WKB Approach for Ferroelectric Tunnel Junctions with Thomas-Fermi Voltage Dependent Screening and Electrostriction Effect

Deepali Jagga, Artur Useinov

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The article proposes a dynamic compact model for a CMOS-compatible ferroelectric tunnel junction (FTJ) with different thicknesses of the Hf0.5Zr0.5O2 tunneling barrier. The model is based on the Wentzel-Kramers-Brillouin (WKB) approach to the point-contact model and incorporates the Thomas-Fermi interfacial screening and electrostriction effect. The tunnel junctions of type: metal-ferroelectric-metal and metal-ferroelectric-semiconductor are simulated to study their device's current density and tunneling electroresistance. The model is extensively verified with experimental data, highlighting the impact of voltage-controlled interfacial screening, and electrostriction effect on the device performance as the uniqueness of this work.

Original languageEnglish
Title of host publication2023 3rd Asian Conference on Innovation in Technology, ASIANCON 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350302288
DOIs
StatePublished - 2023
Event3rd IEEE Asian Conference on Innovation in Technology, ASIANCON 2023 - Ravet, India
Duration: 25 Aug 202327 Aug 2023

Publication series

Name2023 3rd Asian Conference on Innovation in Technology, ASIANCON 2023

Conference

Conference3rd IEEE Asian Conference on Innovation in Technology, ASIANCON 2023
Country/TerritoryIndia
CityRavet
Period25/08/2327/08/23

Keywords

  • electrostrictioneffect
  • ferroelectric
  • mono - domain
  • screening
  • tunneling
  • tunnelingelectro-resistace

Fingerprint

Dive into the research topics of 'WKB Approach for Ferroelectric Tunnel Junctions with Thomas-Fermi Voltage Dependent Screening and Electrostriction Effect'. Together they form a unique fingerprint.

Cite this