Wake-Up of Ultrathin Ferroelectric Hf0.5Zr0.5O2: The Origin and Physical Modeling

Chen Yi Cho; Tzu Yi Chao; Tzu Yao Lin; I. Ting Wang; Yu Sheng Chen; Yi Ching Ong; Yu De Lin; Po Chun Yeh; Shyh Shyuan Sheu; Tuo Hung Hou

doi:10.1109/IEDM45741.2023.10413877

Wake-Up of Ultrathin Ferroelectric Hf_0.5Zr_0.5O₂: The Origin and Physical Modeling

Chen Yi Cho, Tzu Yi Chao, Tzu Yao Lin, I. Ting Wang, Yu Sheng Chen, Yi Ching Ong, Yu De Lin, Po Chun Yeh, Shyh Shyuan Sheu, Tuo Hung Hou^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

The wake-up procedure that demands prolonged time and a high electric field poses a significant obstacle to the aggressive scaling of the ferroelectric (FE) Hf_0.5Zr_0.5O₂ (HZO) thickness. A comprehensive understanding of its origin is thus imperative. A new mechanism, referred to as interfacial-layer soft breakdown (IL-SBD), is proposed to elucidate the wakeup behavior in the ultrathin HZO capacitor. Compelling experimental evidence is presented to support the critical role of IL and its SBD. A multi-domain FE wake-up model is developed that incorporates defect generation, trap-assisted tunneling within the IL, and charge screening at the IL/HZO interface. Remarkably, this model accurately reproduces the trend of thickness-dependent wake-up behavior, emphasizing the utmost significance of IL optimization in ultrathin HZO.

Original language	English
Title of host publication	2023 International Electron Devices Meeting, IEDM 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350327670
DOIs	https://doi.org/10.1109/IEDM45741.2023.10413877
State	Published - 2023
Event	2023 International Electron Devices Meeting, IEDM 2023 - San Francisco, United States Duration: 9 Dec 2023 → 13 Dec 2023

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2023 International Electron Devices Meeting, IEDM 2023
Country/Territory	United States
City	San Francisco
Period	9/12/23 → 13/12/23

Access to Document

10.1109/IEDM45741.2023.10413877

Cite this

Cho, C. Y., Chao, T. Y., Lin, T. Y., Wang, I. T., Chen, Y. S., Ong, Y. C., Lin, Y. D., Yeh, P. C., Sheu, S. S., & Hou, T. H. (2023). Wake-Up of Ultrathin Ferroelectric Hf_0.5Zr_0.5O₂: The Origin and Physical Modeling. In 2023 International Electron Devices Meeting, IEDM 2023 (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM45741.2023.10413877

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title = "Wake-Up of Ultrathin Ferroelectric Hf0.5Zr0.5O2: The Origin and Physical Modeling",

abstract = "The wake-up procedure that demands prolonged time and a high electric field poses a significant obstacle to the aggressive scaling of the ferroelectric (FE) Hf0.5Zr0.5O2 (HZO) thickness. A comprehensive understanding of its origin is thus imperative. A new mechanism, referred to as interfacial-layer soft breakdown (IL-SBD), is proposed to elucidate the wakeup behavior in the ultrathin HZO capacitor. Compelling experimental evidence is presented to support the critical role of IL and its SBD. A multi-domain FE wake-up model is developed that incorporates defect generation, trap-assisted tunneling within the IL, and charge screening at the IL/HZO interface. Remarkably, this model accurately reproduces the trend of thickness-dependent wake-up behavior, emphasizing the utmost significance of IL optimization in ultrathin HZO.",

author = "Cho, {Chen Yi} and Chao, {Tzu Yi} and Lin, {Tzu Yao} and Wang, {I. Ting} and Chen, {Yu Sheng} and Ong, {Yi Ching} and Lin, {Yu De} and Yeh, {Po Chun} and Sheu, {Shyh Shyuan} and Hou, {Tuo Hung}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 International Electron Devices Meeting, IEDM 2023 ; Conference date: 09-12-2023 Through 13-12-2023",

year = "2023",

doi = "10.1109/IEDM45741.2023.10413877",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2023 International Electron Devices Meeting, IEDM 2023",

address = "美國",

}

Cho, CY, Chao, TY, Lin, TY, Wang, IT, Chen, YS, Ong, YC, Lin, YD, Yeh, PC, Sheu, SS & Hou, TH 2023, Wake-Up of Ultrathin Ferroelectric Hf_0.5Zr_0.5O₂: The Origin and Physical Modeling. in 2023 International Electron Devices Meeting, IEDM 2023. Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., 2023 International Electron Devices Meeting, IEDM 2023, San Francisco, United States, 9/12/23. https://doi.org/10.1109/IEDM45741.2023.10413877

Wake-Up of Ultrathin Ferroelectric Hf_0.5Zr_0.5O₂: The Origin and Physical Modeling. / Cho, Chen Yi; Chao, Tzu Yi; Lin, Tzu Yao et al.
2023 International Electron Devices Meeting, IEDM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Cho, Chen Yi

AU - Chao, Tzu Yi

AU - Lin, Tzu Yao

AU - Wang, I. Ting

AU - Chen, Yu Sheng

AU - Ong, Yi Ching

AU - Lin, Yu De

AU - Yeh, Po Chun

AU - Sheu, Shyh Shyuan

AU - Hou, Tuo Hung

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N2 - The wake-up procedure that demands prolonged time and a high electric field poses a significant obstacle to the aggressive scaling of the ferroelectric (FE) Hf0.5Zr0.5O2 (HZO) thickness. A comprehensive understanding of its origin is thus imperative. A new mechanism, referred to as interfacial-layer soft breakdown (IL-SBD), is proposed to elucidate the wakeup behavior in the ultrathin HZO capacitor. Compelling experimental evidence is presented to support the critical role of IL and its SBD. A multi-domain FE wake-up model is developed that incorporates defect generation, trap-assisted tunneling within the IL, and charge screening at the IL/HZO interface. Remarkably, this model accurately reproduces the trend of thickness-dependent wake-up behavior, emphasizing the utmost significance of IL optimization in ultrathin HZO.

AB - The wake-up procedure that demands prolonged time and a high electric field poses a significant obstacle to the aggressive scaling of the ferroelectric (FE) Hf0.5Zr0.5O2 (HZO) thickness. A comprehensive understanding of its origin is thus imperative. A new mechanism, referred to as interfacial-layer soft breakdown (IL-SBD), is proposed to elucidate the wakeup behavior in the ultrathin HZO capacitor. Compelling experimental evidence is presented to support the critical role of IL and its SBD. A multi-domain FE wake-up model is developed that incorporates defect generation, trap-assisted tunneling within the IL, and charge screening at the IL/HZO interface. Remarkably, this model accurately reproduces the trend of thickness-dependent wake-up behavior, emphasizing the utmost significance of IL optimization in ultrathin HZO.

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