Wavelength extension beyond 1.5 μm in symmetric InAs quantum dots grown on InP(111)A using droplet epitaxy

Neul Ha; Takaaki Mano; Yu Nien Wu; Ya Wen Ou; Shun-Jen Cheng; Yoshiki Sakuma; Kazuaki Sakoda; Takashi Kuroda

doi:10.7567/APEX.9.101201

Wavelength extension beyond 1.5 μm in symmetric InAs quantum dots grown on InP(111)A using droplet epitaxy

Neul Ha, Takaaki Mano, Yu Nien Wu, Ya Wen Ou, Shun-Jen Cheng, Yoshiki Sakuma, Kazuaki Sakoda, Takashi Kuroda

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

By using a C_3v symmetric (111) surface as a growth substrate, we can achieve high structural symmetry in self-assembled quantum dots, which are suitable for use as quantum-entangled-photon emitters. Here, we report on the wavelength controllability of InAs dots on InP(111)A, which we realized by tuning the ternary alloy composition of In(Al,Ga)As barriers that were lattice-matched to InP. We changed the peak emission wavelength systematically from 1.3 to 1.7 μm by barrier band gap tuning. The observed spectral shift agreed with the result of numerical simulations that assumed a measured shape distribution independent of the barrier choice.

Original language	English
Article number	101201
Journal	Applied Physics Express
Volume	9
Issue number	10
DOIs	https://doi.org/10.7567/APEX.9.101201
State	Published - 1 Oct 2016

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abstract = "By using a C3v symmetric (111) surface as a growth substrate, we can achieve high structural symmetry in self-assembled quantum dots, which are suitable for use as quantum-entangled-photon emitters. Here, we report on the wavelength controllability of InAs dots on InP(111)A, which we realized by tuning the ternary alloy composition of In(Al,Ga)As barriers that were lattice-matched to InP. We changed the peak emission wavelength systematically from 1.3 to 1.7 μm by barrier band gap tuning. The observed spectral shift agreed with the result of numerical simulations that assumed a measured shape distribution independent of the barrier choice.",

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AU - Wu, Yu Nien

AU - Ou, Ya Wen

AU - Cheng, Shun-Jen

AU - Sakuma, Yoshiki

AU - Sakoda, Kazuaki

AU - Kuroda, Takashi

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N2 - By using a C3v symmetric (111) surface as a growth substrate, we can achieve high structural symmetry in self-assembled quantum dots, which are suitable for use as quantum-entangled-photon emitters. Here, we report on the wavelength controllability of InAs dots on InP(111)A, which we realized by tuning the ternary alloy composition of In(Al,Ga)As barriers that were lattice-matched to InP. We changed the peak emission wavelength systematically from 1.3 to 1.7 μm by barrier band gap tuning. The observed spectral shift agreed with the result of numerical simulations that assumed a measured shape distribution independent of the barrier choice.

AB - By using a C3v symmetric (111) surface as a growth substrate, we can achieve high structural symmetry in self-assembled quantum dots, which are suitable for use as quantum-entangled-photon emitters. Here, we report on the wavelength controllability of InAs dots on InP(111)A, which we realized by tuning the ternary alloy composition of In(Al,Ga)As barriers that were lattice-matched to InP. We changed the peak emission wavelength systematically from 1.3 to 1.7 μm by barrier band gap tuning. The observed spectral shift agreed with the result of numerical simulations that assumed a measured shape distribution independent of the barrier choice.

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Wavelength extension beyond 1.5 μm in symmetric InAs quantum dots grown on InP(111)A using droplet epitaxy

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