ZnON contacts enabling high-performance 3-D InGaZnO inverters

Chin I. Kuan; Kang Ping Peng; Horng-Chih Lin; Pei-Wen Li

doi:10.1109/VLSI-TSA.2018.8403819

ZnON contacts enabling high-performance 3-D InGaZnO inverters

Chin I. Kuan^*, Kang Ping Peng, Horng-Chih Lin, Pei-Wen Li

^*Corresponding author for this work

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The inclusion of an ultra-thin zinc oxynitride (ZnON) layer inserted between the channel of InGaZnO (IGZO) and source/drain (S/D) metal of Al for an IGZO thin-film transistor (TFT) is demonstrated to improve device performance in terms of a reduction in S/D series resistance (RSD). The improvement is attributable to the elimination of an interfacial layer of AlOx which is inherently formed at the Al/IGZO interface, by the insertion of ZnON. Characteristics of 3D stacked-type inverters constructed by the IGZO TFTs with ZnON contacts have been also studied. Full-swing switching with voltage gains increases from 9.8V/V for the IGZO inverter without ZnON contacts to 12.3 V/V with ZnON contacts at an operating voltage of 5 V.

Original language	English
Title of host publication	2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-2
Number of pages	2
ISBN (Electronic)	9781538648254
DOIs	https://doi.org/10.1109/VLSI-TSA.2018.8403819
State	Published - 3 Jul 2018
Event	2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 - Hsinchu, Taiwan Duration: 16 Apr 2018 → 19 Apr 2018

Publication series

Name	2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018

Conference

Conference	2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
Country/Territory	Taiwan
City	Hsinchu
Period	16/04/18 → 19/04/18

Access to Document

10.1109/VLSI-TSA.2018.8403819

Cite this

Kuan, C. I., Peng, K. P., Lin, H.-C., & Li, P.-W. (2018). ZnON contacts enabling high-performance 3-D InGaZnO inverters. In 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 (pp. 1-2). (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2018.8403819

Kuan, Chin I. ; Peng, Kang Ping ; Lin, Horng-Chih et al. / ZnON contacts enabling high-performance 3-D InGaZnO inverters. 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1-2 (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018).

@inproceedings{6623926069fc4faea732b722c17fc613,

title = "ZnON contacts enabling high-performance 3-D InGaZnO inverters",

abstract = "The inclusion of an ultra-thin zinc oxynitride (ZnON) layer inserted between the channel of InGaZnO (IGZO) and source/drain (S/D) metal of Al for an IGZO thin-film transistor (TFT) is demonstrated to improve device performance in terms of a reduction in S/D series resistance (RSD). The improvement is attributable to the elimination of an interfacial layer of AlOx which is inherently formed at the Al/IGZO interface, by the insertion of ZnON. Characteristics of 3D stacked-type inverters constructed by the IGZO TFTs with ZnON contacts have been also studied. Full-swing switching with voltage gains increases from 9.8V/V for the IGZO inverter without ZnON contacts to 12.3 V/V with ZnON contacts at an operating voltage of 5 V.",

author = "Kuan, {Chin I.} and Peng, {Kang Ping} and Horng-Chih Lin and Pei-Wen Li",

year = "2018",

month = jul,

day = "3",

doi = "10.1109/VLSI-TSA.2018.8403819",

language = "English",

series = "2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1--2",

booktitle = "2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018",

address = "美國",

note = "2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 ; Conference date: 16-04-2018 Through 19-04-2018",

}

Kuan, CI, Peng, KP, Lin, H-C & Li, P-W 2018, ZnON contacts enabling high-performance 3-D InGaZnO inverters. in 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018, Institute of Electrical and Electronics Engineers Inc., pp. 1-2, 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018, Hsinchu, Taiwan, 16/04/18. https://doi.org/10.1109/VLSI-TSA.2018.8403819

ZnON contacts enabling high-performance 3-D InGaZnO inverters. / Kuan, Chin I.; Peng, Kang Ping; Lin, Horng-Chih et al.
2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-2 (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - ZnON contacts enabling high-performance 3-D InGaZnO inverters

AU - Kuan, Chin I.

AU - Peng, Kang Ping

AU - Lin, Horng-Chih

AU - Li, Pei-Wen

PY - 2018/7/3

Y1 - 2018/7/3

N2 - The inclusion of an ultra-thin zinc oxynitride (ZnON) layer inserted between the channel of InGaZnO (IGZO) and source/drain (S/D) metal of Al for an IGZO thin-film transistor (TFT) is demonstrated to improve device performance in terms of a reduction in S/D series resistance (RSD). The improvement is attributable to the elimination of an interfacial layer of AlOx which is inherently formed at the Al/IGZO interface, by the insertion of ZnON. Characteristics of 3D stacked-type inverters constructed by the IGZO TFTs with ZnON contacts have been also studied. Full-swing switching with voltage gains increases from 9.8V/V for the IGZO inverter without ZnON contacts to 12.3 V/V with ZnON contacts at an operating voltage of 5 V.

AB - The inclusion of an ultra-thin zinc oxynitride (ZnON) layer inserted between the channel of InGaZnO (IGZO) and source/drain (S/D) metal of Al for an IGZO thin-film transistor (TFT) is demonstrated to improve device performance in terms of a reduction in S/D series resistance (RSD). The improvement is attributable to the elimination of an interfacial layer of AlOx which is inherently formed at the Al/IGZO interface, by the insertion of ZnON. Characteristics of 3D stacked-type inverters constructed by the IGZO TFTs with ZnON contacts have been also studied. Full-swing switching with voltage gains increases from 9.8V/V for the IGZO inverter without ZnON contacts to 12.3 V/V with ZnON contacts at an operating voltage of 5 V.

UR - http://www.scopus.com/inward/record.url?scp=85050499565&partnerID=8YFLogxK

U2 - 10.1109/VLSI-TSA.2018.8403819

DO - 10.1109/VLSI-TSA.2018.8403819

M3 - Conference contribution

AN - SCOPUS:85050499565

T3 - 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018

SP - 1

EP - 2

BT - 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018

Y2 - 16 April 2018 through 19 April 2018

ER -

Kuan CI, Peng KP, Lin HC , Li PW. ZnON contacts enabling high-performance 3-D InGaZnO inverters. In 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-2. (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018). doi: 10.1109/VLSI-TSA.2018.8403819

ZnON contacts enabling high-performance 3-D InGaZnO inverters

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this