ZrN-Based Flexible Resistive Switching Memory

Keyphrases

• Bending Radius 33%
• Electrical Characteristics 33%
• Endurance Cycling 33%
• Fabrication Methods 33%
• Flexible Memory 33%
• Interface Layer 33%
• Low Temperature 33%
• Memory Application 33%
• Memory Device 33%
• Operational Voltage 33%
• Resistive Random Access Memory (ReRAM) 100%
• Room Temperature Fabrication 33%
• Switching Characteristics 33%
• Voltage Variation 33%

Engineering

• Bending Radius 50%
• Interface Layer 50%
• Low-Temperature 50%
• Random Access Memory Device 50%
• Resistive 100%
• Resistive Random Access Memory 100%
• Room Temperature 50%

Material Science

• Electrical Property 50%
• Resistive Random-Access Memory 100%