. Heterojunction Bipolar Transistors 15%
64. Wideband 15%
65. Systems-based 15%
66. Resistive Switching 15%
67. On-state Current 15%
68. InGaAs 14%
69. Orthogonal Frequency Division multiplexing 14%
70. Reconfigurable 14%
71. Aluminum Oxide 14%
72. Fuzzy Neural Network 14%
73. SiGe 14%
74. Gbps 14%
75. Fin Field-effect Transistor (FinFET) 14%
76. PMOSFET 14%
77. Control Scheme 14%
78. Indium Tin Oxide 14%
79. Computational Complexity 13%
80. Micro-light-emitting Diodes (micro-LEDs) 13%
81. Field-effect Transistors 13%
82. Performance Improvement 13%
83. Poly-Si 13%
84. Neutral Beam 13%
85. Nitrides 13%
86. Energy Efficient 13%
87. Device Performance 13%
88. Oxide Thin-film Transistors 13%
89. Memory Device 13%
90. Low Noise Amplifier 13%
91. Wafer 13%
92. 90-nm CMOS Technology 12%
93. P-type 12%
94. Measurement Results 12%
95. Subthreshold Swing 12%
96. High Power 12%
97. Encoder 12%
98. Power Conversion Efficiency 12%
99. Gate-all-around 12%
100. Output Voltage 12%