Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric

X. P. Wang, M. F. Li, H. Y. Yu, J. J. Yang, J. D. Chen, C. X. Zhu, A. Y. Du, W. Y. Loh, S. Biesemans, Albert Chin, G. Q. Lo, D. L. Kwong

    Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review


    For the first time, we demonstrate experimentally that using HfLaO high-k gate dielectric and vertical stacks of TaN/Ru metal layers, dual metal gates with continuously tunable work function over a very wide range from 3.9 to 5.2 eV, can be achieved after 1000°C annealing required by a conventional CMOS source/drain activation process. The wide tunability of work function for this bilayer metal structure is attributed to metal interdiffusion during annealing and the release of Fermi level pinning between metal gates (Ru and TaN) and HfLaO. Moreover, this change is thermally stable and unaffected by a subsequent high temperature process.

    Original languageEnglish
    Title of host publicationSelected Semiconductor Research
    PublisherImperial College Press
    Number of pages4
    ISBN (Electronic)9781848164079
    ISBN (Print)9781848164062
    StatePublished - 1 Jan 2011


    • CMOS
    • Fermi level pinning
    • HfLaO
    • High-K dielectric
    • Interdiffusion
    • Metal gate
    • Work function


    Dive into the research topics of 'Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric'. Together they form a unique fingerprint.

    Cite this