ZnSnOy/ZnSnOx Bilayer Transparent Memristive Synaptic Device for Neuromorphic Computing

Dayanand Kumar, Aftab Saleem, Lai Boon Keong, Amit Singh, Yeong Her Wang, Tseung Yuen Tseng

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


In this letter, we have investigated synaptic features of a transparent bilayer memristor for neuromorphic computing applications. Our device has shown stable synaptic characteristics like potentiation and depression for repetitive 5000 epochs having 400 conductance pulses each. The device has also shown highly linear synaptic features with linearity of 1.2 and -1.4 for potentiation and depression, respectively. Retention property of bilayer transparent synapse showed good stability for 105 s at 90 °C. Multi-Level Cell (MLC) characteristics were achieved by varying reset stop voltages from -0.7V to -1.0V. The proposed bilayer transparent synapse showed good synaptic characteristics and showed high potential to be used in future neuromorphic computing systems.

Original languageEnglish
Pages (from-to)1
Number of pages1
JournalIeee Electron Device Letters
StateAccepted/In press - 2022


  • Depression
  • Indium tin oxide
  • Linearity
  • memristor
  • neuromorphic computing
  • Performance evaluation
  • Switches
  • synapse
  • Synapses
  • Voltage measurement


Dive into the research topics of 'ZnSnOy/ZnSnOx Bilayer Transparent Memristive Synaptic Device for Neuromorphic Computing'. Together they form a unique fingerprint.

Cite this