@inproceedings{81733723643e4039a734845f4c05f402,
title = "WKB Approach for Ferroelectric Tunnel Junctions with Thomas-Fermi Voltage Dependent Screening and Electrostriction Effect",
abstract = "The article proposes a dynamic compact model for a CMOS-compatible ferroelectric tunnel junction (FTJ) with different thicknesses of the Hf0.5Zr0.5O2 tunneling barrier. The model is based on the Wentzel-Kramers-Brillouin (WKB) approach to the point-contact model and incorporates the Thomas-Fermi interfacial screening and electrostriction effect. The tunnel junctions of type: metal-ferroelectric-metal and metal-ferroelectric-semiconductor are simulated to study their device's current density and tunneling electroresistance. The model is extensively verified with experimental data, highlighting the impact of voltage-controlled interfacial screening, and electrostriction effect on the device performance as the uniqueness of this work.",
keywords = "electrostrictioneffect, ferroelectric, mono - domain, screening, tunneling, tunnelingelectro-resistace",
author = "Deepali Jagga and Artur Useinov",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 3rd IEEE Asian Conference on Innovation in Technology, ASIANCON 2023 ; Conference date: 25-08-2023 Through 27-08-2023",
year = "2023",
doi = "10.1109/ASIANCON58793.2023.10270560",
language = "English",
series = "2023 3rd Asian Conference on Innovation in Technology, ASIANCON 2023",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2023 3rd Asian Conference on Innovation in Technology, ASIANCON 2023",
address = "美國",
}