電機學院

Engineering

1. Experimental Result 100%
2. Light-Emitting Diode 84%
3. Metal-Oxide-Semiconductor Field-Effect Transistor 82%
4. Simulation Result 73%
5. Thin-Film Transistor 62%
6. Gallium Arsenide 51%
7. Electric Power Utilization 49%
8. Polysilicon 47%
9. Antenna 46%
10. Dielectrics 46%
11. Thin Films 44%
12. Low-Temperature 44%
13. Quantum Dot 38%
14. Electrostatic Discharge 37%
15. Multiple-Input Multiple-Output 35%
16. Amplifier 33%
17. Quantum Well 32%
18. Silicon Dioxide 32%
19. Emitting Laser 31%
20. Liquid Crystal 30%
21. Solar Cell 30%
22. Transients 28%
23. Nanowire 27%
24. Resistive 27%
25. Nanoscale 26%
26. Output Power 26%
27. Supply Voltage 26%
28. Nitride 26%
29. Joints (Structural Components) 25%
30. Heterojunctions 25%
31. Photonics 25%
32. Communication System 25%
33. Millimeter Wave 25%
34. Field-Effect Transistor 24%
35. Nodes 22%
36. Bipolar Transistor 22%
37. Resonator 22%
38. Gate Oxide 22%
39. Orthogonal Frequency Division Multiplexing 21%
40. Room Temperature 21%
41. Cavity Surface 21%
42. Transceiver 21%
43. Two Dimensional 21%
44. Chemical Vapor Deposition 20%
45. Integrated Circuit 20%
46. Robotics 20%
47. Inverter 19%
48. Deep Learning Method 19%
49. Data Rate 19%
50. Tunnel Construction 19%
51. Wireless Communication 18%
52. Radio Frequency 18%
53. Control Scheme 18%
54. Waveguide 18%
55. Front End 18%
56. Mixers (Machinery) 18%
57. Interconnects 18%
58. Vapor Deposition 17%
59. Oscillator 17%
60. Field Effect Transistor 17%
61. Filtration 17%
62. Dopants 17%
63. Gate Dielectric 17%
64. High Resolution 17%
65. System-on-Chip 17%
66. Backlight 17%
67. Dynamic Range 16%
68. Indium Gallium Arsenide 16%
69. Power Supply 16%
70. Beamforming 16%
71. Electric Field 16%
72. Multiuser 16%
73. Flash Memory 15%
74. Computational Complexity 15%
75. Low Noise Amplifier 15%
76. Control System 15%
77. Output Voltage 15%
78. Power Amplifier 15%
79. Band Gap 15%
80. Harmonics 15%
81. Time Domain 15%
82. Microelectromechanical System 15%
83. Energy Conservation 14%
84. Bit Error Rate 14%
85. Metal Gate 14%
86. Circuit Design 14%
87. Signal-to-Noise Ratio 14%
88. Channel Estimation 14%
89. Sapphire Substrate 14%
90. Liquid Crystal Display 14%
91. Reflectance 14%
92. Basestation 13%
93. Engineering 13%
94. Directional 13%
95. Gaussians 13%
96. Si Substrate 13%
97. Energy Dissipation 13%
98. Nanomaterial 13%
99. Electric Lines 13%
100. Realization 13%

Keyphrases

1. High Performance 61%
2. Light-emitting Diodes 52%
3. MOSFET 49%
4. CMOS Process 49%
5. CMOS Technology 43%
6. Gallium Arsenide 42%
7. Low Power 42%
8. Thin-film Transistors 41%
9. High Efficiency 40%
10. Indium Gallium Nitride (InGaN) 40%
11. Power Consumption 37%
12. Silica 34%
13. Transistor 30%
14. Low Temperature 29%
15. Vertical-cavity Surface-emitting Laser (VCSEL) 29%
16. On chip 28%
17. Annealing 28%
18. Electrical Characteristics 28%
19. Room Temperature 27%
20. Electrostatic Discharge 26%
21. Electrostatic Discharge (ESD) Protection 25%
22. Polycrystalline Silicon Thin-film Transistors (poly-Si TFTs) 25%
23. Neural Network 24%
24. Oxides 23%
25. HfO2 23%
26. Quantum Dots 22%
27. GaN-based 22%
28. Power Output 22%
29. Controller 22%
30. Threshold Voltage 22%
31. Antenna 21%
32. Amorphous InGaZnO (a-IGZO) 21%
33. Resistive Random Access Memory (ReRAM) 21%
34. Electrical Properties 21%
35. Gate Dielectric 20%
36. NMOSFET 20%
37. Low Voltage 19%
38. Wireless 19%
39. Metal-organic Chemical Vapor Deposition (MOCVD) 19%
40. Dielectric 19%
41. Leakage Current 19%
42. 65nm CMOS 18%
43. Proposed Design 18%
44. Supply Voltage 18%
45. Transmitter 18%
46. GaN-based Light-emitting Diodes 18%
47. Si Substrate 17%
48. Ultrathin 17%
49. Non-volatile Memory 17%
50. Visible Light Communication 17%
51. Three-dimensional (3D) 17%
52. Capacitors 17%
53. Micro-light-emitting Diodes (micro-LEDs) 17%
54. Two Dimensional 17%
55. Decoder 16%
56. Photonic Crystal 16%
57. Polysilicon 15%
58. Multiple Quantum Wells 15%
59. Millimeter Wave 15%
60. Systems-based 15%
61. High Density 15%
62. Temperature Effect 15%
63. Optical Properties 15%
64. Solar Cell 15%
65. Wideband 15%
66. Heterojunction Bipolar Transistors 15%
67. On-state Current 14%
68. Fin Field-effect Transistor (FinFET) 14%
69. Resistive Switching 14%
70. Reconfigurable 14%
71. Orthogonal Frequency Division multiplexing 14%
72. InGaAs 14%
73. Aluminum Oxide 14%
74. SiGe 14%
75. Fuzzy Neural Network 14%
76. Performance Improvement 14%
77. Gbps 13%
78. Indium Tin Oxide 13%
79. Energy Efficient 13%
80. Field-effect Transistors 13%
81. Computational Complexity 13%
82. PMOSFET 13%
83. Control Scheme 13%
84. Nitrides 13%
85. Device Performance 13%
86. Wafer 13%
87. Poly-Si 13%
88. Neutral Beam 13%
89. P-type 12%
90. Oxide Thin-film Transistors 12%
91. High Power 12%
92. Memory Device 12%
93. Low Noise Amplifier 12%
94. 90-nm CMOS Technology 12%
95. Measurement Results 12%
96. Subthreshold Swing 12%
97. Power Conversion Efficiency 12%
98. High-resolution 12%
99. Encoder 12%
100. Output Voltage 12%