Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric

X. P. Wang; M. F. Li; H. Y. Yu; J. J. Yang; J. D. Chen; C. X. Zhu; A. Y. Du; W. Y. Loh; S. Biesemans; Albert Chin; G. Q. Lo; D. L. Kwong

doi:10.1142/9781848164079_0006

Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric

X. P. Wang, M. F. Li, H. Y. Yu, J. J. Yang, J. D. Chen, C. X. Zhu, A. Y. Du, W. Y. Loh, S. Biesemans, Albert Chin, G. Q. Lo, D. L. Kwong

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

Abstract

For the first time, we demonstrate experimentally that using HfLaO high-k gate dielectric and vertical stacks of TaN/Ru metal layers, dual metal gates with continuously tunable work function over a very wide range from 3.9 to 5.2 eV, can be achieved after 1000°C annealing required by a conventional CMOS source/drain activation process. The wide tunability of work function for this bilayer metal structure is attributed to metal interdiffusion during annealing and the release of Fermi level pinning between metal gates (Ru and TaN) and HfLaO. Moreover, this change is thermally stable and unaffected by a subsequent high temperature process.

Original language	English
Title of host publication	Selected Semiconductor Research
Publisher	Imperial College Press
Pages	383-386
Number of pages	4
ISBN (Electronic)	9781848164079
ISBN (Print)	9781848164062
DOIs	https://doi.org/10.1142/9781848164079_0006
State	Published - 1 Jan 2011

Keywords

CMOS
Fermi level pinning
HfLaO
High-K dielectric
Interdiffusion
Metal gate
Work function

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10.1142/9781848164079_0006

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title = "Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric",

abstract = "For the first time, we demonstrate experimentally that using HfLaO high-k gate dielectric and vertical stacks of TaN/Ru metal layers, dual metal gates with continuously tunable work function over a very wide range from 3.9 to 5.2 eV, can be achieved after 1000°C annealing required by a conventional CMOS source/drain activation process. The wide tunability of work function for this bilayer metal structure is attributed to metal interdiffusion during annealing and the release of Fermi level pinning between metal gates (Ru and TaN) and HfLaO. Moreover, this change is thermally stable and unaffected by a subsequent high temperature process.",

keywords = "CMOS, Fermi level pinning, HfLaO, High-K dielectric, Interdiffusion, Metal gate, Work function",

author = "Wang, {X. P.} and Li, {M. F.} and Yu, {H. Y.} and Yang, {J. J.} and Chen, {J. D.} and Zhu, {C. X.} and Du, {A. Y.} and Loh, {W. Y.} and S. Biesemans and Albert Chin and Lo, {G. Q.} and Kwong, {D. L.}",

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doi = "10.1142/9781848164079_0006",

language = "English",

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T1 - Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric

AU - Wang, X. P.

AU - Li, M. F.

AU - Yu, H. Y.

AU - Yang, J. J.

AU - Chen, J. D.

AU - Zhu, C. X.

AU - Du, A. Y.

AU - Loh, W. Y.

AU - Biesemans, S.

AU - Chin, Albert

AU - Lo, G. Q.

AU - Kwong, D. L.

PY - 2011/1/1

Y1 - 2011/1/1

N2 - For the first time, we demonstrate experimentally that using HfLaO high-k gate dielectric and vertical stacks of TaN/Ru metal layers, dual metal gates with continuously tunable work function over a very wide range from 3.9 to 5.2 eV, can be achieved after 1000°C annealing required by a conventional CMOS source/drain activation process. The wide tunability of work function for this bilayer metal structure is attributed to metal interdiffusion during annealing and the release of Fermi level pinning between metal gates (Ru and TaN) and HfLaO. Moreover, this change is thermally stable and unaffected by a subsequent high temperature process.

AB - For the first time, we demonstrate experimentally that using HfLaO high-k gate dielectric and vertical stacks of TaN/Ru metal layers, dual metal gates with continuously tunable work function over a very wide range from 3.9 to 5.2 eV, can be achieved after 1000°C annealing required by a conventional CMOS source/drain activation process. The wide tunability of work function for this bilayer metal structure is attributed to metal interdiffusion during annealing and the release of Fermi level pinning between metal gates (Ru and TaN) and HfLaO. Moreover, this change is thermally stable and unaffected by a subsequent high temperature process.

KW - CMOS

KW - Fermi level pinning

KW - HfLaO

KW - High-K dielectric

KW - Interdiffusion

KW - Metal gate

KW - Work function

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M3 - Chapter

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SN - 9781848164062

SP - 383

EP - 386

BT - Selected Semiconductor Research

PB - Imperial College Press

ER -

Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric

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Keywords

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