Zinc oxide nanostructures and high electron mobility nanocomposite thin film transistors

Flora M. Li*, Chien-Wen Hsieh, Sharvari Dalal, Marcus C. Newton, James E. Stott, Pritesh Hiralal, Arokia Nathan, Paul A. Warburton, Husnu E. Unalan, Paul Beecher, Andrew J. Flewitt, Ian Robinson, Gehan Amaratunga, William I. Milne

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

45 Scopus citations


This paper reports on the synthesis of zinc oxide (ZnO) nanostructures and examines the performance of nanocomposite thin-film transistors (TFTs) fabricated using ZnO dispersed in both n- and p-type polymer host matrices. The ZnO nanostructures considered here comprise nanowires and tetrapods and were synthesized using vapor phase deposition techniques involving the carbothermal reduction of solid-phase zinc-containing compounds. Measurement results of nanocomposite TFTs based on dispersion of ZnO nanorods in an n-type organic semiconductor ([6, 6]-phenyl-C61-butyric acid methyl ester) show electron field-effect mobilities in the range 0.3-0.6 cm2V-1 s-1. representing an approximate enhancement by as much as a factor of 40 from the pristine state. The on/off current ratio of the nanocomposite TFTs approach 106 at saturation with off-currents on the order of 10 pA. The results presented here, although preliminary, show a highly promising enhancement for realization of high-performance solution-processable n-type organic TFTs.

Original languageEnglish
Pages (from-to)3001-3011
Number of pages11
JournalIEEE Transactions on Electron Devices
Issue number11
StatePublished - 28 Nov 2008


  • High electron mobility
  • Nanocomposite thin-film transistors (TFTs)
  • Nanowires (NWs)
  • Organic semiconductors
  • Tetrapods
  • Zinc Oxide (ZnO)


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