Abstract
Wide bandwidth AlAs/Al0.6Ga0.4As tandem Bragg reflectors were grown by organometallic vapor phase epitaxy. Quarter-wave reflector stacks designed for different wavelengths were placed in cascade in epitaxially grown structures to expand the high reflectance bands. Intermediate low-index layers were put in between every two stacks to suppress the transmission peaks in the centers of the combined high reflectance bands. While a single-stack structure showed a full width half-maximum bandwidth of 500 Å, the two-stack and the three-stack structures effectively doubled and tripled this bandwidth to approximately 1000 and 1500 Å, respectively.
Original language | English |
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Pages (from-to) | 3753-3755 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 67 |
DOIs | |
State | Published - 18 Dec 1995 |