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智慧半導體奈米系統技術研究中心
國立陽明交通大學
高教深耕計畫辦公室
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(19)
研究成果
(1297)
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(2)
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查看啟用 智慧半導體奈米系統技術研究中心 的研究主題。這些主題標籤來自此機構會員的作品。共同形成了獨特的指紋。
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重量
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Material Science
Ferroelectric Material
100%
Transistor
93%
Density
77%
Field Effect Transistor
69%
Film
66%
Surface (Surface Science)
61%
Electron Mobility
53%
Oxide Compound
51%
Capacitance
49%
Dielectric Material
45%
Electronic Circuit
38%
Heterojunction
33%
Silicon
33%
High Entropy Alloys
31%
Capacitor
29%
Metal-Oxide-Semiconductor Field-Effect Transistor
28%
Annealing
28%
Nanowire
28%
Monolayers
26%
Contact Resistance
21%
Oxidation Reaction
20%
Thin Films
19%
Thermal Stability
17%
Transition Metal Dichalcogenide
17%
Transmission Electron Microscopy
16%
Grain Boundary
15%
ZnO
15%
Aluminum Nitride
14%
Grain Size
14%
Metal Oxide
14%
Two-Dimensional Material
14%
Ultimate Tensile Strength
13%
Nanosheet
13%
Indium
12%
Zirconia
12%
Resistive Random-Access Memory
11%
X-Ray Photoelectron Spectroscopy
11%
Nanoparticle
11%
Ferroelectricity
11%
Scanning Electron Microscopy
11%
Chemical Vapor Deposition
11%
Thermal Cycling
11%
Solder Joint
11%
Electroplating
11%
Charge Trapping
10%
Intermetallics
10%
Anisotropy
10%
Oxide Semiconductor
10%
Sapphire
10%
Nucleation
10%
Indium Gallium Arsenide
10%
Medium-Entropy Alloy
10%
Electrical Property
9%
Electrical Resistivity
9%
Gallium Nitride
9%
Polyimide
9%
Superlattice
9%
Al2O3
9%
Epitaxy
9%
Phase Composition
9%
Thin-Film Transistor
9%
Schottky Barrier
9%
Hafnium
9%
Composite Material
8%
Surface Roughness
8%
Single Crystal
8%
Germanium
8%
Power Device
8%
Molybdenum
8%
Metal-Organic Chemical Vapor Deposition
8%
Titanium Dioxide
8%
High-Resolution Transmission Electron Microscopy
7%
Oxygen Vacancy
7%
Nanorod
7%
Thermal Expansion
7%
Nanostructure
7%
Crystal Defect
7%
Plastic Deformation
7%
Yield Stress
7%
Diffusivity
6%
Permittivity
6%
Light-Emitting Diode
6%
X-Ray Diffraction
6%
Photoluminescence
6%
Surface Modification
6%
Fatigue of Materials
6%
Radiative Cooling
6%
Thermal Stress
6%
Carrier Concentration
6%
Neutron Diffraction
6%
Transition Metal
5%
Magnesium Oxide
5%
Zinc Oxide
5%
Finite Element Method
5%
Buffer Layer
5%
Scanning Tunneling Microscopy
5%
Strength of Materials
5%
Electrodeposition
5%
Electrical Breakdown
5%
Three Dimensional Printing
5%
Keyphrases
GaN HEMT
58%
Low Temperature
42%
Nanotwinned Cu
38%
High Electron Mobility Transistor
36%
Carbon Nanotube Field Effect Transistor (CNTFET)
34%
Ferroelectric Field-effect Transistor (FeFET)
33%
Cu-Cu Bonding
31%
Nanoporous Copper
31%
AlGaN-GaN
29%
Fin Field-effect Transistor (FinFET)
29%
Compact Model
26%
Hybrid Bonding
26%
(111)-oriented
25%
Ultrathin
25%
Bonding Interface
23%
HfO2
23%
Annealing
23%
MOSFET
22%
Gate Stack
21%
High Performance
21%
Threshold Voltage
21%
High-entropy Alloy
20%
Transistor
20%
Interfacial Layer
19%
Enhancement-mode (E-mode)
19%
Electromigration
18%
Mechanical Properties
18%
Metal-insulator-semiconductor
17%
Negative Capacitance
17%
In Situ
17%
Metal-organic Chemical Vapor Deposition (MOCVD)
16%
Cu Film
16%
Electrical Properties
16%
Subthreshold Swing
15%
P-GaN
15%
Molybdenite
15%
GaN-on-Si
14%
Capacitors
14%
GaN MIS-HEMT
14%
Passivation Layer
14%
On-resistance
14%
Silica
14%
Heterostructure
13%
Atomic Scale
13%
Microbump
13%
Electrical Characteristics
13%
Non-volatile Memory
13%
Two Dimensional
13%
Gate Length
13%
Charge Trapping
13%
3D IC
12%
Microstructure
12%
Dielectric
12%
Bonding Strength
12%
Nanotwins
12%
Transconductance
12%
Heterogeneous Integration
12%
Ka-band
11%
Cu-SiO2
11%
Resistive Random Access Memory (ReRAM)
11%
Bonding Process
11%
Room Temperature
11%
Gallium Nitride
11%
InGaAs
11%
Resistive Switching
11%
3D Integration
10%
Memristor
10%
Memory Window
10%
Passivation
10%
On-state Current
10%
Additive Manufacturing
10%
Si Substrate
10%
InAlGaN
10%
Bonding Quality
10%
Device Performance
10%
Nanowires
10%
Hf0.5Zr0.5O2
10%
Field-effect Transistors
10%
Leakage Current
10%
Gate Dielectric
10%
CoCrNi Medium-entropy Alloy
10%
Temperature Effect
10%
Semiconductors
10%
Cu Joint
9%
Oxides
9%
Rutile
9%
Current Density
9%
Cu-Cu Joints
9%
High Strength
9%
Ferroelectric Capacitor
9%
Band Application
9%
Medium-entropy Alloy
9%
Thin-film Transistors
9%
Short Channel
9%
Magnetic Tunnel Junction
9%
Electroplating
9%
Electrical Performance
9%
Spin-orbit Torque
9%
Superlattice
9%
Low Thermal Budget
9%
Engineering
Low-Temperature
50%
Metal-Oxide-Semiconductor Field-Effect Transistor
44%
Dielectrics
38%
Field Effect Transistor
38%
Field-Effect Transistor
35%
Joints (Structural Components)
28%
Gate Stack
27%
Nitride
25%
Silicon Dioxide
23%
Millimeter Wave
22%
Passivation
20%
Direct Bonding
19%
Antenna
18%
Breakdown Voltage
18%
Heterojunctions
18%
Nanowire
17%
Interfacial Layer
17%
Molybdenum Disulfide
17%
Indium Gallium Arsenide
17%
Gate Bias
16%
Passivation Layer
15%
Resistive
15%
Atomic Layer Deposition
15%
Bonding Strength
15%
Gate Length
14%
Two Dimensional
14%
Electromigration
14%
Current Drain
13%
Interconnects
13%
Gate Dielectric
13%
Experimental Result
13%
Channel Length
12%
Interlayer
12%
Monolayers
12%
Power Device
12%
Ka-Band
12%
Thin-Film Transistor
11%
Nonvolatile Memory
11%
High-Entropy Alloys
11%
Cutoff Frequency
11%
Thin Films
11%
Bonding Process
11%
Engineering
11%
Electrical Performance
10%
Oxide Thickness
10%
Core-Shell
10%
Tunnel Construction
10%
Si Substrate
10%
Device Performance
10%
Ray Photoelectron Spectroscopy
10%
Resistive Random Access Memory
10%
Three Dimensional Integrated Circuits
9%
Radio Frequency
9%
Chemical Vapor Deposition
9%
Annealing Temperature
9%
Gate Voltage
9%
Superlattice
9%
Barrier Layer
8%
Electric Field
8%
Transients
8%
Max
8%
Tunnel
8%
Artificial Intelligence
8%
Nodes
8%
Oxide Layer
8%
Power Amplifier
8%
Room Temperature
8%
Metal Oxide Semiconductor
8%
Industry Standard
8%
Metal Organic Chemical Vapor Deposition
8%
Side Wall
8%
Gate Oxide
8%
Atomic Layer
8%
Output Power
8%
Heterostructures
8%
Cu Film
7%
Nanomaterial
7%
Bonding Structure
7%
Single Pole
7%
Deep Learning Method
7%
Silicon on Insulator
7%
Bonding Temperature
7%
Anisotropic
7%
Vapor Deposition
7%
Nanorod
7%
Interface State
7%
Magnetic Tunnel Junction
7%
Plasma Treatment
7%
Buffer Layer
6%
Reliability Analysis
6%
Nanosheet
6%
Nanoparticle
6%
Simulation Result
6%
Band Gap
6%
Bonding Technology
6%
Interposer
6%
Polycrystalline
6%
Annealing Process
6%
Activation Energy
6%
Transition Metal Dichalcogenide
6%