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國立陽明交通大學研發優勢分析平台 首頁
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電機學院
國立陽明交通大學
電話
03-5714864
網站
https://ece.nycu.edu.tw/
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網路
人員
(160)
計畫
(4208)
研究成果
(28658)
獎項
(600)
活動
(174)
影響
(6)
指紋
查看啟用 電機學院 的研究主題。這些主題標籤來自此機構會員的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Engineering
Experimental Result
100%
Light-Emitting Diode
83%
Metal-Oxide-Semiconductor Field-Effect Transistor
81%
Simulation Result
73%
Thin-Film Transistor
59%
Gallium Arsenide
50%
Electric Power Utilization
49%
Antenna
45%
Dielectrics
45%
Polysilicon
45%
Thin Films
44%
Low-Temperature
44%
Quantum Dot
37%
Electrostatic Discharge
37%
Multiple-Input Multiple-Output
36%
Amplifier
33%
Quantum Well
33%
Silicon Dioxide
32%
Emitting Laser
30%
Liquid Crystal
29%
Solar Cell
29%
Transients
27%
Photonics
27%
Communication System
27%
Nanowire
27%
Resistive
27%
Nitride
27%
Heterojunctions
26%
Output Power
26%
Nanoscale
26%
Joints (Structural Components)
26%
Supply Voltage
25%
Millimeter Wave
25%
Field-Effect Transistor
25%
Nodes
23%
Orthogonal Frequency Division Multiplexing
22%
Resonator
22%
Bipolar Transistor
22%
Room Temperature
22%
Transceiver
21%
Integrated Circuit
21%
Gate Oxide
21%
Two Dimensional
21%
Cavity Surface
21%
Chemical Vapor Deposition
19%
Waveguide
19%
Deep Learning Method
19%
Wireless Communication
19%
Inverter
19%
Data Rate
19%
Robotics
19%
Radio Frequency
18%
Tunnel Construction
18%
Field Effect Transistor
18%
Front End
18%
Beamforming
17%
Interconnects
17%
Control Scheme
17%
Mixers (Machinery)
17%
Vapor Deposition
17%
Band Gap
17%
Oscillator
17%
High Resolution
17%
Gate Dielectric
17%
Dynamic Range
17%
Dopants
17%
System-on-Chip
17%
Filtration
17%
Backlight
16%
Power Supply
16%
Multiuser
16%
Electric Field
16%
Indium Gallium Arsenide
16%
Power Amplifier
16%
Low Noise Amplifier
15%
Output Voltage
15%
Computational Complexity
15%
Control System
15%
Flash Memory
15%
Harmonics
15%
Bit Error Rate
15%
Microelectromechanical System
14%
Time Domain
14%
Signal-to-Noise Ratio
14%
Energy Efficiency
14%
Circuit Design
14%
Engineering
14%
Metal Gate
14%
Energy Conservation
14%
Passivation
14%
Channel Estimation
14%
Basestation
13%
Reflectance
13%
Sapphire Substrate
13%
Photometer
13%
Si Substrate
13%
Directional
13%
Liquid Crystal Display
13%
Electric Lines
13%
Field Programmable Gate Arrays
13%
Keyphrases
High Performance
61%
Light-emitting Diodes
51%
MOSFET
48%
CMOS Process
48%
CMOS Technology
42%
Low Power
41%
Gallium Arsenide
41%
Thin-film Transistors
40%
High Efficiency
39%
Indium Gallium Nitride (InGaN)
38%
Power Consumption
36%
Silica
33%
Transistor
30%
Low Temperature
28%
Vertical-cavity Surface-emitting Laser (VCSEL)
28%
On chip
27%
Electrical Characteristics
27%
Annealing
27%
Room Temperature
27%
Electrostatic Discharge
25%
Electrostatic Discharge (ESD) Protection
25%
Neural Network
24%
Polycrystalline Silicon Thin-film Transistors (poly-Si TFTs)
24%
Oxides
23%
HfO2
22%
GaN-based
22%
Threshold Voltage
22%
Quantum Dots
21%
Power Output
21%
Controller
21%
Antenna
21%
Resistive Random Access Memory (ReRAM)
20%
Amorphous InGaZnO (a-IGZO)
20%
Electrical Properties
20%
Gate Dielectric
20%
NMOSFET
19%
Metal-organic Chemical Vapor Deposition (MOCVD)
19%
Leakage Current
19%
Low Voltage
19%
Wireless
18%
Dielectric
18%
Proposed Design
18%
65nm CMOS
18%
Ultrathin
18%
Transmitter
18%
Micro-light-emitting Diodes (micro-LEDs)
18%
Supply Voltage
18%
GaN-based Light-emitting Diodes
17%
Visible Light Communication
17%
Si Substrate
17%
Capacitors
17%
Non-volatile Memory
17%
Three-dimensional (3D)
17%
Two Dimensional
16%
Photonic Crystal
16%
Decoder
16%
Multiple Quantum Wells
15%
Millimeter Wave
15%
Reconfigurable
15%
High Density
15%
Polysilicon
15%
SiGe
15%
Systems-based
15%
Temperature Effect
15%
Wideband
15%
On-state Current
14%
Optical Properties
14%
Solar Cell
14%
Fin Field-effect Transistor (FinFET)
14%
Heterojunction Bipolar Transistors
14%
Orthogonal Frequency Division multiplexing
14%
Aluminum Oxide
14%
Field-effect Transistors
14%
Energy Efficient
14%
Resistive Switching
14%
InGaAs
14%
Gbps
13%
Device Performance
13%
Performance Improvement
13%
Fuzzy Neural Network
13%
Computational Complexity
13%
Indium Tin Oxide
13%
PMOSFET
13%
Wafer
13%
Control Scheme
13%
Nitrides
13%
P-type
12%
Poly-Si
12%
Oxide Thin-film Transistors
12%
Low Noise Amplifier
12%
Neutral Beam
12%
High Power
12%
Subthreshold Swing
12%
Gate-all-around
12%
Power Conversion Efficiency
12%
High-resolution
12%
Memory Device
12%
Measurement Results
12%
Deep Learning
12%
90-nm CMOS Technology
12%