ZrN-Based Flexible Resistive Switching Memory

Dayanand Kumar; Umesh Chand; Lew Wen Siang; Tseung-Yuen Tseng

doi:10.1109/LED.2020.2981529

ZrN-Based Flexible Resistive Switching Memory

Dayanand Kumar, Umesh Chand, Lew Wen Siang, Tseung-Yuen Tseng^*

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

In this letter, ZrN-based resistive random access memory (RRAM) is investigated for flexible memory applications for the near future. Due to the room-temperature fabrication process, the device is suitable for low-temperature flexible monolithic technologies. The TiN/ZrN/TiN device exhibits excellent AC endurance cycling (10⁷), a rapid speed (45 ns) and stable retention (10⁴ s) at 100°C without any degradation. In addition, RRAM devices built with an additional HfN interface layer exhibit small operational voltage variations and stable switching characteristics. The flexibility of the device is excellent, and it maintains excellent electrical characteristics at a bending radius of up to 4 mm.

Original language	English
Article number	9039564
Pages (from-to)	705-708
Number of pages	4
Journal	Ieee Electron Device Letters
Volume	41
Issue number	5
DOIs	https://doi.org/10.1109/LED.2020.2981529
State	Published - Mar 2020

Keywords

RRAM
conductive filament
nitrogen ions
resistive switching

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10.1109/LED.2020.2981529

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title = "ZrN-Based Flexible Resistive Switching Memory",

abstract = "In this letter, ZrN-based resistive random access memory (RRAM) is investigated for flexible memory applications for the near future. Due to the room-temperature fabrication process, the device is suitable for low-temperature flexible monolithic technologies. The TiN/ZrN/TiN device exhibits excellent AC endurance cycling (107), a rapid speed (45 ns) and stable retention (104 s) at 100°C without any degradation. In addition, RRAM devices built with an additional HfN interface layer exhibit small operational voltage variations and stable switching characteristics. The flexibility of the device is excellent, and it maintains excellent electrical characteristics at a bending radius of up to 4 mm.",

keywords = "RRAM, conductive filament, nitrogen ions, resistive switching",

author = "Dayanand Kumar and Umesh Chand and Siang, {Lew Wen} and Tseung-Yuen Tseng",

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AU - Siang, Lew Wen

AU - Tseng, Tseung-Yuen

PY - 2020/3

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N2 - In this letter, ZrN-based resistive random access memory (RRAM) is investigated for flexible memory applications for the near future. Due to the room-temperature fabrication process, the device is suitable for low-temperature flexible monolithic technologies. The TiN/ZrN/TiN device exhibits excellent AC endurance cycling (107), a rapid speed (45 ns) and stable retention (104 s) at 100°C without any degradation. In addition, RRAM devices built with an additional HfN interface layer exhibit small operational voltage variations and stable switching characteristics. The flexibility of the device is excellent, and it maintains excellent electrical characteristics at a bending radius of up to 4 mm.

AB - In this letter, ZrN-based resistive random access memory (RRAM) is investigated for flexible memory applications for the near future. Due to the room-temperature fabrication process, the device is suitable for low-temperature flexible monolithic technologies. The TiN/ZrN/TiN device exhibits excellent AC endurance cycling (107), a rapid speed (45 ns) and stable retention (104 s) at 100°C without any degradation. In addition, RRAM devices built with an additional HfN interface layer exhibit small operational voltage variations and stable switching characteristics. The flexibility of the device is excellent, and it maintains excellent electrical characteristics at a bending radius of up to 4 mm.

KW - RRAM

KW - conductive filament

KW - nitrogen ions

KW - resistive switching

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ZrN-Based Flexible Resistive Switching Memory

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Keywords

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