ZnSnOy/ZnSnOx Bilayer Transparent Memristive Synaptic Device for Neuromorphic Computing

Dayanand Kumar; Aftab Saleem; Lai Boon Keong; Amit Singh; Yeong Her Wang; Tseung Yuen Tseng

doi:10.1109/LED.2022.3186055

ZnSnO_y/ZnSnO_x Bilayer Transparent Memristive Synaptic Device for Neuromorphic Computing

Dayanand Kumar, Aftab Saleem, Lai Boon Keong, Amit Singh, Yeong Her Wang, Tseung Yuen Tseng

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this letter, we have investigated synaptic features of a transparent bilayer memristor for neuromorphic computing applications. Our device has shown stable synaptic characteristics like potentiation and depression for repetitive 5000 epochs having 400 conductance pulses each. The device has also shown highly linear synaptic features with linearity of 1.2 and -1.4 for potentiation and depression, respectively. Retention property of bilayer transparent synapse showed good stability for 10⁵ s at 90 °C. Multi-Level Cell (MLC) characteristics were achieved by varying reset stop voltages from -0.7V to -1.0V. The proposed bilayer transparent synapse showed good synaptic characteristics and showed high potential to be used in future neuromorphic computing systems.

Original language	English
Pages (from-to)	1
Number of pages	1
Journal	Ieee Electron Device Letters
DOIs	https://doi.org/10.1109/LED.2022.3186055
State	Accepted/In press - 2022

Keywords

Depression
Indium tin oxide
Linearity
memristor
neuromorphic computing
Performance evaluation
Switches
synapse
Synapses
Voltage measurement

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10.1109/LED.2022.3186055

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title = "ZnSnOy/ZnSnOx Bilayer Transparent Memristive Synaptic Device for Neuromorphic Computing",

abstract = "In this letter, we have investigated synaptic features of a transparent bilayer memristor for neuromorphic computing applications. Our device has shown stable synaptic characteristics like potentiation and depression for repetitive 5000 epochs having 400 conductance pulses each. The device has also shown highly linear synaptic features with linearity of 1.2 and -1.4 for potentiation and depression, respectively. Retention property of bilayer transparent synapse showed good stability for 105 s at 90 °C. Multi-Level Cell (MLC) characteristics were achieved by varying reset stop voltages from -0.7V to -1.0V. The proposed bilayer transparent synapse showed good synaptic characteristics and showed high potential to be used in future neuromorphic computing systems.",

keywords = "Depression, Indium tin oxide, Linearity, memristor, neuromorphic computing, Performance evaluation, Switches, synapse, Synapses, Voltage measurement",

author = "Dayanand Kumar and Aftab Saleem and Keong, {Lai Boon} and Amit Singh and Wang, {Yeong Her} and Tseng, {Tseung Yuen}",

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year = "2022",

doi = "10.1109/LED.2022.3186055",

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AU - Kumar, Dayanand

AU - Saleem, Aftab

AU - Keong, Lai Boon

AU - Singh, Amit

AU - Wang, Yeong Her

AU - Tseng, Tseung Yuen

N1 - Publisher Copyright: IEEE

PY - 2022

Y1 - 2022

N2 - In this letter, we have investigated synaptic features of a transparent bilayer memristor for neuromorphic computing applications. Our device has shown stable synaptic characteristics like potentiation and depression for repetitive 5000 epochs having 400 conductance pulses each. The device has also shown highly linear synaptic features with linearity of 1.2 and -1.4 for potentiation and depression, respectively. Retention property of bilayer transparent synapse showed good stability for 105 s at 90 °C. Multi-Level Cell (MLC) characteristics were achieved by varying reset stop voltages from -0.7V to -1.0V. The proposed bilayer transparent synapse showed good synaptic characteristics and showed high potential to be used in future neuromorphic computing systems.

AB - In this letter, we have investigated synaptic features of a transparent bilayer memristor for neuromorphic computing applications. Our device has shown stable synaptic characteristics like potentiation and depression for repetitive 5000 epochs having 400 conductance pulses each. The device has also shown highly linear synaptic features with linearity of 1.2 and -1.4 for potentiation and depression, respectively. Retention property of bilayer transparent synapse showed good stability for 105 s at 90 °C. Multi-Level Cell (MLC) characteristics were achieved by varying reset stop voltages from -0.7V to -1.0V. The proposed bilayer transparent synapse showed good synaptic characteristics and showed high potential to be used in future neuromorphic computing systems.

KW - Depression

KW - Indium tin oxide

KW - Linearity

KW - memristor

KW - neuromorphic computing

KW - Performance evaluation

KW - Switches

KW - synapse

KW - Synapses

KW - Voltage measurement

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SP - 1

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

ER -

ZnSnO_y/ZnSnO_x Bilayer Transparent Memristive Synaptic Device for Neuromorphic Computing

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Keywords

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